Abstract: Provided are a cognitive radio (CR) cooperative spectrum sensing method and a fusion center (FC) performing CR cooperative spectrum sensing. The CR cooperative spectrum sensing method includes receiving, at an FC, local spectrum sensing information about a predetermined frequency band from each of N secondary users (SUs) in a predetermined zone, determining, at the FC, the optimum number of SUs for determining whether the predetermined frequency band is being used by a primary user (PU) on the basis of the received local spectrum sensing information, and performing cooperative spectrum sensing on the basis of local spectrum sensing information received from the optimum number of SUs in the predetermined zone. The method is implemented by the FC. Accordingly, the method and FC find how many SUs are needed to determine that a frequency of a PU is being used in a corresponding-channel situation, thereby enabling efficient communication.

Abstract: Disclosed is a method for preparation of a nickel-carbonitride sphere, which includes preparing a melamine-formaldehyde resin, adding a nickel salt and a surfactant to the melamine-formaldehyde resin to prepare a nickel-melamine resin mixture, and conducting spray pyrolysis for the mixture to produce nickel-containing powder including nickel-carbonitride spheres. In addition, this method may further include thermal treatment of the nickel-containing powder.

Abstract: An apparatus and method for transmitting in a multi-user multi-antenna system are provided. The apparatus includes a precoder for orthogonalizing a channel by removing a channel element of a corresponding terminal with respect to multiple terminals, for determining an effective channel of each terminal by decomposing the orthogonalized channel using Singular Value Decomposition (SVD), for determining a precoding matrix using the effective channel, and for mapping data streams of the multiple terminals to a plurality of transmit antennas using the precoding matrix, and the plurality of the transmit antennas for transmitting the data streams of the multiple terminals. Hence, it is possible to obtain an iteration algorithm performance requiring considerable computation while avoiding complexity and reducing computation.

Abstract: Provided are an apparatus for estimating a phase error and a phase error correcting system using the phase error estimating apparatus. The apparatus includes: a probability value estimating unit for estimating a negative log probability value for each transmission symbol by transforming a soft output information transferred from the outside to a log A posterior probability ratio (LAPPR) value; an APP value calculating unit for calculating a posterior probability (APP) value by applying a negative exponential function to the transmission symbol; an average value deciding unit for deciding an average value for each transmission symbol using the probability information entirely, partially, or selectively according to a probability information type; and a symbol phase estimating unit for estimating a phase of a symbol based on the decided average value.

Abstract: A cooperative transmission method includes: a first operation of coding, by a source node, a message desired to be transmitted according to a first encoding scheme to generate a first codeword and transmitting the first codeword to a relay node and a destination node; a second operation of decoding, by the relay node, the first codeword which has been received from the source node, coding the decoded message according to a second coding scheme to generate a second codeword, coding a part corresponding to parity of the second codeword according to the first coding scheme to generate a third codeword, and transmitting the third codeword to the destination node; and a third operation of decoding, by the destination node, the first codeword which has been received from the source node and the third codeword which has been received from the relay node, combining the message generated by decoding the first codeword and the parity part of the second codeword generated by decoding the third codeword to generate a fou

Abstract: The present invention relates to a decoding method for a raptor codes using system, which is capable of improving performance of the system and limiting increase in the amount of computation by grouping variable nodes if raptor codes are unsuccessfully decoded, to thereby increase a conjecture efficiency of variable node values. The decoding method is capable of improving performance of the system by making it possible to achieve performance improvement and additional reduction of the amount of computation even under an application of MP decoding by grouping variable nodes whose values cannot be known when decoded, dividing groups of variable nodes into sub groups, and conjecturing and recovering the variable nodes in a manner to exclude sub groups which do not satisfy check node equation.

Abstract: Disclosed is a method for preparation of a nickel-carbonitride sphere, which includes preparing a melamine-formaldehyde resin, adding a nickel salt and a surfactant to the melamine-formaldehyde resin to prepare a nickel-melamine resin mixture, and conducting spray pyrolysis for the mixture to produce nickel-containing powder including nickel-carbonitride spheres. In addition, this method may further include thermal treatment of the nickel-containing powder.

Abstract: An organic light-emitting diode (OLED) display including a substrate, an OLED, a driver IC electrically connected to the OLED, and a sealing substrate having inner and outer surfaces, wherein the sealing substrate is affixed to the substrate such that both the driver IC and the OLED are enclosed between the inner surface of the sealing substrate and the substrate.

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: Provided is an antenna for a Radio Frequency Identification (RFID) reader using an electrical loop. It includes an upper metal plate which functions as a radiator; a lower metal plate which is disposed apart from the upper metal plate by a predetermined distance and functions as a radiator; a ground plate disposed apart from the lower metal plate by a predetermined distance; and a feeding probe disposed at the center of the upper and lower metal plates. The antenna can perform radiation parallel to the earth's surface including other directions. Therefore, it is suitable for an RFID reader which recognizes an RFID tag attached in parallel to the earth's surface. The electrical loop antenna can control impedance matching, resonance frequency, antenna gain, and radiation pattern according to the distance between metal plates, size of the metal plates, thickness of a feeding probe, and how the metal plates are arranged.

Abstract: Disclosed is a method for detecting a symbol using a trellis structure on a multiple input multiple output (MIMO) mobile communication system. The method includes the steps of: setting a plurality of states by grouping symbols producible from a receiving signal in the unit of sub-states; calculating metric values for paths inputted to the sub-states and selecting paths having the calculated metric values smaller than a preset first threshold, as first surviving paths; setting a second threshold based on an accumulated metric value of a path having the smallest accumulated metric in each of the states; and selecting paths having metric value smaller than the second threshold, as second surviving paths, among the first surviving paths selected for each state.

Abstract: Provided is an apparatus for estimating phase offsets of multiple survival paths and a satellite communication system using the same. The apparatus includes: upper/lower decoding units for obtaining a phase offset estimation value and estimating phase offsets of each survival path based on a stored parameter estimation value of a previous state inputted from an external device; an interleaving/de-interleaving unit for minimizing correlation between data used to estimate a parameter according to the estimated phase offset value from the upper/lower decoding means; and a phase offset outputting unit for outputting the phase offset value estimated through the upper decoding unit and the de-interleaving unit.

Abstract: A method of fabricating a semiconductor device that includes dual spacers is provided. A nitrogen atmosphere may be created and maintained in a reaction chamber by supplying a nitrogen source gas. A silicon source gas and an oxygen source gas may then be supplied to the reaction chamber to deposit a silicon oxide layer on a semiconductor substrate, which may include a conductive material layer. A silicon nitride layer may then be formed on the silicon oxide layer by performing a general CVD process. Next, the silicon nitride layer may be etched until the silicon oxide layer is exposed. Because of the difference in etching selectivity between silicon nitride and silicon oxide, portions of the silicon nitride layer may remain on sidewalls of the conductive material layer. As a result, dual spacers formed of a silicon oxide layer and a silicon nitride layer may be formed on the sidewalls.

Abstract: Provided are an apparatus for estimating a phase error and a phase error correcting system using the phase error estimating apparatus. The apparatus includes: a probability value estimating unit for estimating a negative log probability value for each transmission symbol by transforming a soft output information transferred from the outside to a log A posterior probability ratio (LAPPR) value; an APP value calculating unit for calculating a posterior probability (APP) value by applying a negative exponential function to the transmission symbol; an average value deciding unit for deciding an average value for each transmission symbol using the probability information entirely, partially, or selectively according to a probability information type; and a symbol phase estimating unit for estimating a phase of a symbol based on the decided average value.

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: An electroluminescent display (EL) device and a method of manufacturing the same. The EL device includes a substrate, a first electrode unit including first electrodes formed on the substrate in a predetermined pattern, and first electrode terminals connected to the respective first electrodes; a second electrode unit including second electrodes formed on the first electrodes, and second electrode terminals connected to the respective second electrodes; an emission area formed where the first electrodes intersect the second electrodes, an electroluminescent layer disposed between the first electrodes and the second electrodes in the emission area, and an outer insulating layer between the emission area and the second electrode terminals; wherein the outer insulating layer comprises an insulating material formed to contact at least an edge of the second electrode terminals facing the emission area to reduce a steepness of a step between the second electrode terminal and the substrate.

Abstract: Provided is an antenna for a Radio Frequency Identification (RFID) reader using an electrical loop. It includes an upper metal plate which functions as a radiator; a lower metal plate which is disposed apart from the upper metal plate by a predetermined distance and functions as a radiator; a ground plate disposed apart from the lower metal plate by a predetermined distance; and a feeding probe disposed at the center of the upper and lower metal plates. The antenna can perform radiation parallel to the earth's surface including other directions. Therefore, it is suitable for an RFID reader which recognizes an RFID tag attached in parallel to the earth's surface. The electrical loop antenna can control impedance matching, resonance frequency, antenna gain, and radiation pattern according to the distance between metal plates, size of the metal plates, thickness of a feeding probe, and how the metal plates are arranged.

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).