Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: Provided is an antenna for a Radio Frequency Identification (RFID) reader using an electrical loop. It includes an upper metal plate which functions as a radiator; a lower metal plate which is disposed apart from the upper metal plate by a predetermined distance and functions as a radiator; a ground plate disposed apart from the lower metal plate by a predetermined distance; and a feeding probe disposed at the center of the upper and lower metal plates. The antenna can perform radiation parallel to the earth's surface including other directions. Therefore, it is suitable for an RFID reader which recognizes an RFID tag attached in parallel to the earth's surface. The electrical loop antenna can control impedance matching, resonance frequency, antenna gain, and radiation pattern according to the distance between metal plates, size of the metal plates, thickness of a feeding probe, and how the metal plates are arranged.

Abstract: Disclosed is a method for detecting a symbol using a trellis structure on a multiple input multiple output (MIMO) mobile communication system. The method includes the steps of: setting a plurality of states by grouping symbols producible from a receiving signal in the unit of sub-states; calculating metric values for paths inputted to the sub-states and selecting paths having the calculated metric values smaller than a preset first threshold, as first surviving paths; setting a second threshold based on an accumulated metric value of a path having the smallest accumulated metric in each of the states; and selecting paths having metric value smaller than the second threshold, as second surviving paths, among the first surviving paths selected for each state.

Abstract: Provided is an apparatus for estimating phase offsets of multiple survival paths and a satellite communication system using the same. The apparatus includes: upper/lower decoding units for obtaining a phase offset estimation value and estimating phase offsets of each survival path based on a stored parameter estimation value of a previous state inputted from an external device; an interleaving/de-interleaving unit for minimizing correlation between data used to estimate a parameter according to the estimated phase offset value from the upper/lower decoding means; and a phase offset outputting unit for outputting the phase offset value estimated through the upper decoding unit and the de-interleaving unit.

Abstract: A method of fabricating a semiconductor device that includes dual spacers is provided. A nitrogen atmosphere may be created and maintained in a reaction chamber by supplying a nitrogen source gas. A silicon source gas and an oxygen source gas may then be supplied to the reaction chamber to deposit a silicon oxide layer on a semiconductor substrate, which may include a conductive material layer. A silicon nitride layer may then be formed on the silicon oxide layer by performing a general CVD process. Next, the silicon nitride layer may be etched until the silicon oxide layer is exposed. Because of the difference in etching selectivity between silicon nitride and silicon oxide, portions of the silicon nitride layer may remain on sidewalls of the conductive material layer. As a result, dual spacers formed of a silicon oxide layer and a silicon nitride layer may be formed on the sidewalls.

Abstract: Provided are an apparatus for estimating a phase error and a phase error correcting system using the phase error estimating apparatus. The apparatus includes: a probability value estimating unit for estimating a negative log probability value for each transmission symbol by transforming a soft output information transferred from the outside to a log A posterior probability ratio (LAPPR) value; an APP value calculating unit for calculating a posterior probability (APP) value by applying a negative exponential function to the transmission symbol; an average value deciding unit for deciding an average value for each transmission symbol using the probability information entirely, partially, or selectively according to a probability information type; and a symbol phase estimating unit for estimating a phase of a symbol based on the decided average value.

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: An electroluminescent display (EL) device and a method of manufacturing the same. The EL device includes a substrate, a first electrode unit including first electrodes formed on the substrate in a predetermined pattern, and first electrode terminals connected to the respective first electrodes; a second electrode unit including second electrodes formed on the first electrodes, and second electrode terminals connected to the respective second electrodes; an emission area formed where the first electrodes intersect the second electrodes, an electroluminescent layer disposed between the first electrodes and the second electrodes in the emission area, and an outer insulating layer between the emission area and the second electrode terminals; wherein the outer insulating layer comprises an insulating material formed to contact at least an edge of the second electrode terminals facing the emission area to reduce a steepness of a step between the second electrode terminal and the substrate.

Abstract: Provided is an antenna for a Radio Frequency Identification (RFID) reader using an electrical loop. It includes an upper metal plate which functions as a radiator; a lower metal plate which is disposed apart from the upper metal plate by a predetermined distance and functions as a radiator; a ground plate disposed apart from the lower metal plate by a predetermined distance; and a feeding probe disposed at the center of the upper and lower metal plates. The antenna can perform radiation parallel to the earth's surface including other directions. Therefore, it is suitable for an RFID reader which recognizes an RFID tag attached in parallel to the earth's surface. The electrical loop antenna can control impedance matching, resonance frequency, antenna gain, and radiation pattern according to the distance between metal plates, size of the metal plates, thickness of a feeding probe, and how the metal plates are arranged.

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).

Abstract: Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.

Abstract: Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.

Abstract: A method of fabricating a semiconductor device that includes dual spacers is provided. A nitrogen atmosphere may be created and maintained in a reaction chamber by supplying a nitrogen source gas. A silicon source gas and an oxygen source gas may then be supplied to the reaction chamber to deposit a silicon oxide layer on a semiconductor substrate, which may include a conductive material layer. A silicon nitride layer may then be formed on the silicon oxide layer by performing a general CVD process. Next, the silicon nitride layer may be etched until the silicon oxide layer is exposed. Because of the difference in etching selectivity between silicon nitride and silicon oxide, portions of the silicon nitride layer may remain on sidewalls of the conductive material layer. As a result, dual spacers formed of a silicon oxide layer and a silicon nitride layer may be formed on the sidewalls.

Abstract: A method of fabricating a semiconductor device that includes dual spacers is provided. A nitrogen atmosphere may be created and maintained in a reaction chamber by supplying a nitrogen source gas. A silicon source gas and an oxygen source gas may then be supplied to the reaction chamber to deposit a silicon oxide layer on a semiconductor substrate, which may include a conductive material layer. A silicon nitride layer may then be formed on the silicon oxide layer by performing a general CVD process. Next, the silicon nitride layer may be etched until the silicon oxide layer is exposed. Because of the difference in etching selectivity between silicon nitride and silicon oxide, portions of the silicon nitride layer may remain on sidewalls of the conductive material layer. As a result, dual spacers formed of a silicon oxide layer and a silicon nitride layer may be formed on the sidewalls.

Abstract: In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.

Abstract: A method of avoiding collisions in a mobile communication system having an access network and at least one access terminal. The method includes receiving, from the at least one access terminal, a service connection request message including an access terminal identifier and a time identifier, and comparing a time information of the received time identifier to a reset time of the at least one access network. Further, if the time information precedes the reset time as a result of the comparison, the method includes broadcasting a session close message including the access terminal identifier and the time identifier to the at least one access terminal.