Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.

Abstract: Disclosed herein is a current sensor that includes a bus bar and a magnetic sensor. The bus bar includes first and second cylindrical structure parts which are coaxially arranged, and a sensing part disposed in a hollow area surrounded by the first and second cylindrical structure parts. The magnetic sensor is disposed in the hollow area. The bus bar is configured to branch current to be measured into the first cylindrical structure part and sensing part and to make at least part of a current component of the current to be measured that flows in the first cylindrical structure part in one direction flow in the second cylindrical structure part in an opposite direction to the one direction.

Abstract: A power supply apparatus includes a transformer including primary and secondary coils, a heatsink that radiates heat, and a substrate supporting the heatsink and including primary and secondary circuits. The transformer outputs a voltage to the secondary coil according to a voltage input to the primary coil. The heatsink includes a protruding portion protruding from a position where the heatsink is in contact with the substrate in a direction protruding from a surface of the substrate. The heatsink further includes an extending portion extending from part of the protruding portion to an area of the secondary circuit of the transformer, in a state spaced apart from the substrate. The extending portion enters the area of the secondary circuit when viewed in a direction perpendicular to the surface of the substrate. A distance between the extending portion and the surface of the substrate is longer than at least 1 millimeter (mm).

Abstract: A power supply apparatus includes a transformer, an electrolytic capacitor provided in primary circuitry of the transformer, a board, and a heat sink having a protruding portion and a cover portion. The electrolytic capacitor includes an explosion-proof valve that opens to cause an electrolytic solution to be jetted from the electrolytic capacitor. The electrolytic capacitor is placed on the board so that a surface of the electrolytic capacitor opposite to a surface on which the explosion-proof valve is provided faces the board. The cover portion has a hole formed in the cover portion and, when the cover portion is viewed in a direction vertical to the surface of the electrolytic capacitor on which the explosion-proof valve is provided, at least the explosion-proof valve and the hole formed in the cover portion do not overlap each other and the cover portion encompasses the explosion-proof valve.

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.

Abstract: A semiconductor device includes a semiconductor layer including first and second electrode forming surfaces and side surface, an anode electrode formed on the first electrode forming surface, a cathode electrode formed on the second electrode forming surface; an insulating film continuously formed from the first electrode forming surface to the side surface so as to cover the first edge. The side surface of the semiconductor layer is covered with the insulating film, so that a leak current flowing along the side surface is reduced. Further, the side surface is protected by the insulating film, making cracking, chipping, cleavage, and the like less likely to occur.

Abstract: As a technique for specifically detecting cancer cells, provided is a method for detecting cancer cells, including the steps of: bringing BC2LCN lectin into contact with a test sample; and determining the presence or absence or the amount of a sugar chain having a BC2LCN lectin binding activity in the test sample, in which the test sample is a body fluid sample of a test individual.

Abstract: Disclosed herein is a current sensor that includes a bus bar and a magnetic sensor. The bus bar includes first and second cylindrical structure parts which are coaxially arranged, and a sensing part disposed in a hollow area surrounded by the first and second cylindrical structure parts. The magnetic sensor is disposed in the hollow area. The bus bar is configured to branch current to be measured into the first cylindrical structure part and sensing part and to make at least part of a current component of the current to be measured that flows in the first cylindrical structure part in one direction flow in the second cylindrical structure part in an opposite direction to the one direction.

Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

Abstract: The electronic apparatus includes a first circuit board on which a circuit mounted, a second circuit board arranged close to the circuit on the first circuit board, and a conductive terminal, which is in contact with a ground pattern on the first circuit board, and is arranged at a location between the circuit and the second circuit board so as to extend over the circuit.

Abstract: The switching circuit includes a first capacitor to which a pulse signal output from a control unit is input, a rectification circuit including at least a first diode and a second diode, the rectification circuit rectifying a voltage input from the first capacitor, and generating a first voltage, and a first switching element including a first terminal, a second terminal and a third terminal, the first voltage generated by the rectification circuit being applied between the first terminal and the second terminal.

Abstract: The power supply apparatus includes a switching element configured to drive a transformer, a primary side and a secondary side of the transformer being insulated from each other, a control unit configured to output a pulse signal for driving the switching element, and a comparing unit configured to compare a target voltage of an output voltage that is output from the secondary side of the transformer and the output voltage, and to control the output voltage to be the target voltage, wherein the comparing unit cuts off an input of the pulse signal to the switching element in a case where the output voltage is larger than the target voltage, and wherein the control unit determines a frequency or an on-duty ratio of the pulse signal according to the target voltage.

Abstract: An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20.

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

Abstract: The power supply apparatus includes an inductor; a switching element connected to another end of the inductor, the switching element configured to drive the inductor by being turned on or turned off in accordance with an input pulse signal; a boost converter circuit connected to both ends of the inductor and including a plurality of rectification units, the boost converter circuit configured to amplify a voltage generated in the inductor, each of the plurality of rectification units including a diode and a capacitor; and a voltage boosting element configured to supply a voltage obtained by boosting an input voltage to the inductor.