Abstract: A strain sensor may have a conductive elastic yarn including a first fiber having a predetermined length and a shape of a fiber yarn and a second fiber having electrical conductivity and a sheet shape. The strain sensor may have a pair of wiring members electrically connected to both ends of the conductive elastic yarn. The conductive elastic yarn, with the second fiber wrapped around the first fiber, is twisted in a coil shape.

Abstract: A blender includes a container body in which food is accommodated, a main body to support the container body, and an air guide provided in the main body to guide discharging of air flowing through a motor assembly to below the main body.

Abstract: Disclosed is a headrest device for a vehicle. The headrest device may include a stationary headrest portion coupled to a seatback of the vehicle and formed to extend upwards. The stationary headrest portion may be located at a rear of a head of an occupant. The headrest device may include a movable headrest portion coupled to the stationary headrest portion so as to be slidable in a vertical direction, the movable headrest portion may be located in front of the stationary headrest portion. The headrest device may include an actuator including a first side coupled to the fixed part, and a second side coupled to the movable headrest portion. The actuator may be configured to cause the movable headrest portion to slide in the vertical direction.

Abstract: A motor drive device includes: a first inverter including a plurality of first switching elements and connected to a plurality of coils; a second inverter including a plurality of second switching elements and connected to the plurality of coils; a plurality of transfer switching elements connected to the second ends; a capacitor disposed at one side of a casing of a motor; first and second cooling channels disposed at both sides of the capacitor; a plurality of first power modules including some of the plurality of first switching elements and some of the transfer switching elements; and a plurality of second power modules including some of the plurality of second switching elements.

Abstract: In some implementations, the anode includes a current collector, a first anode mixture layer formed on at least one surface of the current collector, and a second anode mixture layer formed on the first anode mixture layer. The first anode mixture layer and the second anode mixture layer include a carbon-based active material, respectively. The first anode mixture layer includes a first binder, a first silicon-based active material, and a first conductive material. The second anode mixture layer includes a second binder, a second silicon-based active material, and a second conductive material. Contents of the first conductive material and the second conductive material are different from each other with respect to the total combined weight of the first anode mixture layer and the second anode mixture layer. Types of the first silicon-based active material and the second silicon-based active material are different from each other.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: In a wave focusing device and a wave emitting device having the wave focusing device, the wave focusing device has a plurality of filters and focuses a wave by a phase overlap. The plurality of filters includes a first filter formed on a substrate, a second filter formed on the substrate and overlapping with the first filter in a first area, and a third filter formed on the substrate and overlapping with the second filter in a second area. A size of the first area is substantially same as that of the second area. A first portion of the second filter in the first area is inverted to a second portion of the second filter in the second area, with respect to a first axis. A wave passing through the wave focusing device is focused at a center of each of the first, second and third filters.

Abstract: An embodiment of the present invention provides an ultrasonic wave amplifying unit which can improve ultrasonic power in air, wherein the ultrasonic wave amplifying unit includes multiple rings having a concentric axis and each having a first width, and a slit having a second width is formed between the rings and an air layer is formed between the multiple rings and an ultrasonic wave generator generating ultrasonic waves or a transfer medium transferring the ultrasonic waves.

Abstract: A method for manufacturing a microstructure-based drug injection device according to an embodiment of the present invention includes: a forming mold preparation step for preparing a forming mold formed in a shape corresponding to a microstructure to be manufactured; a biodegradable material-mixed solution application step for applying a biodegradable material-mixed solution to the forming mold; a primary drying step for drying the biodegradable material-mixed solution applied to the forming mold and forming a needle film in which the microstructure is formed; a drug filling step for filling a drug into a filling space formed by the microstructure; and a secondary drying step for drying the needle film, wherein, in the filling space that has undergone the secondary drying step, an inner space portion is formed in a region other than in the region in which the drug is accommodated.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: An embodiment of the present invention provides an ultrasonic wave amplifying unit which can improve ultrasonic power in air, wherein the ultrasonic wave amplifying unit includes multiple rings having a concentric axis and each having a first width, and a slit having a second width is formed between the rings and an air layer is formed between the multiple rings and an ultrasonic wave generator generating ultrasonic waves or a transfer medium transferring the ultrasonic waves.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A method for manufacturing a three-dimensional structure through nano-imprinting, includes: a stamp preparation step in which a stamp formed with a convex-concave portion corresponding to a pattern of functional layers to be formed is prepared; a material formation step in which at least one material for forming the functional layers is formed to a thickness of several to dozens of nanometers on the convex-concave portion; a material stacking step in which the material formed on the convex-concave portion is stacked on a substrate; and a functional layer securing step in which the material is cured by applying pressure, heat and pressure, or light and pressure thereto such that the material can be converted into the functional layers.

Abstract: Semiconductor devices may include a first memory cell on a substrate and a second memory cell on the substrate and adjacent to the first memory cell. The first memory cell may include a first reference layer, a first storage layer, a first tunnel layer between the first reference layer and the first storage layer, and a first spin-orbit torque (SOT) line in contact with the first storage layer. The second memory cell may include a second reference layer, a second storage layer, a second tunnel layer between the second reference layer and the second storage layer, a second SOT line adjacent to the second storage layer, and an enhancing layer between the second storage layer and the second SOT line.

Abstract: A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.