Abstract: A flexible display device includes a folding section formed on a flexible substrate, a flat section connected to the folding section, and a display area for displaying an image, wherein the display area is formed on the folding section and the flat section, wherein each of the display areas of the folding section and the flat section includes a plurality of pixels and a plurality of wires for supplying electrical signals to the pixels, and wherein the wires in the display area of the folding section include a winding wire extending in a winding configuration on the flexible substrate.

Abstract: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display structure including nanoparticles, and a second display structure at the second display region of the flexible substrate, the second display structure including silicon.

Abstract: A flexible display device includes a folding section formed on a flexible substrate, a flat section connected to the folding section, and a display area for displaying an image, wherein the display area is formed on the folding section and the flat section, wherein each of the display areas of the folding section and the flat section includes a plurality of pixels and a plurality of wires for supplying electrical signals to the pixels, and wherein the wires in the display area of the folding section include a winding wire extending in a winding configuration on the flexible substrate.

Abstract: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display structure including nanoparticles, and a second display structure at the second display region of the flexible substrate, the second display structure including silicon.

Abstract: A thin film transistor may include a substrate, an oxide semiconductor layer on the substrate, a first insulating layer on the oxide semiconductor layer, a gate electrode on the first insulating layer, a second insulating layer on the gate electrode, and a source electrode and a drain electrode on the second insulating layer and facing each other. Each of the source electrode and the drain electrode may be connected with the oxide semiconductor layer through a contact hole in the second insulating layer. The oxide semiconductor layer may include a polycrystalline semiconductor.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode on the substrate; and a thin film encapsulation layer including a first inorganic layer having a first density on the substrate and a second inorganic layer having a second density on the first inorganic layer, the second density being different from the first density, and the organic light emitting diode being encapsulated between the thin film encapsulation layer and the substrate.

Abstract: A display device includes: a display having a plurality of display regions on a body that are configured to display images; a touch sensor configured to sense a first touch input; and a controller configured to control the images displayed on the plurality of display regions in response to the first touch input sensed by the touch sensor, wherein the controller is further configured to control the display to display at least one piece of content at at least one of the plurality of display regions, and to move the at least one piece of content to a first display region from among the plurality of display regions and to display the moved content at the first display region in response to the first touch input when the touch sensor senses the first touch input generated at the first display region.

Abstract: A method of fabricating an organic light-emitting display includes forming an organic light-emitting device (OLED) on a substrate, forming a first encapsulation layer, which has a first thin-film density and contains a first inorganic material, on the substrate, and forming a second encapsulation layer, which has a second thin-film density higher than the first thin-film density and contains a second inorganic material, on the first encapsulation layer.

Abstract: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display structure including nanoparticles, and a second display structure at the second display region of the flexible substrate, the second display structure including silicon.

Abstract: In a flexible organic light-emitting display device and a method of manufacturing the same, a photolysis layer and an electrostaticity prevention layer are sequentially formed on a carrier substrate, a first flexible substrate is formed on the electrostaticity prevention layer, a display unit is formed on the first flexible substrate, the display unit is covered with the second flexible substrate, and light is irradiated so as to decompose the photolysis layer and to remove the carrier substrate. The formed flexible organic light-emitting display device may have improved flexibility because a flexible substrate is used instead of a typical strong and thick glass substrate. In addition, occurrence of electrostaticity during the separation of the carrier substrate is suppressed by the electrostaticity prevention layer, and thus, damage of the display unit due to electrical impacts is also reduced.

Abstract: An atomic layer deposition apparatus and a sealing method of an organic light emitting device using the same are disclosed. In one embodiment, the atomic layer deposition apparatus improves a structure of the purge gas injection nozzle so as to increase the exhaust efficiency of the purge gas in an atomic layer deposition process, which increases a speed of a purge process. As a result, it is possible to improve a deposition speed and a quality of a sealing film when a sealing process for sealing the organic light emitting device is implemented by using the atomic layer deposition.

Abstract: In a flexible organic light-emitting display device and a method of manufacturing the same, a photolysis layer and an electrostaticity prevention layer are sequentially formed on a carrier substrate, a first flexible substrate is formed on the electrostaticity prevention layer, a display unit is formed on the first flexible substrate, the display unit is covered with the second flexible substrate, and light is irradiated so as to decompose the photolysis layer and to remove the carrier substrate. The formed flexible organic light-emitting display device may have improved flexibility because a flexible substrate is used instead of a typical strong and thick glass substrate. In addition, occurrence of electrostaticity during the separation of the carrier substrate is suppressed by the electrostaticity prevention layer, and thus, damage of the display unit due to electrical impacts is also reduced.

Abstract: A flexible display apparatus and a method of manufacturing the same are disclosed. The flexible display apparatus includes a substrate; a light-emitting display unit formed on a first surface of the substrate; an encapsulation layer formed on the light-emitting display unit; and a conductive layer formed on a second surface of the substrate, the second surface of the substrate being opposite to the first surface of the substrate, wherein the conductive layer includes a conductor, and the conductor includes at least one selected from a carbon nanotube (CNT), fullerene, and a nanowire. Changes in characteristics of the light-emitting display unit due to static electricity are prevented in this configuration.

Abstract: An atomic layer deposition apparatus and a sealing method of an organic light emitting device using the same are disclosed. In one embodiment, the atomic layer deposition apparatus improves a structure of the purge gas injection nozzle so as to increase the exhaust efficiency of the purge gas in an atomic layer deposition process, which increases a speed of a purge process. As a result, it is possible to improve a deposition speed and a quality of a sealing film when a sealing process for sealing the organic light emitting device is implemented by using the atomic layer deposition.

Abstract: An inline deposition apparatus includes a chamber; a loading unit inside the chamber and loaded with an object to be processed to be moved in a first direction; a plurality of first deposition modules in the chamber for depositing a first layer to the object to be processed; and a plurality of second deposition modules in the chamber for depositing a second layer to the object to be processed, wherein at least one of the plurality of second deposition modules is positioned between neighboring first deposition modules, and wherein the first layer is different from the second layer.

Abstract: A method of fabricating an organic light-emitting display includes forming an organic light-emitting device (OLED) on a substrate, forming a first encapsulation layer, which has a first thin-film density and contains a first inorganic material, on the substrate, and forming a second encapsulation layer, which has a second thin-film density higher than the first thin-film density and contains a second inorganic material, on the first encapsulation layer.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode on the substrate; and a thin film encapsulation layer including a first inorganic layer having a first density on the substrate and a second inorganic layer having a second density on the first inorganic layer, the second density being different from the first density, and the organic light emitting diode being encapsulated between the thin film encapsulation layer and the substrate.

Abstract: Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 ? or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.

Abstract: Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.

Abstract: A polycrystalline silicon thin film having grains defined by grain boundaries is provided. The polycrystalline silicon thin film is formed by interposing a cover layer between an amorphous silicon layer and a metal layer to diffuse the metal into the amorphous silicon layer through the cover layer, removing the cover layer, crystallizing the amorphous silicon layer to be changed to a polycrystalline silicon layer, depositing a metal on the polycrystalline silicon layer, and annealing the polycrystalline silicon layer.