Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

Abstract: A coating liquid includes a polymer particle, an aggregating agent for a coloring material, a nonionic surfactant having an HLB value within the range of 15.5 to 20, and water.

Abstract: There is disclosed an electrochromic passive-matrix display, wherein each passively addressed pixel cell comprises an electrolyte ionically connecting an electrochromic and electrochemically active polymer and a layer of electrically conducting carbon. Thus, each pixel has a pronounced threshold voltage sufficient for reducing cross talk in an electrochromic display.

Abstract: A coating liquid includes a polymer particle, an aggregating agent for a coloring material, a nonionic surfactant having an HLB value within the range of 15.5 to 20, and water.

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other, and the substrate can be contacted with different reactants at different temperatures so as to minimize or prevent undesired gas phase reactions, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract: A process for manufacturing an electrochemically active device comprising the steps of: —providing a substrate (110) comprising an electrode receiving surface portion (111) having substantially constant wetting tension throughout said electrode receiving surface portion, —providing a plurality of first electrodes (120) directly on said electrode receiving surface portion, —leaving intermediate portions (130) of said electrode receiving surface portion (111) free from said electrodes, —providing a layer of electrolyte (140) covering said plurality of first electrodes (120) and said intermediate portions (130), and—wherein wetting tension of the surfaces of the intermediate portions (130) is arranged to act more repelling on the electrolyte compared to the wetting tension of the surfaces of the plurality of first electrodes (120), whereby, the electrolyte is concentrated to the surfaces of the plurality of first electrodes (120), and the surfaces of the intermediate portions (130) are substantially free of elec

Abstract: An ink includes a radiation-curable compound, a liquid matter which is incompatible with the radiation-curable compound and is dispersed in a state of droplets, and a surfactant.

Abstract: A three-dimension forming support material includes a photocurable compound that contains an urethane (meth)acrylate and a non-photocurable polymer having a hydroxyl value of 60 mgKOH/g to 300 mgKOH/g.

Abstract: Provided is a semiconductor memory device (resistance random access memory element) improved in properties. A Ru film is formed as a film of a lower electrode by sputtering, and a Ta film is formed thereonto by sputtering. Next, the Ta film is oxidized with plasma to oxidize the Ta film. In this way, a compound Ta2O5 is produced and further Ru is diffused into the compound to form a layer (variable resistance layer) in which Ru is diffused into the compound Ta2O5. Such an incorporation of a metal (such as Ru) into a transition metal oxide TMO (such as Ta2O5) makes it possible to form electron conductive paths additional to filaments to lower the filaments in density and thickness. Thus, the memory element can be restrained from undergoing OFF-fixation, by which the element is not easily lowered in resistance, to be improved in ON-properties.

Abstract: There is provided a display device, which is arranged to display a predetermined fixed image, having a pixel electrode layer comprising a plurality of pixel portions, and opaque solidified electrolyte arranged in a plurality of separated segments in ionic contact with a respective pixel portion, wherein each electrolyte segment and respective pixel portion form a pixel element. The fixed image display further comprises at least one continuous electrode layer extending across at least two rows and two columns of the pixel matrix, and is connected to the electrolyte segments of a subset of the pixel elements. Upon application of an electric potential difference between the patterned electrode layer and the pixel electrode layer, the pixel portions of the subset of the pixel elements switch color.

Abstract: White particles for display, include inorganic white particles, and a covering layer that covers the inorganic white particles and includes a polymer obtained by polymerizing at least olefin as a constituent.

Abstract: A semiconductor device containing a novel cyclosiloxane polymer showing electroconductivity or semiconductivity has a charge transport layer comprising a plasma polymer containing structural units (A) each having a transition metal as a central metal and structural units (B) each situated between structural units (A) adjacent to each other and having a cyclosiloxane skeleton. The charge transport layer is formed by plasma polymerization of an organic metal compound having the transition metal as the central metal and the cyclosiloxane compound in a reactor.

Abstract: Particles for display include a copolymer that contains at least, as copolymer constituents, a reactive compound containing a silicone chain or an alkyl chain and a vinyl compound represented by Formula (1), wherein a content of the reactive compound containing a silicone chain or an alkyl chain is 3.0% by weight or less with respect to the weight of the particles: ArH2C?CH2)n??Formula (1) wherein in Formula (1), Ar represents an unsubstituted aromatic ring or an aromatic ring that is substituted with an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and n represents an integer from 1 to 4.

Abstract: A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer.

Abstract: A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer.

Abstract: Particles for display include a copolymer that contains at least, as copolymer constituents, a reactive compound containing a silicone chain or an alkyl chain and a vinyl compound represented by Formula (1), wherein a content of the reactive compound containing a silicone chain or an alkyl chain is 3.0% by weight or less with respect to the weight of the particles: Ar?H2C?CH2)n??Formula (1) wherein in Formula (1), Ar represents an unsubstituted aromatic ring or an aromatic ring that is substituted with an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and n represents an integer from 1 to 4.

Abstract: The present invention provides a method for manufacturing silver triangular pyramid particles including: forming an electric field in an electrolytic solution including silver ions and a surfactant to reduce the silver ions into silver triangular pyramid particles.

Abstract: A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.