Abstract: A deodorizing catalyst containing a composite oxide and a metal component containing Pt supported on the composite oxide, and having a degree of reduction represented by the following formula (1) in a range of 60% to 86%: degree of reduction (%)=100?[X/Y]×100 (1), in which X represents a peak area obtained from a thermal conductivity detector (TCD) when the catalyst is dried and reduced by heating from 40° C. to 400° C., and Y represents a peak area obtained from the TCD when an oxidation catalyst obtained by heat-treating the catalyst in an air or under oxygen atmosphere at 150° C. for 2 hours and then cooling the catalyst to 40° C. or lower is reduced by heating from 40° C. to 400° C.

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatments process.

Abstract: A porous formed body (Y) including a porous formed body (X) that satisfies the following (x-1) to (x-3), and an alkali metal carbonate or an alkali metal bicarbonate, in which a content of the alkali metal carbonate or the alkali metal bicarbonate is in a range of from 1 part by mass to 230 parts by mass, with respect to 100 parts by mass of the porous formed body (X), and a production method thereof, an ?-olefin dimerization catalyst and a production method thereof, and a method of producing an ?-olefin dimer: requirement (x-1): a volume of pores with a pore diameter in a range of from 0.01 ?m to 100 ?m is from 0.10 mL/g to 1.00 mL/g; requirement (x-2): a median pore diameter of pores with a pore diameter in a range of from 0.01 ?m to 100 ?m is from more than 0.01 ?m to 10.0 ?m; and requirement (x-3): a crushing strength is from 0.7 kgf to 15.0 kgf.

Abstract: An arithmetic processing device includes arithmetic processing units, each having a calculator unit; a scheduler that controls a push instruction to write data to a register file in one of the arithmetic processing units and a pull instruction to read data from the register file; a pull request bus to which the scheduler outputs a pull request and which is connected to the arithmetic processing units; a push request bus to which the scheduler outputs a push request and which is connected to the arithmetic processing units; and a pull data bus that inputs, into the scheduler, pull data read from the register file in response to the pull request. Each of the arithmetic processing units includes a pull data turn-back bus that propagates pull data read from its register file to the pull data bus.

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

Abstract: A porous formed body (Y) including a porous formed body (X) that satisfies the following (x-1) to (x-3), and an alkali metal carbonate or an alkali metal bicarbonate, in which a content of the alkali metal carbonate or the alkali metal bicarbonate is in a range of from 1 part by mass to 230 parts by mass, with respect to 100 parts by mass of the porous formed body (X), and a production method thereof, an ?-olefin dimerization catalyst and a production method thereof, and a method of producing an ?-olefin dimer: requirement (x-1): a volume of pores with a pore diameter in a range of from 0.01 ?m to 100 ?m is from 0.10 mL/g to 1.00 mL/g; requirement (x-2): a median pore diameter of pores with a pore diameter in a range of from 0.01 ?m to 100 ?m is from more than 0.01 ?m to 10.0 ?m; and requirement (x-3): a crushing strength is from 0.7 kgf to 15.0 kgf.

Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

Abstract: An actuator which is formed of a fibrous polymer material configured with a polymer, and includes a twist mark on an outermost surface of the fibrous polymer material, in which an angle x at which the twist mark is inclined with respect to a fiber axis of the fibrous polymer material, and an angle y at which the twist mark inclined with respect to a fiber axis of a fiber at the time of twisting the fiber configured with the polymer configuring the fibrous polymer material by adding a tensile stress of an tensile elastic modulus of the fiber×4.5×10?3 under an environment of 25° C. up to a limitation on which coiling occurs or a limitation on which a breakage occurs have a relationship of x>y+0.5.

Abstract: An information processing system includes: a processor in one information processing apparatus among information processing apparatuses coupled via a ring bus corresponding to a closed-loop bus; and a first memory, wherein the processor: generate a verification request for verification of completion of a write request after issuing the write request to a second memory in the information processing apparatuses; transmit the verification request to a subsequent information processing apparatus; transmit, when a request from a preceding information processing apparatus is not a verification request, the request to the subsequent information processing apparatus; transmit, when the request is a verification request to another information processing apparatus, the verification request and a request to the first memory to the subsequent information processing apparatus in order of receiving; and execute, when the request is a verification request to the one information processing apparatus, processing and generate

Abstract: Examples of a film forming method include placing a substrate on a susceptor arranged in a chamber, and introducing a hydrogen-containing gas and a nitrogen gas into the chamber, and applying radio frequency power to an electrode above the susceptor to generate plasma, and form a nitride film on the substrate, wherein a flow rate of the hydrogen-containing gas is equal to 1% or less of a flow rate of the nitrogen gas.

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided.

Abstract: A three-dimension forming support material includes a photocurable compound that contains an urethane (meth)acrylate and a non-photocurable polymer having a hydroxyl value of 60 mgKOH/g to 300 mgKOH/g.

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

Abstract: An arithmetic processing device includes arithmetic processing units, each having a calculator unit; a scheduler that controls a push instruction to write data to a register file in one of the arithmetic processing units and a pull instruction to read data from the register file; a pull request bus to which the scheduler outputs a pull request and are connected to the arithmetic processing units; a push request bus to which the scheduler outputs a push request and are connected to the arithmetic processing units; and a pull data bus that inputs, into the scheduler, pull data read from the register file in response to the pull request. The arithmetic processing unit includes a pull data turn-back bus that propagates the pull data read from the register file of the home calculator unit to the pull data bus.

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract: An information processing system includes: a processor in one information processing apparatus among information processing apparatuses coupled via a ring bus corresponding to a closed-loop bus; and a first memory, wherein the processor: generate a verification request for verification of completion of a write request after issuing the write request to a second memory in the information processing apparatuses; transmit the verification request to a subsequent information processing apparatus; transmit, when a request from a preceding information processing apparatus is not a verification request, the request to the subsequent information processing apparatus; transmit, when the request is a verification request to another information processing apparatus, the verification request and a request to the first memory to the subsequent information processing apparatus in order of receiving; and execute, when the request is a verification request to the one information processing apparatus, processing and generate

Abstract: An ink includes a radiation-curable compound, a liquid matter which is incompatible with the radiation-curable compound and is dispersed in a state of droplets, and a surfactant.