Abstract: A terminal apparatus includes: a communication interface that acquires data output from a data output apparatus and supplies power to the data output apparatus; a storage that writes the data to a medium; a controller that controls the storage; a power supply that supplies power to the storage; and a power receiver that receives power from an external power source and supplies power to the communication interface and the power supply. In response to detecting a power outage and/or a voltage drop of the external power source, the controller controls the communication interface to stop supplying power to the data output apparatus.

Abstract: A semiconductor device includes a gallium nitride substrate and a pattern film disposed on a front surface of the gallium nitride substrate. In the gallium nitride substrate, a Young's modulus in a first direction along the front surface is larger than a Young's modulus in a second direction along the front surface and orthogonal to the first direction. A first ratio R1 obtained by dividing a dimension of the gallium nitride substrate in the first direction by a dimension of the gallium nitride substrate in the second direction and a second ratio R2 obtained by dividing a dimension of the pattern film in the first direction by a dimension of the pattern film in the second direction satisfy a relationship of R1<R2.

Abstract: A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

Abstract: A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

Abstract: A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

Abstract: A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

Abstract: A method of manufacturing a gallium nitride substrate includes preparation of a gallium nitride wafer, formation of a transformation layer, and formation of the gallium nitride substrate. The gallium nitride has a first main surface and a second main surface on a side opposite from the first main surface. The gallium nitride wafer is made of a hexagonal crystal, and each of the first main surface and the second main surface is a {1-100} m-plane of the hexagonal crystal. The transformation layer is formed along a planar direction of the gallium nitride wafer by emitting a laser beam into the gallium nitride wafer. The gallium nitride substrate is formed from the gallium nitride wafer by dividing the gallium nitride wafer at the transformation layer. In the formation of the transformation layer, the laser beam is emitted to form an irradiation mark for forming the transformation layer.

Abstract: A method of manufacturing a semiconductor element includes formation of a modified layer, detection of a first region, and cutting of a semiconductor wafer. In the formation of the modified layer, a laser is irradiated on the semiconductor wafer to form the modified layer extending along a surface of the semiconductor wafer inside the semiconductor wafer. The surface of the semiconductor wafer includes a peripheral portion having the first region and a second region. The first region is a region in which the modified layer is not located, and the second region is a region in which the modified layer is formed. In the cutting of the semiconductor wafer, the semiconductor wafer is cut at the modified layer starting from the second region.

Abstract: A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

Abstract: A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {0001} c-plane, a {1-100} m-plane, and a {11-20} a-plane. One of the two pairs of opposing side surfaces is along another one of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The other of the two pairs of opposing side surfaces is along the other of the {0001} c-plane, the {1-100} m-plane, and the {11-20} a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

Abstract: A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

Abstract: A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

Abstract: A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

Abstract: A CPU reads out image data from a frame memory line by line, performs logical addition of each bit of readout original image data corresponding to one line and a corresponding bit of each image data acquired by shifting the original image data by one to four bits, and thereby generates image data whose width has been enlarged by four bits. When writing the image data enlarged in the leftward and rightward directions in a ring buffer, the CPU generates image data on a transfer base material which has been enlarged in the upward and downward directions by copying or logical addition. A transfer base material transfer control section outputs the image data on the transfer base material written in the ring buffer for each line to a print head control section under the control of the CPU at predetermined timing.

Abstract: A rotating electrical machine comprises a stator and a rotor. The rotor includes a rotor iron core in which a permanent magnet is disposed. The rotor iron core comprises a connection part, a plurality of magnetic pole part, a first gap, and a second gap for injection of the adhesive. The connection part is configured to surround a rotational axis. The plurality of magnetic pole parts are provided in an outer portion than the connection part in a radial direction. The first gap is configured to penetrate along an axial direction between the magnetic pole parts in an outer portion than the connection part in the radial direction and in which the permanent magnet is fixed with adhesive. At least one of the second gaps is provided for each of the first gaps in communication with the first gap.

Abstract: A rotating electrical machine includes a toric stator and a rotator located inside or outside the stator. The stator includes a plurality of teeth radially extending from the center of a circle of the stator with equal gap, and the plurality of coils arranged in order and in layers by the winding wire being turned a plurality of times around the circumference of each of a plurality of teeth. The number of turns of the two respective coils arranged on the circumference of the two adjacent teeth is different.

Abstract: A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm?3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Abstract: A system and method is disclosed wherein optical signals are coded in a transmitter by tuning or modulating the interbeam delay time (which modulates the fourth-order coherence) between pairs of entangled photons. The photon pairs are either absorbed or not absorbed (transparent) by an atomic or molecular fluorescer in a receiver, depending on the inter-beam delay that is introduced in the entangled photon pairs. Upon the absorption, corresponding fluorescent optical emissions follow at a certain wavelength, which are then detected by a photon detector. The advantage of the disclosed system is that it eliminates a need of a coincidence counter to realize the entanglement-based secure optical communications because the absorber acts as a coincidence counter for entangled photon pairs.