Abstract: The rotating electric machine includes a stator and a rotor. The rotating electric machine includes a rotor iron core including a plurality of magnetic pole portions in a circumferential direction, a plurality of permanent magnets provided on the rotor iron core, and a stator iron core including a plurality of teeth around each of which coil winding is wound. The stator iron core is configured in such a manner that the tooth facing the magnetic pole portion in the radial direction is substantially magnetically saturated by the permanent magnet in a non-energized state of the stator winding.

Abstract: An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.

Abstract: A rotating electrical machine comprises a stator and a rotor. The rotor includes a rotor iron core in which a permanent magnet is disposed. The rotor iron core comprises a connection part, a plurality of magnetic pole part, a first gap, and a second gap for injection of the adhesive. The connection part is configured to surround a rotational axis. The plurality of magnetic pole parts are provided in an outer portion than the connection part in a radial direction. The first gap is configured to penetrate along an axial direction between the magnetic pole parts in an outer portion than the connection part in the radial direction and in which the permanent magnet is fixed with adhesive. At least one of the second gaps is provided for each of the first gaps in communication with the first gap.

Abstract: A rotating electrical machine includes a toric stator and a rotator located inside or outside the stator. The stator includes a plurality of teeth radially extending from the center of a circle of the stator with equal gap, and the plurality of coils arranged in order and in layers by the winding wire being turned a plurality of times around the circumference of each of a plurality of teeth. The number of turns of the two respective coils arranged on the circumference of the two adjacent teeth is different.

Abstract: To provide a clock signal generating device that changes the frequency of a predetermined clock signal in a short time and prevents or mitigates instability in the operation of the supply destinations of the clock signal when the frequency of the clock signal is changing. The clock signal generating device is provided with a second control unit that, when the target frequency changes, successively changes the voltage impressed on the clock signal generating unit with a preset change value and a preset interval in a preset time in place of the first control unit, causing the frequency of the clock signal newly generated by the clock signal generating unit to approach the target frequency.

Abstract: A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal.

Abstract: A medicament for promoting proliferation of hepatocytes and liver regeneration, which comprises a polyprenyl compound such as 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid as an active ingredient.

Abstract: An architecture for spontaneous Raman scattering (SRS) that utilizes a frame-transfer charge-coupled device (CCD) sensor operating in a subframe burst gating mode to realize time-resolved combustion diagnostics is disclosed. The technique permits all-electronic optical gating with microsecond shutter speeds (<5 ?s), without compromising optical throughput or image fidelity. When used in conjunction with a pair of orthogonally-polarized excitation lasers, the technique measures time-resolved vibrational Raman scattering that is minimally contaminated by problematic optical background noise.

Abstract: A medicament for promoting proliferation of hepatocytes and liver regeneration, which comprises a polyprenyl compound such as 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid as an active ingredient.

Abstract: An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.

Abstract: A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm?3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Abstract: A silicon carbide single crystal manufacturing apparatus includes a pedestal on which a seed crystal is disposed and a heating crucible disposed on an upstream side of a flow channel of source gas with respect to the pedestal. The heating crucible supplies the source gas to the seed crystal by introducing the source gas from an upstream end of a hollow cylindrical member and discharging the source gas from a downstream end of the hollow cylindrical member. A diameter narrowing part is disposed on the downstream end and has an opening portion that is smaller than an opening size of the hollow cylindrical member. The whole opening portion of the diameter narrowing part is included in a region that is defined by projecting an outer edge of the pedestal in a center axis direction of the heating crucible.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: To provide a clock signal generating device that changes the frequency of a predetermined clock signal in a short time and prevents or mitigates instability in the operation of the supply destinations of the clock signal when the frequency of the clock signal is changing. The clock signal generating device is provided with a second control unit that, when the target frequency changes, successively changes the voltage impressed on the clock signal generating unit with a preset change value and a preset interval in a preset time in place of the first control unit, causing the frequency of the clock signal newly generated by the clock signal generating unit to approach the target frequency.

Abstract: A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle.

Abstract: An optical pulse stretcher and a mathematical algorithm for the detailed calculation of its design and performance is disclosed. The optical pulse stretcher has a plurality of optical cavities, having multiple optical reflectors such that an optical path length in each of the optical cavities is different. The optical pulse stretcher also has a plurality of beam splitters, each of which intercepts a portion of an input optical beam and diverts the portion into one of the plurality of optical cavities. The input optical beam is stretched and a power of an output beam is reduced after passing through the optical pulse stretcher and the placement of the plurality of optical cavities and beam splitters is optimized through a model that takes into account optical beam divergence and alignment in the pluralities of the optical cavities.

Abstract: A medicament for promoting proliferation of hepatocytes and liver regeneration, which comprises a polyprenyl compound such as 3,7,11,15-tetramethyl-2,4,6,10,14-hexadecapentaenoic acid as an active ingredient.

Abstract: A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.