Abstract: A semiconductor substrate has a plurality of different size recesses formed in the substrate to provide a stepped interposer. A conductive via can be formed through the stepped interposer. An insulating layer follows a contour of the stepped interposer. A conductive layer is formed over the insulating layer following the contour of the stepped interposer. A first semiconductor die is partially disposed in a first recess and electrically connected to the conductive layer. A second semiconductor die is partially disposed in a second recess and electrically connected to the conductive layer. The first semiconductor die is electrically connected to the second semiconductor die through the conductive layer. The first and second semiconductor die can be flipchip type semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of the stepped interposer can be removed to reduce thickness.

Abstract: A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.

Abstract: A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.

Abstract: A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality of conductive pillars can be formed over the contact pads of the semiconductor die. The bumps are formed over the conductive pillars. The semiconductor die is mounted to the conductive layer with the bumps directly bonded to an end portion of the trace lines to provide a fine pitch interconnect. An encapsulant is deposited over the semiconductor die and conductive layer. The conductive layer contains wettable material to reduce die shifting during encapsulation. The carrier is removed. An interconnect structure is formed over the encapsulant and semiconductor die. An insulating layer can be formed over the conductive layer.

Abstract: A semiconductor device has a first semiconductor die mounted over a carrier. A leadframe has a plurality of conductive leads and first and second bodies extending from the opposite sides of the conductive leads. The leadframe is mounted to the carrier with the conductive lead disposed over the first semiconductor die and the bodies disposed around the first semiconductor die. An adhesive layer is deposited between the first semiconductor die and conductive leads. A second semiconductor die is mounted over the leadframe and electrically connected to the conductive leads. An encapsulant is deposited over the first semiconductor die. The carrier is removed. A first interconnect structure is formed over a first surface of the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant. The first and second interconnect structures are electrically connected to the first and second bodies of the leadframe.

Abstract: A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical stand-off of the semiconductor die as headroom for the first discrete components. The second discrete components are disposed outside a footprint of the semiconductor die. Conductive TSV can be formed through the semiconductor die. An encapsulant is deposited over the semiconductor die and first and second discrete components. The wettable contact pads reduce die and discrete component shifting during encapsulation. A portion of a back surface of the semiconductor die is removed to reduce package thickness. An interconnect structure is formed over the encapsulant and semiconductor die. Third discrete semiconductor components can be mounted over the semiconductor die.

Abstract: A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. A shielding layer is formed between the first and second semiconductor die. An electrical interconnect, such as conductive pillar, bump, or bond wire, is formed between the first and second semiconductor die. A conductive TSV can be formed through the first and second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and electrical interconnect. A heat sink is formed over the second semiconductor die. An interconnect structure, such as a bump, can be formed over the second semiconductor die. A portion of a backside of the first semiconductor die is removed. A protective layer is formed over exposed surfaces of the first semiconductor die. The protective layer covers the exposed backside and sidewalls of the first semiconductor die.

Abstract: A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation.

Abstract: A semiconductor device has a first semiconductor die with a sloped side surface. The first semiconductor die is mounted to a temporary carrier. An RDL extends from a back surface of the first semiconductor die along the sloped side surface of the first semiconductor die to the carrier. An encapsulant is deposited over the carrier and a portion of the RDL along the sloped side surface. The back surface of the first semiconductor die and a portion of the RDL is devoid of the encapsulant. The temporary carrier is removed. An interconnect structure is formed over the encapsulant and exposed active surface of the first semiconductor die. The RDL is electrically connected to the interconnect structure. A second semiconductor die is mounted over the back surface of the first semiconductor die. The second semiconductor die has bumps electrically connected to the RDL.

Abstract: A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.

Abstract: A semiconductor wafer contains a plurality of semiconductor die each having a plurality of contact pads. A sacrificial adhesive is deposited over the contact pads. Alternatively, the sacrificial adhesive is deposited over the carrier. An underfill material can be formed between the contact pads. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier such that the sacrificial adhesive is disposed between the contact pads and temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and sacrificial adhesive is removed to leave a via over the contact pads. An interconnect structure is formed over the encapsulant. The interconnect structure includes a conductive layer which extends into the via for electrical connection to the contact pads. The semiconductor die is offset from the interconnect structure by a height of the sacrificial adhesive.

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.

Abstract: A hand-shake correction apparatus and method for a camera module for typical use in a mobile device. A camera unit includes an angular velocity sensor for sensing an angular velocity of a hand-shake motion of a camera, a position detection sensor for detecting a current position of an image sensor, and an actuator for actuating the image sensor. An Optical Image Stabilizer (OIS) circuit unit controls the actuator using a multi-rate Proportional Integrate Derivative (PID) control scheme that performs control a plurality of times using a shorter control period compared with existing PID controls for a basic period, in which a reference value is updated according to a control reference value by which the image sensor optimally shifts to correct a hand-shake motion.

Abstract: A PID controlling apparatus and method for providing a control value to a control object according to the difference between an output value of the control object and a target value are provided, in which an error calculator outputs an error value between the target value and the output value of the control object, a PID operator calculates a proportional value, an integral value, and a derivative value of the error value, calculates the control value using the proportional value, the integral value, and the derivative value, and outputs the control value to the control object, a first sampler samples the output value of the control object a plurality of times with respect to the target value and outputs a sampled output value, and a controller controls the PID operator to repeat a PID operation and output the control value according to a sampling period of the first sampler.

Abstract: A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.

Abstract: Disclosed is an optical image stabilizer for use with a camera lens assembly. The optical image stabilizer including a fixable substrate; a movable substrate movably disposed on the fixable substrate, a fixable comb structure fixed on the fixable substrate and disposed on the movable substrate, and a movable comb structure disposed on the movable substrate and capable of moving on the fixable substrate with the movable substrate, wherein the movable substrate is moved by an attraction force acting between the fixable comb structure and the movable comb structure, when an electromotive force is applied to the fixable comb structure and the movable comb structure. In the optical image stabilizer, the movable substrate on which an image sensor is disposed and the elements for moving the movable substrate are manufactured using MEMS technology, thereby facilitating downsizing of optical image stabilizers and improving the precision of products.

Abstract: A PID controlling apparatus and method for providing a control value to a control object according to the difference between an output value of the control object and a target value are provided, in which an error calculator outputs an error value between the target value and the output value of the control object, a PID operator calculates a proportional value, an integral value, and a derivative value of the error value, calculates the control value using the proportional value, the integral value, and the derivative value, and outputs the control value to the control object, a first sampler samples the output value of the control object a plurality of times with respect to the target value and outputs a sampled output value, and a controller controls the PID operator to repeat a PID operation and output the control value according to a sampling period of the first sampler.

Abstract: A hand-shake correction apparatus and method for a camera module for typical use in a mobile device. A camera unit includes an angular velocity sensor for sensing an angular velocity of a hand-shake motion of a camera, a position detection sensor for detecting a current position of an image sensor, and an actuator for actuating the image sensor. An Optical Image Stabilizer (OIS) circuit unit controls the actuator using a multi-rate Proportional Integrate Derivative (PID) control scheme that performs control a plurality of times using a shorter control period compared with existing PID controls for a basic period, in which a reference value is updated according to a control reference value by which the image sensor optimally shifts to correct a hand-shake motion.

Abstract: An apparatus for generating pilot beacon signals for handoff between base stations having a different frequency assignment FA in a code division multiple access CDMA radio communication system includes a PN code generating unit for generating inphase (I)-channel and quadrature (Q)-channel pseudo noise (PN) sequences; a pulse shaping unit for shaping an I-channel and Q-channel PN signal by filtering the I-channel and Q-channel PN sequences; an equalizing unit for equalizing phases of the I-channel PN signal and the Q-channel PN signal and generating an equalized I-channel signal and an equalized Q-channel signal; an interpolation filtering unit for converting frequencies of the equalized I-channel signal with the equalized Q-channel signal to intermediate frequencies (IF) and generating an IF I-channel signal and an IF Q-channel signal; a modulation unit for modulating IF I-channel and Q-channel signals and generating a modulated I-channel signal and a modulated Q-channel signal; a combining unit for combining

Abstract: An optical demultiplexer having at least one Bragg diffraction grating for minimizing crosstalk on the sides of transmitting and receiving optical signals, as well as an optical communication module using the optical demultiplexer. The optical demultiplexer has first and second waveguides arranged adjacent each other in a predetermined section in order to perform mode coupling, so that the optical signals input through one end of the first waveguide are transmitted to a light receiving element through the second waveguide, and in which output light waves inputted through the other end of the first waveguide are output through the one end of the first waveguide. A first Bragg diffraction grating is formed on the second waveguide and haa wavelength selectivity, for minimizing crosstalk by transmitting a reception wavelength of the optical signals at about 100% and by reflecting a wavelength of the output light waves at about 100%.