Abstract: A motor teaching system is provided with a force presentation robot for teaching motion in accordance with a predetermined motor pattern by guiding movement of a movable part of the body of a test subject, a brainwave sensor, and a computer that classifies a cerebral activity pattern into one of a plurality of classes that include motor imagery, based on a brainwave signal. The computer guides evoking contents of the test subject prior to teaching of the motor pattern, such that a classification result obtained in the period of teaching the motor pattern will be the motor imagery class.

Abstract: A rotational structure is configured such that a hollow portion, in which a base member is opposed to a rotational member, is formed around a shaft member. An encoder provided in the hollow portion includes a detection target member rotated together with one of the rotational member and the base member and having a physical quantity changing in a circumferential direction, and a detector capable of detecting the physical quantity of the detection target element and rotated together with the other of the rotational member and the base member.

Abstract: A modularized externally-driven joint structure can be used for general purposes. An externally-driven joint structure: includes a shaft member that extends in an axial direction; and a number of rotatable members that are arranged along the axial direction, and are coupled with each other by the shaft member in an axially rotatable manner. Each of the rotatable members includes a pair of face portions that face each other in the axial direction, a side wall portion that is arranged along the outer circumferential edges of the pair of face portions, and at least one coupling portion that is arranged at the face portions or the side wall portion, and is coupled with a link member constituting a link of a robot.

Abstract: A light-device mounting structure of a vehicle includes a headlight unit including a lamp housing accommodating a light source. Support shafts are provided in the lamp housing and are supported in a light cover. In the light-device mounting structure, the support shafts are covered with support-shaft protective members. The support-shaft protective members are engaged non-rotatably relative to the support shafts. The light cover has fitting holes, and the support shafts are fitted into the fitting holes through the support-shaft protective members.

Abstract: A stroke sensor includes a cover that covers a slide end on a protrusion side of a shaft in a slide region between the shaft and a housing while allowing a relative movement between the shaft and the housing, wherein a flange surface the extends radially outward from the slide end is provided on the housing, an axial direction seal that is in close contact with the flange surface in the axial line direction is provided on the cover, and a fixation member that presses the axial direction seal to be in contact with the flange surface is further provided.

Abstract: A stroke sensor includes: a shaft that extends in an axial line direction; a detected body that is fixed to the shaft; a housing that extends along the shaft, that houses the shaft, and that supports the shaft slidably in the axial line direction; and a detection body that detects a movement amount of the detected body which moves in accordance with sliding of the shaft, wherein the shaft includes a plurality of shaft members that are connected to each other in the axial line direction and that are formed of metal, and a slide part that is in contact with an inner wall of the housing and that slides so as to regulate a movement of the shaft in a direction that is crossed with the axial line is provided on each of the plurality of shaft members.

Abstract: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

Abstract: In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.

Abstract: [Object] To provide a hybrid actuator attaining both driving force and responsiveness, capable of reducing inertia of a movable portion. [Solution] A pneumatic air muscle has a cylinder (112) provided in a flexible member (100) forming a pneumatic artificial muscle. At the center of an upper lid element (109) of the cylinder, a through hole is opened, and an inner wire (103) of a Bowden cable passes through this through hole and is coupled by means of a spring (106) to a bottom portion of the cylinder. When the pneumatic artificial muscle contracts, the inner wire (103) and the pneumatic air muscle move together because of the stopper (105), and the contraction force is transmitted. In contrast, when the pneumatic air muscle extends, the stopper (105) is disengaged, while the tension of inner wire (103) is kept by the spring (106) to prevent slacking.

Abstract: [Object] To provide a compact, high-output actuator device allowing force control. [Solution] An actuator device 1000 includes an electromagnetic coil member 110 provided over a prescribed width on an outer circumference of a cylinder 100, and a movable element 200 slidable as a piston in the cylinder 100. The movable element 200 has a magnetic member 202, and is moved relatively by excitation of the electromagnetic coil member 110. Fluid is supplied to first and second chambers 106a and 106b such that when the movable element 200 is to be moved relatively, the movable element 200 is driven in the same direction.

Abstract: A silicon carbide semiconductor device includes: a vertical MOSFET having: a semiconductor substrate including a high-concentration impurity layer and a drift layer; a base region; a source region; a trench gate structure; a source electrode; and a drain electrode. The base region has a high-concentration base region and a low-concentration base region having a second conductivity type with an impurity concentration lower than the high-concentration base region, which are stacked each other. Each of the high-concentration base region and the low-concentration base region contacts a side surface of the trench.

Abstract: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

Abstract: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

Abstract: A silicon carbide semiconductor device includes: a vertical MOSFET having: a semiconductor substrate including a high-concentration impurity layer and a drift layer; a base region; a source region; a trench gate structure; a source electrode; and a drain electrode. The base region has a high-concentration base region and a low-concentration base region having a second conductivity type with an impurity concentration lower than the high-concentration base region, which are stacked each other. Each of the high-concentration base region and the low-concentration base region contacts a side surface of the trench.

Abstract: A light-device mounting structure of a vehicle includes a headlight unit including a lamp housing accommodating a light source. Support shafts are provided in the lamp housing and are supported in a light cover. In the light-device mounting structure, the support shafts are covered with support-shaft protective members. The support-shaft protective members are engaged non-rotatably relative to the support shafts. The light cover has fitting holes, and the support shafts are fitted into the fitting holes through the support-shaft protective members.

Abstract: A portable information apparatus of an embodiment includes a display unit having a display portion and a panel, a housing having a front frame and a rear frame, and a mounting substrate arranged therein. The display portion has a display surface and a back surface. The panel is arranged on the display surface of the display portion and has a back surface, a display surface and a side surface. The back surface of the panel is formed at a display surface side of the display portion. The front frame is formed to surround the side surface of the panel. The rear frame is arranged at a back surface side of the display portion, contacts the front frame, and opposes to the display unit. The rear frame has a first rear frame and a second rear frame, and the first rear frame has rigidity larger than the second rear frame.

Abstract: Provided is a brain activity training apparatus for training to cause a change in correlation of connectivity among brain regions, utilizing measured correlations of connections among brains regions as feedback information. From measured data of resting-state functional connectivity MRI of a healthy group and a patient group (S102), correlation matrix of degree of brain activities among prescribed brain regions is derived for each subject. Feature extraction is executed (S104) by regularized canonical correlation analysis on the correlation matrix and attributes of the subject including a disease/healthy label of the subject. Based on the result of regularized canonical correlation analysis, by discriminant analysis through sparse logistic regression, a discriminator is generated (S108). The brain activity training apparatus feeds back a reward value to the subject based on the result of discriminator on the data of functional connectivity MRI of the subject.

Abstract: Provided is a method of analyzing brain activities for realizing a biomarker for neurological/mental disorder, based on brain function imaging. From measured data of resting-state functional connectivity MRI of a healthy group and a patient group, correlation matrix (80) of degree of brain activities among prescribed brain regions is derived for each subject. Feature extraction is executed by regularized canonical correlation analysis (82) on the correlation matrix (80) and attributes of the subject including a disease/healthy label of the subject. Based on the result of regularized canonical correlation analysis, by discriminant analysis (86) through sparse logistic regression, a discriminator (88) is generated.

Abstract: According to an embodiment, an ultrasonic probe includes a backing plate, a piezoelectric element, and a protective layer. The piezoelectric element has a piezoelectric vibrator. The piezoelectric element is provided on the backing plate. The protective layer is provided on the surface of an end of the piezoelectric element on the side of the backing plate. Compressive stress is applied to the inside of the protective layer, and the transmission rate of sound inside the protective layer is a predetermined rate.

Abstract: In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.