Abstract: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

Abstract: An electronic apparatus includes: a first molded body; a second molded body which composes housing with the first molded body; a first conductive pattern provided in the housing; a second conductive pattern provided on an outer surface of the housing; and a first conductive member. The first conductive member passes through a gap of a mating face between the first molded body and the second molded body. The first conductive member connects the first conductive pattern and the second conductive pattern.

Abstract: An electronic apparatus includes: a first molded body; a second molded body which composes housing with the first molded body; a first conductive pattern provided in the housing; a second conductive pattern provided on an outer surface of the housing; and a first conductive member. The first conductive member passes through a gap of a mating face between the first molded body and the second molded body. The first conductive member connects the first conductive pattern and the second conductive pattern.

Abstract: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

Abstract: According to one embodiment, an electronic device includes a display panel, an optical layer, an operation panel, a bonding layer, a first housing, and a second housing. The optical layer is provided on a display surface side of the display panel. The operation panel is adhered to the display panel. A peripheral portion of the operation panel protrudes sideward from the display panel. The bonding layer is provided on a side of the display panel opposite to the optical layer. The first housing includes containing and protruding portions. The protruding portion protrudes sideward from the containing portion to be adhered to the peripheral portion of the operation panel. The containing portion is adhered to the display panel. The second housing includes a bonding portion adhered to the peripheral portion of the operation panel. The second housing defines a containment space between the first and second housings.

Abstract: The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.

Abstract: According to one embodiment, an electronic apparatus includes a display, a rear cover, a supporter, and a front mask. The rear cover is configured to cover a rear surface of the display. The supporter is between the display and the rear cover. The supporter is configured to support the rear surface of the display. The front mask is exposed to an outside. The front mask includes an opening and a protrusion. The opening is configured to expose a front surface of the display. The protrusion is configured to support the display. The protrusion includes a first portion and a second portion. The first portion is configured to face a side surface of the display. The second portion is configured to face a side surface of the supporter.

Abstract: According to one embodiment, an electronic apparatus includes a display, a rear cover, and a front mask. The rear cover is configured to cover a rear surface of the display. The front mask is configured to be exposed to an outside and includes an opening and a supporter. The opening is configured to expose a front surface of the display. The supporter is configured to support the display and includes a first portion and a second portion. The first portion is configured to face a side surface of the display. The second portion protrudes from the first portion toward the rear cover. The second portion is closer to the rear cover than the rear surface of the display.

Abstract: A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.

Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract: A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

Abstract: A fuel cell two-wheel vehicle is provided with: a fuel cell, fuel tanks, a supercharger, a pipe line, an in-wheel motor, and a motor driver. The fuel cell generates electric power using hydrogen and air as reaction sources. The fuel tanks supply hydrogen to the fuel cell through a hydrogen supply path. The supercharger supplies air from the outside air to the fuel cell. Through the pipe line, an exhaust from the fuel cell is discharged to the outside. The in-wheel motor serves as a driving source of the fuel cell two-wheel vehicle, and the motor driver drives the in-wheel motor. In an air system, a route and an outlet of the pipe line are arranged to be directed toward the motor driver. Thus, a heat sink is exposed to the discharged air having passed through the fuel cell, and thereby the motor driver is cooled.

Abstract: A first semiconductor chip includes a first inductor and a second inductor, and a second semiconductor chip includes a third inductor and a fourth inductor. The first inductor is connected to a first receiving circuit of the first semiconductor chip, and the second inductor is connected to a second transmitting circuit of the second semiconductor chip through a first bonding wire. The third inductor is connected to a second receiving circuit of the second semiconductor chip, and the fourth inductor is connected to a first transmitting circuit of the first semiconductor chip through a second bonding wire.

Abstract: A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.

Abstract: A lamp device-integrated rearview mirror 30 includes a mirror member 34 oriented toward the rear side of a vehicle body and a single bulb 40 provided in a housing 31 attached to the vehicle body. The lamp device-integrated rearview mirror may also include a reflecting member 35 configured to reflect the light emitted from the bulb 40 toward the rear side of the vehicle body and a reflector 36 configured to reflect the light toward the front side of the vehicle body. The reflecting member 35 may be provided on the rear side of a lens 32 attached to the housing 31 to transmit the irradiation light, and the reflector 36 may be provided inside the housing 31. The mirror member 34 may be fitted in the opening portion of the housing 31.

Abstract: A lighting apparatus has a housing and is disposed at a lower end of a front fork of a motorcycle. The housing includes a front opening disposed on a side of a radiation direction of a lighting body and a side opening disposed on a center side in a width direction of a motorcycle. The side opening in the housing, covered by a lid, is wide enough for the lighting body to pass through. The housing includes a wire guide for withdrawing an electric wire and a drain hole formed in a bottom portion of the housing. The lighting body is fixed on a board. The housing includes rails disposed on an upper wall portion and a lower wall portion thereof, into which an upper end and a lower end of the board are to be fitted so as to position the lighting body in a longitudinal direction.

Abstract: A chassis includes: a flat plate portion including a first major surface and a second major surface facing the first major surface; a protruding portion provided on an outer edge of the flat plate portion and protruding in a direction crossing the first and second major surfaces; and a seal portion provided on the outer edge of the flat plate portion.

Abstract: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

Abstract: A semiconductor package includes a radiator plate including a stress alleviation section, a resin sheet arranged on the radiator plate, a pair of bus bars joined to the radiator plate through the resin sheet at positions at which the stress alleviation section is interposed between the bus bars, and a semiconductor device joined to the pair of bus bars by being sandwiched between the bus bars, and energized from outside through the pair of bus bars.

Abstract: An electronic apparatus includes: a first molded body; a second molded body which composes a housing with the first molded body; a first conductive pattern provided on an outer surface of the first molded body; a second conductive pattern provided in the housing; and a first conductive pin. The first conductive pin passes through the first molded body and connects the first conductive pattern and the second conductive pattern.