Abstract: The invention relates to a compound of a general formula (I): wherein Ar1 represents a group formed from an aromatic ring selected from a group consisting of benzene, pyrazole, isoxazole, pyridine, indole, 1H-indazole, 1H-furo[2,3-c]pyrazole, 1H-thieno[2,3-c]pyrazole, benzimidazole, 1,2-benzisoxazole, imidazo[1,2-a]pyridine, imidazo[1,5-a]pyridine and 1H-pyrazolo[3,4-b]pyridine, having Ar2, and optionally having one or two or more substituents selected from R3: R1 and R2 each independently represent a hydrogen atom, a halogen atom, a cyano group, a C2-C6 alkenyl group, a C1-C6 alkoxy group, a C2-C7 alkanoyl group, a C2-C7 alkoxycarbonyl group, an aralkyloxycarbonyl group, a carbamoyl-C1-C6 alkoxy group, a carboxy-C2-C6 alkenyl group, or a group of -Q1-N(Ra)-Q2-Rb; or a C1-C6 alkyl group optionally having a substituent; or an aryl or heterocyclic group optionally having a substituent; or a C1-C6 alkyl group or a C2-C6 alkenyl group having the aryl or heterocyclic group; T and U each independently represent a n

Abstract: In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 ?m or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.

Abstract: A quinoxalinone derivative of the formula (I): or a pharmaceutically acceptable salt or ester thereof, wherein; X is NH, S or the like; Y is O or the like; the partial structure is, for example, the formula: B1, B2, . . . , Bn?1 and Bn, (in which n is 4, 5 or 6) are each independently CH, N or the like; B?1, B?2, . . . , B?n?1 and B?n (in which n is 4, 5 or 6) are each independently hydrogen or the like; and R is hydrogen, lower alkyl or the like.

Abstract: The invention relates to a compound of a formula (I): or a pharmaceutically acceptable salt or ester thereof, useful as a therapeutic agent for various ACC-related disorders.

Abstract: The invention relates to a compound of a formula (I): or a pharmaceutically acceptable salt or ester thereof, useful as a therapeutic agent for various ACC-related disorders.

Abstract: The invention relates to a compound of a general formula (I): wherein Ar1 represents a group formed from an aromatic ring selected from a group consisting of indole, 1H-indazole, 2H-indazole, 1H-thieno[2,3-c]pyrazole, 1H-pyrazolo[3,4-b]pyridine, benzo[b]furan, benzimidazole, benzoxazole, 1,2-benzisoxazole and imidazo[1,2-a]pyridine; R1 and R2 each represent a hydrogen atom, a halogen atom, a cyano group, a C2-C6 alkenyl group, a C1-C6 alkoxy group, a halo-C1-C6 alkoxy group, a cyclo-C3-C6 alkyloxy group, a C2-C7 alkanoyl group, a halo-C2-C7 alkanoyl group, a C2-C7 alkoxycarbonyl group, a halo-C2-C7 alkoxycarbonyl group, a cyclo-C3-C6 alkyloxycarbonyl group, an aralkyloxycarbonyl group, a carbamoyl-C1-C6 alkoxy group, a carboxy-C2-C6 alkenyl group, or a group of -Q1-N(Ra)-Q2-Rb; an optionally-substituted C1-C6 alkyl, aryl or heterocyclic group; or a C1-C6 alkyl or C2-C6 alkenyl group having the aryl or heterocyclic group; R3 and R4 each represent a hydrogen atom, a halogen atom, a nitro group, a cyclo-C3-C

Abstract: A quinoxalinone derivative of the formula (I): or a pharmaceutically acceptable salt or ester thereof, wherein; X is NH, S or the like; Y is O or the like; the partial structure is, for example, the formula: B1, B2, . . . , Bn?1 and Bn, (in which n is 4, 5 or 6) are each independently CH, N or the like; B?1, B?2, . . . , B?n?1 and B?n (in which n is 4, 5 or 6) are each independently hydrogen or the like; and R is hydrogen, lower alkyl or the like.

Abstract: The present invention relates to a compound represented by Formula [I]: wherein X is O, S, NH or CH2; Y1, Y2, Y3, Y4 and Y5, which may be identical or different, are each CH or N; however, at least one of Y1, Y2, Y3, Y4 and Y5 is N; Z1 and Z2, which may be identical or different, are each CH or N; n is an integer from 1 to 3; R1 is a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aliphatic heterocyclic ring or an aromatic heterocyclic ring, or a bicyclic aliphatic saturated hydrocarbon group; R2 and R3, which may be identical or different, are each a hydrogen atom, a lower alkyl group, a lower alkenyl group, a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aromatic heterocyclic ring, or the like; and R4 is a hydrogen atom, a lower alkyl group, a C3-C6 cycloalkyl group or the like, or a pharmaceutically acceptable salt or ester thereof, and a selective inhibitor against Cdk4 and/or Cdk6 or an anticancer agent containing the compound or a pharmaceutically acceptable salt or ester thereof.

Abstract: The invention relates to a compound of a formula (I): or a pharmaceutically acceptable salt or ester thereof, useful as a therapeutic agent for various ACC-related disorders.

Abstract: While a spectrum waveform of an output signal from a subtracter (207) is visibly monitored, an operator controls a variable phases shifter (208) based upon a second control signal (CL2) so that a shape of a spectrum waveform of an output signal from a subtracter (207) is approximated to a spectrum waveform of a desirable wave to change a phase of a local oscillation frequency signal from a local oscillator (206). As a result, a phase of a duplicated loop signal is changed. Also, the operator controls a variable attenuator (209) based upon a first control signal (CL1) so that a shape of this spectrum waveform is approximated to a spectrum waveform of a desirable wave (20) to change a signal level of the duplicated loop signal.

Abstract: In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 ?m or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.

Abstract: A quinoxalinone derivative of the formula (I): or a pharmaceutically acceptable salt or ester thereof, wherein; X is NH, S or the like; Y is O or the like; the partial structure is, for example, the formula: B1, B2, . . . , Bn-1 and Bn, (in which n is 4, 5 or 6) are each independently CH, N or the like; B?1, B?2, . . . , B?n-1 and B?n (in which n is 4, 5 or 6) are each independently hydrogen or the like; and R is hydrogen, lower alkyl or the like.

Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first pad, a second pad and a conductor. The first pad is formed on the interlayer insulating film and its circumferential edges are covered with a first surface-protecting film. The second pad formed on the interlayer insulating film facing the first pad across a second surface-protecting film, and its circumferential edges are covered with a third surface-protecting film. The conductor is provided continuously on the first pad, the first to third surface-protecting films, and the second pad.

Abstract: A semiconductor package includes an upper substrate having an opening portion, a solder ball for connection between substrates arranged on the lower side of the upper substrate, a lower substrate arranged on the further lower side and having an opening portion, a solder ball for external connection connected on the lower surface of the lower substrate, and a semiconductor chip affixed on each substrate. The semiconductor chip is electrically connected to the solder ball through the opening portion of each substrate. The solder ball for connection between substrates is electrically connected to the solder ball for external connection.

Abstract: In a semiconductor device, a first semiconductor including a substrate, and a semiconductor chip disposed on the major surface of the substrate and sealed with a resin; a wiring board; spacers disposed between the wiring board and the substrate; and a second semiconductor. At this time, the second semiconductor is electrically connected to the wiring board and disposed in the space formed by the wiring board, the substrate, and the spacer. The spacer is disposed so as to the first semiconductor to the wiring board electrically.

Abstract: First electrodes disposed on the surface of the substrate comprise a plurality of chip select electrodes, and the first chip select electrode among a plurality of chip select electrodes to in electrically connected only to a semiconductor element. The N-th (N is a integer of 2 or more) chip select electrode is electrically connected only to the second electrode disposed on the back at position corresponding to the (N−1)-th chip select electrode, and the plurality of chip select electrodes are sporadically disposed in the first electrodes.

Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first pad, a second pad and a conductor. The first pad is formed on the interlayer insulating film and its circumferential edges are covered with a first surface-protecting film. The second pad formed on the interlayer insulating film facing the first pad across a second surface-protecting film, and its circumferential edges are covered with a third surface-protecting film. The conductor is provided continuously on the first pad, the first to third surface-protecting films, and the second pad.

Abstract: A semiconductor package includes an upper substrate having an opening portion, a solder ball for connection between substrates arranged on the lower side of the upper substrate, a lower substrate arranged on the further lower side and having an opening portion, a solder ball for external connection connected on the lower surface of the lower substrate, and a semiconductor chip affixed on each substrate. The semiconductor chip is electrically connected to the solder ball through the opening portion of each substrate. The solder ball for connection between substrates is electrically connected to the solder ball for external connection.

Abstract: A resin-sealed chip stack type semiconductor device comprises a substrate placed on many balls, a bottom chip to which wires are connected, a top chip to which wires are connected and mounted above the bottom chip, a non-conductive bonding layer which functions to bond and fix the two chips to each other, and a sealing resin which covers and protects all the components mounted on the substrate. The non-conductive bonding layer is provided by die bonding in such a manner that is at least covers the portion of the bottom chip where the corresponding wires are connected and does not allow generation of a gap between the two chips.

Abstract: First electrodes disposed on the surface of the substrate comprise a plurality of chip select electrodes, and the first chip select electrode among a plurality of chip select electrodes to in electrically connected only to a semiconductor element. The N-th (N is a integer of 2 or more) chip select electrode is electrically connected only to the second electrode disposed on the back at position corresponding to the (N−1)-th chip select electrode, and the plurality of chip select electrodes are sporadically disposed in the first electrodes.