Abstract: In a semiconductor device, a logic MOSFET and a switch MOSFET are formed in a high-resistance substrate. The logic MOSFET includes an epitaxial layer formed on the high-resistance substrate and a well layer formed on the epitaxial layer. The switch MOSFET includes a LOCOS oxide film formed on the high-resistance substrate, the LOCOS oxide film being sandwiched between trenches and thus having a mesa-shape in its upper part. The switch MOSFET further includes a buried oxide film and a SOI layer formed on the mesa-shape of the LOCOS oxide film. The upper surface of the mesa-shape of the LOCOS oxide film is positioned at the same height as the upper surface of the epitaxial layer.

Abstract: The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.

Abstract: The present invention aims to provide a fuel cell anode, a membrane electrode assembly and a fuel cell, so as to obtain high electric power. The fuel cell anode has an electrode catalyst layer, and the electrode catalyst layer comprises a supported catalyst comprises electrically conductive carriers and fine catalytic particles supported thereon, a proton-conductive inorganic oxide supporting SiO2 on its surface, and a proton-conductive organic polymer binder. The SiO2 supported on the inorganic oxide prevents the oxide particles from growing, to ensure the high electric power. It is necessary to control the mixing ratios among the supported catalyst, the proton-conductive oxide and the proton-conductive binder in particular ranges.

Abstract: Sales promotion assisting systems are disclosed. Such systems include a sales promotion assisting system in which specific incentive is retrieved by passing a portable terminal or the like over a predetermined terminal installed in a store such as an eating and drinking establishment. An incentive can be exchanged for an item or the like of application software such as a game, which can lead to sales promotion.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor.

Abstract: In a semiconductor device, a logic MOSFET and a switch MOSFET are formed in a high-resistance substrate. The logic MOSFET includes an epitaxial layer formed on the high-resistance substrate and a well layer formed on the epitaxial layer. The switch MOSFET includes a LOCOS oxide film formed on the high-resistance substrate, the LOCOS oxide film being sandwiched between trenches and thus having a mesa-shape in its upper part. The switch MOSFET further includes a buried oxide film and a SOI layer formed on the mesa-shape of the LOCOS oxide film. The upper surface of the mesa-shape of the LOCOS oxide film is positioned at the same height as the upper surface of the epitaxial layer.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Abstract: A brake equipment of the driver-seat-direction changeable vehicle includes: a driver-seat-direction detector configured to detect whether the driver seat is facing the one or the other side, in the travel direction, of the wheel-side vehicle body; a braking unit configured to brake one-side wheels, which are located closer to the one side, in the travel direction, of the wheel-side vehicle body, and other-side wheels, which are located closer to the other side, in the travel direction, of the wheel-side vehicle body, while controlling brake-force distribution between brake forces of the one-side wheels and the other-side wheels in such a manner that the brake-force distribution becomes a set brake-force distribution based on ideal brake-force distribution characteristics; and a switching unit configured to change the set brake-force distribution in accordance with the direction of the driver seat detected by the driver-seat-direction detector.

Abstract: A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.

Abstract: A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

Abstract: A membrane electrode assembly includes a fuel electrode, an oxidizing agent electrode, and an electrolyte membrane provided between the fuel electrode and the oxidizing agent electrode with at least one of the fuel electrode and the oxidizing agent electrode contains a proton conductive inorganic oxide, which includes an oxide carrier containing Ti, Zr, Si and/or Al; and W, Mo, Cr and/or V oxide particles supported on a surface of the oxide carrier.

Abstract: A catalyst layer-supporting substrate includes a substrate and a catalyst layer. The catalyst layer includes a catalyst material and pores. The catalyst layer is formed on the substrate. The catalyst material has a layer or wire shape. A half-value width of a main peak of the catalyst material, as determined from X-ray diffraction spectrum of the catalyst layer, is 1.5° or more. A porosity of the catalyst layer is 30% or more.

Abstract: According to one embodiment, a catalyst layer of an electrode for a fuel cell has a proton conductive inorganic oxide containing an oxide superacid compound. The compound contains an element X (Titanium, Zirconium, Silicon, Tin, Hafnium, Germanium, Gallium, Indium, Cerium, Niobium or Aluminum) and an element Y (Tungsten, Molybdenum, Chromium, Boron or Vanadium). The catalyst layer also contains a reduction-oxidation metal catalyst or a carrier carrying a reduction-oxidation metal catalyst.

Abstract: A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

Abstract: A brake equipment of the driver-seat-direction changeable vehicle includes: a driver-seat-direction detector configured to detect whether the driver seat is facing the one or the other side, in the travel direction, of the wheel-side vehicle body; a braking unit configured to brake one-side wheels, which are located closer to the one side, in the travel direction, of the wheel-side vehicle body, and other-side wheels, which are located closer to the other side, in the travel direction, of the wheel-side vehicle body, while controlling brake-force distribution between brake forces of the one-side wheels and the other-side wheels in such a manner that the brake-force distribution becomes a set brake-force distribution based on ideal brake-force distribution characteristics; and a switching unit configured to change the set brake-force distribution in accordance with the direction of the driver seat detected by the driver-seat-direction detector.

Abstract: This invention provides an anode for a fuel cell which can realize stable output for a long period of time, and a fuel cell using the anode for a fuel cell. The anode for a fuel cell comprises an electrode catalyst layer, the electrode catalyst layer comprising a supported catalyst comprising an electroconductive carrier material and catalyst fine particles supported on the electroconductive carrier material, a proton conductive inorganic oxide, and a proton conductive organic polymer binder, the weight ratio between the supported catalyst (C) and the proton conductive inorganic oxide (SA), WSA/WC, being 0.06 to 0.38, the weight ratio between the proton conductive inorganic oxide (SA) and the proton conductive organic polymer binder (P), WP/WSA, being 0.125 to 0.5.

Abstract: A cathode for a fuel cell is provided, which includes an electrode catalyst layer. This electrode catalyst layer is constituted by a carried catalyst including a conductive carrier and catalytic fine particles carried on the conductive carrier, by a proton-conductive inorganic oxide containing an oxide carrier and oxide particles carried on a surface of the oxide carrier, and by a proton-conductive organic polymer binder. The carried catalyst is incorporated therein at a weight of WC. Silicon oxide is carried on the surface of the proton-conductive inorganic oxide at a weight ratio of 0.1-0.5 times as much as the weight of the proton-conductive inorganic oxide. The proton-conductive inorganic oxide is incorporated at a weight of WSA+SiO2. The weight ratio (WSA+SiO2/WC) is confined to 0.01-0.25. The proton-conductive organic polymer binder is incorporated at a weight of WP, the weigh ratio (WP/WSA+SiO2) is confined to 0.5-43.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor.

Abstract: The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded.

Abstract: A cleaning tape has a base tape made of a synthetic resin and a cleaning layer formed on a surface of this base tape. The cleaning layer has a binding agent and a large number of spherical particles dispersed in the binding agent in a single particle layer. Such a cleaning tape is capable of removing very small unwanted protrusions and particles on the surface of a target object such as a magnetic hard disk without forming scratches.