Abstract: A cleaning tape has a base tape made of a synthetic resin and a cleaning layer formed on a surface of this base tape. The cleaning layer has a binding agent and a large number of spherical particles dispersed in the binding agent in a single particle layer. Such a cleaning tape is capable of removing very small unwanted protrusions and particles on the surface of a target object such as a magnetic hard disk without forming scratches.

Abstract: Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Abstract: A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part.

Abstract: A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.

Abstract: A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.

Abstract: A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.

Abstract: A circular polishing pad has grooves formed on the surface in a spiral pattern with its center point offset from the center of the pad. The spiral pattern is an Archimedean spiral pattern or a parabolic spiral pattern. A target object is polished by using such a polishing pad without oscillating the platen to which the polishing pad is pasted or the polishing head that holds the target object.

Abstract: An electrolytic membrane comprising a porous membrane substrate containing a cross-linked polymer electrolyte having at least a structural component shown by following chemical formula 1: wherein A represents a repeating unit having an aromatic hydrocarbon group substituted by at least a sulfonic acid group, B represents a repeating unit having one of a nitrogen-containing hetero ring compound residue, and the sulfate, hydrochloride or organic sulfonate thereof, C represents a repeating unit having a cross-linked group, and X, Y and Z represent mol fractions of respective repeating units in the chemical formula 1, with 0.34?X?0.985, 0.005?Y?0.49, 0.01?Z?0.495 and Y?X and Z?X, provided that, in the repeating unit A, a ratio of the aromatic hydrocarbon group substituted by at least a sulfonic acid group is 0.3 to 1.0, and the number of the sulfonic acid group in the aromatic hydrocarbon group is 1 to 3.

Abstract: A proton conductive inorganic material includes oxide particles containing at least one element X selected from the group consisting of W, Mo, Cr, B and V, an oxide carrier carrying the oxide particles and containing at least one element Y selected from the group consisting of Sn, Hf, Ge, Ga, In, Ce and Nb.

Abstract: A fuel cell, which can supply stable output even at elevated temperatures and can maintain its power generation performance over a long period of time, can be realized by an electrode for a fuel cell comprising a catalyst layer formed of a catalyst composite and a binder, the catalyst composite comprising a proton-conductive inorganic oxide and an oxidation-reduction catalyst phase supported on the proton-conductive inorganic oxide, the proton-conductive inorganic oxide comprising a catalyst carrier selected from tin(Sn)-doped In2O3, fluorine(F)-doped SnO2, and antimony(Sb)-doped SnO2 and an oxide particle phase chemically bonded to the surface of the catalyst carrier.

Abstract: A lateral MOSFET according to the present invention has a trench gate structure having a cross sectional shape spreading toward an open end. The cross sectional shape is T-shape. The T-shaped cross section has a dimensional ratio of a width of a lower trench having a narrow width to a width of an upper trench having a wide width of 1:3, and a dimensional ratio of a depth of the lower trench to a depth of the upper trench of 1:1, the lower trench width having a same central axis as the upper trench width.

Abstract: A catalyst layer-supporting substrate includes a substrate and a catalyst layer. The catalyst layer includes a catalyst material and pores. The catalyst layer is formed on the substrate. The catalyst material has a layer or wire shape. A half-value width of a main peak of the catalyst material, as determined from X-ray diffraction spectrum of the catalyst layer, is 1.5° or more. A porosity of the catalyst layer is 30% or more.

Abstract: A cathode includes a diffusion layer, and a porous catalyst layer provided on the diffusion layer. The porous catalyst layer has a thickness not greater than 60 ?m, a porosity of 30 to 70% and a pore diameter distribution including a peak in a range of 20 to 200 nm of a pore diameter. A volume of pores having a diameter of 20 to 200 nm is not less than 50% of a pore volume of the porous catalyst layer. The porous catalyst layer contains a supported catalyst comprising 10 to 30% by weight of a fibrous supported catalyst and 70 to 90% by weight of a granular supported catalyst. The fibrous supported catalyst includes a carbon nanofiber having a herringbone structure or a platelet structure. The granular supported catalyst includes a carbon black having 200 to 600 mL/100 g of a dibutyl phthalate (DBP) absorption value.

Abstract: The present invention aims to provide a fuel cell anode, a membrane electrode assembly and a fuel cell, so as to obtain high electric power. The fuel cell anode has an electrode catalyst layer, and the electrode catalyst layer comprises a supported catalyst comprises electrically conductive carriers and fine catalytic particles supported thereon, a proton-conductive inorganic oxide supporting SiO2 on its surface, and a proton-conductive organic polymer binder. The SiO2 supported on the inorganic oxide prevents the oxide particles from growing, to ensure the high electric power. It is necessary to control the mixing ratios among the supported catalyst, the proton-conductive oxide and the proton-conductive binder in particular ranges.

Abstract: A cathode for a fuel cell is provided, which includes an electrode catalyst layer. This electrode catalyst layer is constituted by a carried catalyst including a conductive carrier and catalytic fine particles carried on the conductive carrier, by a proton-conductive inorganic oxide containing an oxide carrier and oxide particles carried on a surface of the oxide carrier, and by a proton-conductive organic polymer binder. The carried catalyst is incorporated therein at a weight of WC. Silicon oxide is carried on the surface of the proton-conductive inorganic oxide at a weight ratio of 0.1-0.5 times as much as the weight of the proton-conductive inorganic oxide. The proton-conductive inorganic oxide is incorporated at a weight of WSA+SiO2. The weight ratio (WSA+SiO2/WC) is confined to 0.01-0.25. The proton-conductive organic polymer binder is incorporated at a weight of WP, the weigh ratio (WP/WSA+SiO2) is confined to 0.5-43.

Abstract: A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.

Abstract: A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.

Abstract: A recovering method is provided, which includes contacting a solid component containing Ru with an aqueous solution to create a Ru compound, and causing the Ru compound to selectively elute in the aqueous solution. The aqueous solution is formed of at least one selected from the group consisting of aqueous solutions A, B, C, D, and E. The aqueous solution A comprises an acid and formic acid, alcohols, aldehydes, a compound having a hemiacetal structure or a compound having an acetal structure. The aqueous solution B comprises an acid and a compound which creates, in the coexistence thereof with the acid, formic acid, alcohols, aldehydes, a compound having a hemiacetal structure or a compound having an acetal structure. The aqueous solution C comprises an acid and sugars. The aqueous solution D comprises formic acid, and the aqueous solution E comprises oxalic acid.

Abstract: A supported catalyst includes an oxide carrier, catalyst particles supported on the oxide carrier, and catalyst layers which locate among the catalyst particles, with interface portions among the oxide carrier, the catalyst particles and the catalyst layers. The catalyst layers have a melting point lower than 1,500° C. and contain an oxide or a composite oxide which includes at least one element selected from the group consisting of Mo, W, Sn and Ru.

Abstract: A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.