Abstract: A memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack, a top electrode, and a sidewall spacer. The MTJ stack is over the bottom electrode. The top electrode is over the MTJ stack. The sidewall spacer laterally surrounds the MTJ stack and the top electrode. The sidewall spacer has an outermost sidewall laterally set back from an outermost sidewall of the bottom electrode.

Abstract: A fully automatic online aero aluminum sorting and recovery system based on LIBS (Laser Induced Breakdown Spectroscopy) technology, which belongs to the field of aero aluminum sorting and recovery technology, and is suitable for online sorting, detection and recovery of large batch of aero aluminum. The fully automatic online aero aluminum sorting system based on LIBS technology provided in the present invention consists of six portions: a sample feeding unit (1), a surface treatment unit (2), a material positioning unit (3), a LIBS analysis and detection unit (4), a transfer unit (5) and a sorting and recovery unit (6). The system according to the invention can be used to realize the automatic online detection, sorting and recovery of aero aluminum, and the system does not have requirements on the surface condition of the recovered aero aluminum samples. The sorting accuracy rate is greater than 90% and the sorting rate is not less than 1 block per second.

Abstract: A memory device includes a memory unit and a shielding element disposed on the memory unit. The memory unit includes a bottom electrode, a memory element disposed on the bottom electrode, and a top electrode disposed on the memory element. The shielding element is disposed on the memory unit to deviate an external magnetic field away from the memory element.

Abstract: Energy harvesting devices and methods are provided. An energy harvesting device includes an adsorption layer comprising a nanoporous material and at least two electrodes in operative arrangement with the adsorption layer. The nanoporous material comprises a nonbiological nanoporous material, a nonprotein biological nanoporous material, or a combination thereof. The adsorption layer and at least two electrodes are configured to generate a voltage differential on exposure of the adsorption layer to ambient moisture.

Abstract: The present disclosure presents biosensor devices, systems, and related methods. One such biosensor device comprises a substrate; a semiconductive channel member suspending between a pair of contacts on the substrate, wherein the semiconductive channel member comprises a convex protruding channel structure; and wherein the convex protruding channel structure is configured to detect both electrical and mechanical cellular responses. Other devices, systems, and methods are also presented.

Abstract: A modified silicon monoxide material is used for a negative electrode of a lithium battery, and is prepared by reacting raw materials of silicon, silicon dioxide and metal silicate under high-temperature and vacuum conditions to prepare silicon monoxide; and meanwhile, reacting the metal vapor with silicon monoxide in the preparation process to in situ form metal silicate. In the modified silicon monoxide material, the metal silicate is uniformly dispersed around the silicon and the silicon monoxide to form silicon-containing particles, and a carbon material coats the surfaces of the silicon-containing particles.

Abstract: A method of forwarding received broadcast packets by a receiving node device in a network of operatively interconnected node devices is disclosed. The received broadcast packets is broadcasted by a transmitting node device in the network. The method is performed by each receiving node device in the network and comprises the steps of: enabling a fast broadcasting mode in response to a trigger condition; adjusting a transmission power for forwarding received broadcast packets to a reduced transmission power, and forwarding, a broadcast packet received from the transmitting node device using the reduced transmission power. The method further comprises selectively forwarding a part of broadcast packets received from the transmitting node device. The method thereby reduces a number of broadcast packets transmitted simultaneously in the network, ensuring good network performance.

Abstract: A filament forming method includes: performing first stage to apply first bias including gate and drain voltages to a resistive memory unit plural times until read current reaches first saturating state, latching read current in first saturating state as saturating read current, determining whether increasing rate of saturating read current is less than first threshold value; when increasing rate of saturating read current is not less than first threshold value, performing second stage to apply second bias, by increasing gate voltage and decreasing drain voltage, to the resistive memory unit plural times until read current reaches second saturating state, latching read current in second saturating state as saturating read current and determining whether increasing rate of saturating read current is less than first threshold value; finishing the method when increasing rate of saturating read current is less than first threshold value and saturating read current reaches target current value.

Abstract: A block erase method for a flash memory is provided. The block erase method is to perform block erase on a block with a predetermined block size. The block erase method includes: performing an erase verification on bytes byte-by-byte in the block when performing the block erase; checking an erase step of the byte when the byte does not pass the erase verification; when the erase step of the byte exceeds a predetermined threshold value, performing the block erase with a partitioned block smaller than the predetermined block size, and returning to an erase verification stage to perform the erase verification; and when the erase step of the bytes does not exceed the predetermined threshold value, continuing to perform the block erase with the predetermined block size, and returning to the erasure verification stage to continue to perform the erase verification.

Abstract: A protein transfer system includes at least one base configured to receive one or more consumable protein transfer stacks and at least one lid configured to cover the base. The lid(s) comprise(s) one or more electrodes for supplying current to the one or more consumable protein transfer stacks. The protein transfer system further includes at least one voltage source configured to supply the current to the one or more consumable protein transfer stacks, one or more processors, and one or more hardware storage devices storing instructions that are executable by the one or more processors to configure the protein transfer system to control operation of the one or more voltage sources.

Abstract: An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The first sidewall spacer acts as a mask for patterning the magnetic tunnel junction. The integrated circuit die includes a second sidewalls spacer positioned on a lateral surface of the magnetic tunnel junction.

Abstract: This document describes techniques, apparatuses, and systems utilizing a high-isolation transition design for differential signal ports. A differential input transition structure includes a first layer and a second layer made of a conductive metal and a substrate positioned between the first and second layers. The second layer includes a first section that electrically connects to a single-ended signal contact point and to a first contact point of a differential signal port. The first section includes a first stub based on an input impedance of the single-ended signal contact point and a second stub based on a differential input impedance associated with the differential signal port. The second layer includes a second section that electrically connects to a second contact point of the differential signal port and to the first layer through a via housed in a pad. The second section includes a third stub associated with the differential input impedance.

Abstract: The present application provides a preparation method of a hydrogenated composite film and an optical filter, and relates to the field of optical film filter technologies. The preparation method includes: introducing inert gas and hydrogen into a reaction chamber, and bombarding at least two materials in the reaction chamber and the introduced hydrogen using plasma formed by the inert gas, such that the at least two materials are sputtered onto a substrate and react with hydrogen ions generated by the hydrogen to form a hydrogenated composite film layer. The hydrogenated composite film layer includes at least two materials which are co-sputtered onto the same substrate using the sputtering technology to obtain a required material performance, so as to obtain the hydrogenated composite film layer with a refractive index greater than 3.5 and an extinction coefficient less than 0.005 under a wavelength of 700 nm to 1800 nm.

Abstract: An active clamp flyback circuit includes: a clamp capacitor that is connected to a primary-side winding of a transformer and that is configured to absorb leakage inductance energy of the primary-side winding; an auxiliary switching transistor that is configured to control the clamp capacitor to perform reverse excitation power charging on the primary-side winding by using the auxiliary switching transistor; a first diode, where the first diode is connected in series between the clamp capacitor and the auxiliary switching transistor; and a second diode, where the second diode is connected between the first diode and the clamp capacitor , and the second diode is connected in series between the clamp capacitor and a primary-side auxiliary winding.

Abstract: An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The first sidewall spacer acts as a mask for patterning the magnetic tunnel junction. The integrated circuit die includes a second sidewalls spacer positioned on a lateral surface of the magnetic tunnel junction.

Abstract: The present invention discloses a high-voltage electric field low-temperature plasma cold sterilization system circuit and apparatus, and belongs to the field of frequency converter power source circuit technologies. The present invention including a power source module, a voltage/current/power adjustment module, a switch module, and a transformer module. The power source module includes a single-phase frequency converter and a first-stage inductance.

Abstract: This application provides an electrical element, a circuit board, and a switching power supply. The electrical element includes a first magnetic core and a second magnetic core disposed opposite to each other. The first magnetic core and the second magnetic core enclose space for accommodating a winding. The first magnetic core and the second magnetic core are further configured to bind a magnetic induction wire. The electrical element further includes a third magnetic core located in the space enclosed by the first magnetic core and the second magnetic core. The third magnetic core is configured to wind the winding. The third magnetic core is fixedly connected to the first magnetic core and the second magnetic core. An air gap is disposed in at least one of the first magnetic core and/or the second magnetic core.

Abstract: A preparation method of silicon-based composite negative electrode material for a lithium battery includes the following steps: forming steam from a raw material A containing Si and a reducing substance raw material B capable of reacting to generate a silicate under a vacuum heating condition, condensing and depositing in a deposition system after a reaction, and then carrying out carbon coating to obtain the silicon-based composite material. A certain amount of alloy is added into the raw material B, so that a proportion of a crystal region in the silicon-based composite material can be reduced, and the initial coulombic efficiency and the cycling stability of the negative electrode material are further improved.

Abstract: A memristive device includes a biomaterial comprising protein nanowires and at least two electrodes in operative arrangement with the biomaterial such that an applied voltage induces conductance switching. An artificial neuron or an artificial synapse includes a memrisitive device with the electrodes configured to apply a pulsed voltage configured to mimic an action-potential input.