Abstract: The present application provides a preparation method of a hydrogenated composite film and an optical filter, and relates to the field of optical film filter technologies. The preparation method includes: introducing inert gas and hydrogen into a reaction chamber, and bombarding at least two materials in the reaction chamber and the introduced hydrogen using plasma formed by the inert gas, such that the at least two materials are sputtered onto a substrate and react with hydrogen ions generated by the hydrogen to form a hydrogenated composite film layer. The hydrogenated composite film layer includes at least two materials which are co-sputtered onto the same substrate using the sputtering technology to obtain a required material performance, so as to obtain the hydrogenated composite film layer with a refractive index greater than 3.5 and an extinction coefficient less than 0.005 under a wavelength of 700 nm to 1800 nm.

Abstract: An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The first sidewall spacer acts as a mask for patterning the magnetic tunnel junction. The integrated circuit die includes a second sidewalls spacer positioned on a lateral surface of the magnetic tunnel junction.

Abstract: The present invention discloses a high-voltage electric field low-temperature plasma cold sterilization system circuit and apparatus, and belongs to the field of frequency converter power source circuit technologies. The present invention including a power source module, a voltage/current/power adjustment module, a switch module, and a transformer module. The power source module includes a single-phase frequency converter and a first-stage inductance.

Abstract: This application provides an electrical element, a circuit board, and a switching power supply. The electrical element includes a first magnetic core and a second magnetic core disposed opposite to each other. The first magnetic core and the second magnetic core enclose space for accommodating a winding. The first magnetic core and the second magnetic core are further configured to bind a magnetic induction wire. The electrical element further includes a third magnetic core located in the space enclosed by the first magnetic core and the second magnetic core. The third magnetic core is configured to wind the winding. The third magnetic core is fixedly connected to the first magnetic core and the second magnetic core. An air gap is disposed in at least one of the first magnetic core and/or the second magnetic core.

Abstract: A preparation method of silicon-based composite negative electrode material for a lithium battery includes the following steps: forming steam from a raw material A containing Si and a reducing substance raw material B capable of reacting to generate a silicate under a vacuum heating condition, condensing and depositing in a deposition system after a reaction, and then carrying out carbon coating to obtain the silicon-based composite material. A certain amount of alloy is added into the raw material B, so that a proportion of a crystal region in the silicon-based composite material can be reduced, and the initial coulombic efficiency and the cycling stability of the negative electrode material are further improved.

Abstract: A memristive device includes a biomaterial comprising protein nanowires and at least two electrodes in operative arrangement with the biomaterial such that an applied voltage induces conductance switching. An artificial neuron or an artificial synapse includes a memrisitive device with the electrodes configured to apply a pulsed voltage configured to mimic an action-potential input.

Abstract: This document describes techniques, apparatuses, and systems utilizing a high-isolation transition design for differential signal ports. A differential input transition structure includes a first layer and a second layer made of a conductive metal and a substrate positioned between the first and second layers. The second layer includes a first section that electrically connects to a single-ended signal contact point and to a first contact point of a differential signal port. The first section includes a first stub based on an input impedance of the single-ended signal contact point and a second stub based on a differential input impedance associated with the differential signal port. The second layer includes a second section that electrically connects to a second contact point of the differential signal port and to the first layer through a via housed in a pad. The second section includes a third stub associated with the differential input impedance.

Abstract: A method is outlined for controlling a node to a join a wireless network, which increases the speed of the wireless network commissioning procedure by reducing the chance of congestion. This is achieved by differentiating the joining time of nodes attempting to join the wireless network. Nodes indirectly communicate by transmitting beacon request messages to nodes of the wireless network, which results in the transmission of beacon messages by nodes of the wireless network. These beacon messages can be received by all nodes attempting to join the wireless network. Therefore, the beacon messages can be utilized as an indicator for nodes attempting to join the wireless network as to the number of other nodes attempting to join the wireless network. Based on this indication, the node can be controlled to wait for a further length of time, or to join the wireless network.

Abstract: A magnetic power component includes a printed circuit board and a magnetic core assembled to the printed circuit board. The magnetic core includes a magnetic core body and a plurality of heat dissipation teeth. The magnetic core body is bonded to the printed circuit board. The plurality of heat dissipation teeth is protruded from an outer surface that is of the magnetic core body and that faces away from the printed circuit board. The plurality of heat dissipation teeth and the magnetic core body are bonded through direct contact.

Abstract: The present disclosure relate to semiconductor structure that includes a substrate and a memory array. The memory array is spaced over the substrate and has a plurality of rows and a plurality of columns. Further, the memory array comprises a first memory cell and a second memory cell that are adjacent at a common elevation above the substrate. The second memory cell is at an edge of the memory array and separates the first memory cell from the edge, and a top surface of the first memory cell is recessed relative to a top surface of the second memory cell.

Abstract: A method of selectively commissioning a node device by a coordinator device in a network created by the coordinator device is disclosed. The coordinator device and the node device interact with each other to check and confirm that a coordinator temporal indication related to a commissioning start time recorded by the coordinator device and a node temporal indication related to a commissioning start time recorded by the node device are the same or temporally very similar or close to each other. Then the coordinator device will commission the node device by joining the node device into the network created by the coordinator device. The ensures that only wanted or expected node devices will be joined into the network created and managed by the coordinator device.

Abstract: This document describes techniques, apparatuses, and systems utilizing a high-isolation transition design for differential signal ports. A differential input transition structure includes a first layer and a second layer made of a conductive metal and a substrate positioned between the first and second layers. The second layer includes a first section that electrically connects to a single-ended signal contact point and to a first contact point of a differential signal port. The first section includes a first stub based on an input impedance of the single-ended signal contact point and a second stub based on a differential input impedance associated with the differential signal port. The second layer includes a second section that electrically connects to a second contact point of the differential signal port and to the first layer through a via housed in a pad. The second section includes a third stub associated with the differential input impedance.

Abstract: Provided is a biomarker for bipolar disorder, comprising Syt7 gene and/or an expression product thereof. Also provided is use of the Syt7 gene and/or the expression product thereof in the preparing a medicament for treating bipolar disorder. By monitoring the Syt7 gene and/or the expression product thereof, medicaments for treating bipolar disorder can be screened, thus providing support for diagnosis and treatment targeting Syt7 molecules.

Abstract: Aspects of the present disclosure are directed to creating interactive avatars that can be pinned as world-locked artificial reality content. Once pinned, an avatar can interact with the environment according to contextual queues and rules, without active control by the avatar owner. An interactive avatar system can configure the avatar with action rules, visual elements, and settings based on user selections. Once an avatar is configured and pinned to a location by an avatar owner, when other XR devices are at that location, a central system can provide the avatar (with its configurations) to the other XR device. This allows a user of that other XR device to discover and interact with the avatar according to the configurations established by the avatar owner.

Abstract: A method for fabricating an integrated circuit is provided. The method includes depositing an etch stop layer over an interconnect layer having a conductive feature; depositing a protective layer over the etch stop layer; depositing a first dielectric layer over the protective layer; etching a via opening in the first dielectric layer, wherein the protective layer has a higher etch resistance to etching the via opening than that of the first dielectric layer; etching a portion of the protective layer exposed by the via opening; etching a portion of the etch stop layer exposed by the via opening, such that the via opening exposes the conductive feature; forming a bottom electrode via in the via opening; and forming a memory stack over the bottom electrode via.

Abstract: A gas analyzer system (100, 200, 300) and methods of reducing sample carryover in a gas sample selector (102, 202, 302). The gas analyzer system (100, 200, 300) includes a gas chromatograph (104, 204, 304) and a gas sample selector (102, 202, 302). The gas sample selector (102, 202, 302) includes a multi-position selector valve (130, 230, 330), a flush valve (140, 240, 340), and a purge valve (150, 250, 350), as well as conduits providing flowpaths between them. When switching the flush valve (140, 240, 340) to connect the flush valve (140, 240, 340) vent and flush valve (140, 240, 340) outlet and flowing purge gas through the purge valve (150, 250, 350) port, the purge gas will flow to the selector (102, 202, 302) exit and to the flush valve (140, 240, 340) vent to remove sample gas from the flowpaths.

Abstract: A preparation method of silicon-based composite negative electrode material for a lithium battery includes the following steps: forming steam from a raw material A containing Si and a reducing substance raw material B capable of reacting to generate a silicate under a vacuum heating condition, condensing and depositing in a deposition system after a reaction, and then carrying out carbon coating to obtain the silicon-based composite material. A certain amount of alloy is added into the raw material B, so that a proportion of a crystal region in the silicon-based composite material can be reduced, and the initial coulombic efficiency and the cycling stability of the negative electrode material are further improved.

Abstract: A method for manufacturing a memory device includes forming a dielectric layer over a substrate, in which the substrate has a cell region and a logic region adjacent to the cell region. A bottom electrode, a memory layer, and a top electrode are formed in sequence over the cell region of the substrate. A first spacer is formed extending upwards from the bottom electrode. A second spacer is formed extending upwards from the dielectric layer and lining with sidewalls of the bottom electrode and the first spacer.

Abstract: The present invention relates to an automatic history matching system for an oil reservoir based on transfer learning, comprising a data reading module, a population reinitializing module, an optimization module, a simulated calculation module, a comparative judgment module and an output module, wherein the data reading module reads an optimized result of an existing oil reservoir, outputs the optimized result to the population reinitializing module, obtains an initial population of a new oil reservoir by calculation and outputs the initial population to the optimization module; the optimized result is outputted to the simulated calculation module to obtain oil reservoir production simulated data, and the oil reservoir production simulated data is outputted to the comparative judgment module; when an error between the simulated data and observed data meets the requirement, the optimized result is outputted to the output module, and the system operation is completed; and if the error does not meet the requirem

Abstract: A neural network training method includes inputting neuron input values of a neural network to the RRAM, and performing calculation for the neuron input values based on filters in the RRAM, to obtain neuron output values of the neural network, performing calculation based on kernel values of the RRAM, the neuron input values, the neuron output values, and backpropagation error values of the neural network, to obtain backpropagation update values of the neural network, comparing the backpropagation update values with a preset threshold, and when the backpropagation update values are greater than the preset threshold, updating the filters in the RRAM based on the backpropagation update values.