Abstract: Provided herein are compounds and compositions for treating, managing or preventing coronaviral related diseases. In particular, provided herein are compounds which are inhibitors of SARS-CoV-2 main protease (Mpro), pharmaceutical compositions comprising such compounds, method for synthesizing such compounds and methods of using such compounds and compositions for the treatment, management or prevention of coronaviral related diseases.

Abstract: Methods, systems, and techniques for automatically assessing credit risk of a counterparty are disclosed. A credit risk assessment method comprises: quantifying a relevance of news topics to one or more credit risk keywords; determining one or more relevant news topics that are relevant to the one or more credit risk keywords; obtaining a plurality of news articles each tagged with one or more news topics and having an associated sentiment; determining a relevant news article as a news article tagged with the one or more relevant news topics; and assessing a credit risk of a counterparty based at least in part on the sentiment of the relevant news article.

Abstract: The present application discloses a Schottky barrier diode device and a manufacturing method therefor. The Schottky barrier diode device comprises an epitaxial wafer having an epitaxial layer. The epitaxial layer comprising a first surface and a second surface that are opposite to each other, and the first surface being provided with a functional region and trench regions located on both sides of the functional region; multi-level trenches located in the trench regions, each of the multi-level trenches comprising: multiple sub-trenches, the multiple sub-trenches successively comprising a first-level sub-trench to an Nth-level sub-trench in a first direction; the width of the sub-trenches in the same multi-level trench being sequentially increased in the first direction. The side wall of at least the first-level sub-trench being provided with a side wall protection structure.

Abstract: The present disclosure provides techniques for the deployment of prognostic models into production framework. A machine learning (ML) model trained to predict condition-based aircraft maintenance is accessed. A set of configuration files for executing the ML model are generated based on one or more predefined templates, where the set of configuration files is structured in a hierarchical form based on one or more execution environments for the ML model. The ML model is deployed based on the set of configuration files. Upon determining that a runtime trigger specified in the set of configuration files is activated, input data from a client system is accessed, one or more predictions are generated by processing the input data using the deployed ML model, one or more alert criteria are determined as satisfied based on the predictions, and one or more alerts are output via one or more notification channels.

Abstract: Forces applied to the channel regions of semiconductor slabs in a first direction relative to the semiconductor slab, can create strains in the crystal structure that improve carrier mobility to improve drive strength in the channel region. In a three-dimensional (3D) FET structure, a work function metal layer is provided on opposing faces of semiconductor slabs to cause a force to be exerted on the channel regions in a first direction corresponding to current flow. The force in the first direction is either tensile force or compressive force, depending on a FET type (N or P) employing the semiconductor slab, and is provided to create strain in a crystalline structure of the semiconductor slab to improve carrier mobility in the channel region. Increasing carrier mobility in the channel regions in a 3D FET structure increases drive strength of the 3D FET, which saves area in an integrated circuit.

Abstract: A 3D dual complementary-circuit structure includes a first forksheet structure stacked on a first side of, in a first direction, a second forksheet structure to provide two complementary circuits in a space of a single forksheet structure. A dividing wall bisects at least one semiconductor slab in the first forksheet structure into a first slab portion with a first semiconductor type and a second slab portion with a second semiconductor type and also bisects at least one semiconductor slab in the second forksheet structure into a third slab portion with a third semiconductor type and a fourth slab portion with a fourth semiconductor type. One of the second semiconductor type, the third semiconductor type, and the fourth semiconductor type may be a same semiconductor type as the first semiconductor type. Two complementary metal oxide semiconductor (CMOS) circuits may be formed in the area of a single forksheet structure.

Abstract: A porous heating body includes a porous body having a first porous portion, a second porous portion and a third porous portion successively disposed in the porous body along a lengthwise direction of the porous body. A cross-sectional area of the first porous portion and a cross-sectional area of the third porous portion are both larger than a cross-sectional area of the second porous portion along a widthwise direction of the porous body. A heating element extends along the lengthwise direction of the porous body is disposed on the porous body. The heating element includes a heating portion. At least one portion of an extension length of the heating portion is overlapped with an extension length of the second porous portion. The porous body is shaped to enhance conductivity of liquid tobacco in a middle thereof, and storing liquid tobacco for replenishing at two bulge ends thereof.

Abstract: An example chip may include a substrate, an insulation layer located on a side of the substrate, and a first waveguide and a second waveguide that are in the insulation layer. The second waveguide is located on a side of the first waveguide away from the substrate. A transmission loss of the second waveguide is smaller than a transmission loss of the first waveguide. A first coupling portion of the first waveguide and a second coupling portion of the second waveguide form a first coupling structure, and the first coupling structure is configured to implement optical coupling between the first waveguide and the second waveguide.

Abstract: A first device receives information indicating changed network conditions for a network supporting a call with a second device at a first audio bit rate, and provides, to the second device, a packet instructing use of a second audio bit rate. The first device starts a timer associated with receiving an indication that the second device is using the second audio bit rate, and receives, from the second device, a response packet at the first audio bit rate. The first device determines that the timer has expired, and provides, to the second device, additional packets instructing use of the second audio bit rate. The first device determines that a threshold quantity of additional packets have been provided to the second device, and re-negotiates the second audio bit rate with the second device. The first device continues the call with the second device at the second audio bit rate.

Abstract: An antireflection film includes a plurality of convex structures formed on a light transmission surface included in an optical waveguide. A maximum radial length of a surface that is of each convex structure and that is close to the light transmission surface is less than a minimum value of a visible light wavelength. The maximum radial length of each convex structure gradually decreases in a direction away from the light transmission surface. A height of each convex structure is greater than or equal to 310 nm. A distance between geometric centers of surfaces that are of two adjacent convex structures and that are close to the light transmission surface is less than or equal to 220 nm.

Abstract: The present invention discloses a method for producing a hypereutectoid steel rail resistant to contact fatigue. The method includes performing molten iron desulphurization, converter smelting, LF refining, RH refining, continuous casting and billet heating, rolling and heat treatment after rolling to obtain a steel rail; the heat treatment after rolling includes performing accelerated cooling and air cooling on the center of a tread of a rail head, both sides of the rail head and the center of a rail bottom of the steel rail obtained after rolling, wherein the starting cooling temperature of the accelerated cooling is 650-900° C., the cooling rate is 1.0-5.0° C./s, and the final cooling temperature is 400-550° C.; and after reaching the final cooling temperature, the accelerated cooling is stopped and it is air-cooled to room temperature. The hypereutectoid steel rail has higher purity, better contact fatigue resistance and good wear resistance.

Abstract: A SiC MOSFET device and a method for manufacturing the same. The SiC MOSFET device comprises: an epitaxial wafer comprising a semiconductor substrate and epitaxial layers on a surface of the semiconductor substrate; and a well region, a source region, and a trench gate, which are in the epitaxial layers. The trench gate comprises a gate disposed in a trench at a surface of the epitaxial layers. The source region surrounds the trench. The well region comprises a first layer, a second layer, and a third layer. A bottom of the trench is disposed higher than the first layer and lower than the third layer. The third layer surrounds the trench. Doped region(s) are disposed in the epitaxial layers and beneath the trench, and the first layer surrounds each doped region. A shielding layer is disposed in a part of the epitaxial layers beneath the trench.

Abstract: A system described herein may receive, from a User Equipment (“UE”) via a first network, a request to establish a communication session. The system may determine, based on one or more attributes of the request, that the requested communication session should be established between the UE and a gateway device that is communicatively coupled to a second network. The system may establish, based on the determining, the communication session between the UE and the gateway device. The UE may output communications to the gateway device via the established communication session, and the gateway device may forward the communications received via the communication session to an Internet Protocol (“IP”) Multimedia Subsystem (“IMS”) core of the second network. In this manner, the UE connected to the first network may receive multimedia services provided by the IMS core of the second network.

Abstract: A method includes introducing a paraffin wax dispersant composition to a hydrocarbon fluid. Another method includes storing or transporting a hydrocarbon fluid in or through a vessel, wherein the hydrocarbon fluid contains the paraffin wax dispersant composition. The paraffin wax dispersant composition can include a sorbitol-based compound, a quaternary ammonium compound, monoethanolamine, and alkyl benzene sulfonic acid in excess relative to the monoethanolamine. Alternatively, the paraffin wax dispersant composition can include a sorbitol-based compound, a quaternary ammonium compound, monoethanolamine, alkyl benzene sulfonic acid, and 2-mercaptoethanol, where monoethanolamine is in excess relative to the alkyl benzene sulfonic acid. A mixture can include the hydrocarbon fluid and the paraffin wax dispersant composition.

Abstract: An atomizer and an electronic cigarette are provided. The atomizer comprises an outer housing, and an e-liquid storage chamber and an atomization assembly are disposed in the outer housing. The atomization assembly comprises a porous element and a heating element. The porous element comprises an e-liquid absorbing surface. A bubble guiding element opposite to the e-liquid absorbing surface is further provided in the outer housing, and comprises a bubble guiding surface opposite to the e-liquid absorbing surface. At least a portion of the bubble guiding surface is obliquely configured in a direction facing away from the e-liquid absorbing surface, such that bubbles emerging from the e-liquid absorbing surface of the porous element are guided toward the direction facing away from the e-liquid absorbing surface.

Abstract: In some implementations, a device may receive file location information identifying a file to be transferred to a user device associated with the first network provider. The file location information identifies a domain name associated with a second network provider. The device may provide, based on the file location information, a first request to obtain one or more first records. The one or more first records identify a first supplemental content device. The device may provide, based on the one or more first records, a second request to obtain one or more second records. The one or more second records identify a second supplemental content device. The device may obtain, based on the one or more second records, the file from the second supplemental content device, and provide the file to the user device.

Abstract: The present application discloses a silicon carbide semiconductor device and a manufacturing method therefor. An epitaxial wafer comprises a semiconductor substrate; a first epitaxial layer provided on the surface of the semiconductor substrate; al second epitaxial layer provided on the surface of the side of the first epitaxial layer facing away from the semiconductor substrate; and a third epitaxial layer provided on the surface of the side of the second epitaxial layer facing away from the first epitaxial layer. A gate is formed by means of a trench formed in the third epitaxial layer, and ion implantation can also be performed in the second epitaxial layer on the basis of the trench before the gate is formed, such that a doped region inverted with the second epitaxial layer is formed in the second epitaxial layer.