Abstract: A method of manufacturing a multilayer metal plate by electroplating includes a first forming operation of forming one of a first metal layer and a second metal layer on a substrate by electroplating, wherein the second metal layer is less recrystallized than the first metal layer, the second metal layer is comprised of nanometer-size grains, and the second metal layer has a higher level of tensile strength than the first metal layer; and a second forming operation of forming, by electroplating, a third metal layer not formed in the first forming operation on a surface of one of the first metal layer and the second metal layer formed in the first forming operation.

Abstract: The present disclosure relates to a pixel sensing circuit which extends an operation section of an integrator by using an additional signal and allows securing a time required for a stable output of a sensing voltage.

Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: A semiconductor memory device is provided which includes a sense amplifier, a bit line connected to a plurality of memory cells of a first memory block, a complementary bit line connected to a plurality of memory cells of a second memory block, a first switch configured to connect the bit line to the sense amplifier, and a second switch configured to connect the complementary bit line to the sense amplifier. The first switch is configured to electrically separate the bit line from the sense amplifier when the second memory block performs a refresh operation.

Abstract: In a method of refreshing in a memory device having a plurality of pages, a candidate refresh address corresponding to a page scheduled to be refreshed after a monitoring period is generated. Whether an active command is processed for the candidate refresh address is monitored during the monitoring period. If an active command is processed for the candidate refresh address during the monitoring period, the scheduled refresh for that page is skipped. If no active command is processed for the candidate refresh address during the monitoring period, the scheduled refresh operation is performed.

Abstract: An error correction apparatus includes an error correction circuit configured to selectively perform error correction on a portion of data that is at least one of written to and read from a plurality of memory cells of a memory device. The portion of data is at least one of written to and read from a subset of the plurality of memory cells, and the subset includes only fail cells among the plurality of memory cells. The error correction apparatus further includes a fail address storage circuit configured to store address information for the fail cells.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: A semiconductor memory device includes a memory cell array and a refresh control circuit. The refresh circuit is configured to: perform a second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation, and not perform the second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation. Whether the refresh control circuit performs or does not perform the second burst refresh operation is based on a comparison between an entering time for the self refresh operation of the memory cell rows and a reference time.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: A semiconductor memory device which stores refresh period information thereby adjusting a refresh period and a method of operating the same. The semiconductor memory device includes a cell array and a refresh information storing unit. The cell array includes one or more cell regions each having a plurality of memory cells. The refresh information storing unit is configured to store first information including a first refresh period and second information including a second refresh period in correspondence to each of the cell regions. Memory cells included in each of the cell regions are refreshed at the first refresh period according to the first information in a first refresh time band and are refreshed at the second refresh period according to the second information in a second refresh time band.

Abstract: A method of refreshing a semiconductor memory device includes performing a first refresh operation for memory cells included in a memory cell array, and determining whether a command other than a refresh command is applied to the semiconductor memory device in a refresh cycle of the first refresh operation. The method further includes continuing to perform the first refresh operation when a command other the refresh command is applied to the semiconductor memory device in one refresh cycle of the first refresh operation, and performing a second refresh operation when a command other than the refresh command is not applied to the semiconductor memory device in one refresh cycle of the first refresh operation. A refresh time of the second refresh operation is greater than a refresh time of the first refresh operation.

Abstract: A semiconductor memory device having improved refresh characteristics includes a memory array including a plurality of memory cells; a test unit configured to test refresh characteristics of the memory array and generate a first fail address signal; a storage unit configured to store the first fail address signal; and a refresh unit configured to perform a refresh operation on the memory array, wherein the refresh unit is configured to receive the first fail address signal from the storage unit, perform the refresh operation on a first memory cell that does not correspond to the first fail address signal according to a first period, and perform the refresh operation on a second memory cell that corresponds to the first fail address signal according to a second period that is shorter than the first period.

Abstract: A refresh circuit and a semiconductor memory device including the refresh circuit are disclosed. The refresh circuit includes a mode register, a refresh controller and a multiplexer circuit. The mode register generates a mode register signal having information relating to a memory bank on which a refresh operation is to be performed. The refresh controller generates a self-refresh active command and a self-refresh address based on a self-refresh command and an oscillation signal. The multiplexer circuit may include a plurality of multiplexers. Each of the multiplexers selects one of an active command and the self-refresh active command in response to bits of the mode register signal. Each of the multiplexers generates a row active signal based on the selected command, and selects one of an external address and the self-refresh address to generate a row address.

Abstract: A semiconductor memory device having an open bitline memory structure from which an edge dummy memory block is removed, the semiconductor memory device includes a memory block, an edge sense amplification block including a first sense amplifier having a first bitline, a first complementary bitline, and a first amplification circuit comprising a first transistor having a first size, a central sense amplification block including a second sense amplifier having a second bitline, a second complementary bitline, and a second amplification circuit comprising a second transistor having a second size different from the first size, a capacitor block electrically connected to the edge sense amplification block.

Abstract: A memory system includes a memory controller to control a first memory device and a second memory device. The first and second memory devices are different in terms of at least one of physical distance from the memory controller, a manner of connection to the memory controller, error correction capability, or memory supply voltage. The first and second memory devices also have different latencies.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.