Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A portable pH detector. A pH-ISFET is immersed into a solution, and the gate voltage of the pH-ISFET is detected by a signal detection unit. The level of the detected voltage is adjusted by a gain control and level shift unit and is converted by an A/D converter circuit and then output to a 8051 microcontroller to compute the pH of the solution, with the computed result displayed on a LCD.

Abstract: Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

Abstract: A method for fabricating a monolithic chip including multi-sensors that can detect pH, temperature, photo-intensity simultaneously and a readout circuit. As such, as well as the multi-sensors, the readout circuit also has a reduced chip area at low cost since selection switches are used to sequentially read pH, temperature and photo-intensity detecting values, wherein the readout action is completed within a clock cycle. The entire structure is fabricated with standard 0.5 &mgr;m CMOS IC, Double Poly Double Metal (DPDM), n-well technology and allows the integration of the on-chip signal conditioning circuitry. The chip fabricated by the method can not only sense the Ph, temperature, photo values but also apply the extended gate field effect transistor (EGFET) on the temperature and light compensation to produce realistic pH values.

Abstract: In this invention, a potentiometric electrochemical sensor and biosensor based on an uninsulated solid-state material was presented.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

Abstract: An apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract: A method of measuring the the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract: Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

Abstract: A method of measuring the hysteresis value and the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.