Abstract: A xerographic photoreceptor primarily formed by amorphous silicon material is disclosed, wherein the xerographic photoreccptor is a photosensitive drum used in copying and manufactured by the plasma enhanced low pressure chemical vapor deposition system. Such a drum has a higher resolution, and a longer lifetime. In this structure, an Al2O3 oxidization layer is grown on an aluminum substrate. Then a n type hydrogenated amorphous silicon blocking layer is grown on the aluminum substrate with Al2O3 oxidization layer. Then an intrinsic hydrogenated amorphous silicon charge generating transmission layer is grown on the n type hydrogenated amorphous silicon blocking layer. Finally a hydrogenated amorphous carbon surface protecting layer is grown on the intrinsic hydrogenated amorphous silicon charge generation transport layer for forming a xerographic photoreceptor with a multiple layer structure.

Abstract: The present invention discloses a method of forming a metal layer by thermal evaporation or RF reactive sputtering in order to fabricate a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of the ion sensitive field effect transistor with a metal thin film as a light shielding layer is SnO2/metal/SiO2 or SnO2/metal/Si3N4/SiO2, and is able to lower the effect of light successfully.

Abstract: A sensitive material-tin oxide (SnO2) obtained by thermal evaporation or by r.f. reactive sputtering is used as a high-pH-sensitive material for a Multi-Structure Ion Sensitive Field Effect Transistor. The multi-structure of this Ion Sensitive Field Effect Transistor (ISFET) includes SnO2/SiO2 gate ISFET or SnO2/Si3N4/SiO2 gate ISFET respectively, and which have high performances such as a linear pH sensitivity of approximately 56˜58 mV/pH in a concentration range between pH2 and pH10. A low drift characteristics of approximately 5 mv/day, response time is less than 0.1 second, and an isothermal point of this ISFET sensor can be obtained if the device operates with an adequate drain-source current. In addition, this invention has other advantages, such as the inexpensive fabrication system, low cost, and mass production characteristics. Based on these characteristics, a disposal sensing device can be achieved. Thus, this invention has a high feasibility in Ion Sensitive Field Effect Transistor.