Abstract: A lithium complex oxide includes a mixture of first particles of n1 (n1>40) aggregated primary particles and second particles of n2 (n2?20) aggregated primary particles, the lithium complex oxide represented by Chemical Formula 1 and having FWHM (deg., 2?) of 104 peak in XRD, defined by a hexagonal lattice having R-3m space group, in a range of Formula 1: LiaNixCoyMnzM1-x-y-zO2,??[Chemical Formula 1] where M is selected from: B, Ba, Ce, Cr, F, Mg, Al, Cr, V, Ti, Fe, Zr, Zn, Si, Y, Nb, Ga, Sn, Mo, W, P, Sr, and any combination thereof, 0.9?a?1.3, 0.6?x?1.0, 0.0?y?=0.4, 0.0?z?0.4, and 0.0?1?x?y?z?0.4, ?0.025?FWHM(104)?{0.04+(xfirst particle?0.6)×0.25}?0.025,??[Formula 1] where FWHM(104) is represented by Formula 2, FWHM(104)={(FWHMChemical Formula 1 powder(104)?0.1×mass ratio of second particles)/mass ratio of first particles}?FWHMSi powder(220).

Abstract: The present invention relates to a lithium complex oxide, and more specifically, to a lithium complex oxide of which a range of FWHM(104) values maintains a constant relationship with a molar fraction of nickel when measuring XRD defined by a hexagonal lattice having a R-3m space group. The lithium complex oxide according to the present invention exhibits an effect of improving lifetime properties of the cells including high Ni-based cathode active materials accordingly by enabling a range of the FWHM(104) values at (104) peaks defined b the hexagonal lattice having the R-3m space group to maintain a constant relationship with the molar fraction of nickel, thereby maintaining the primary particles in a predetermined size range.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery using a positive electrode containing the positive electrode active material. More particularly, the present invention relates to a positive electrode active material that is able to solve a problem of increased resistance according to an increase in Ni content by forming a charge transport channel in a lithium composite oxide and a lithium secondary battery using a positive electrode containing the positive electrode active material.

Abstract: Provided is a boil-off gas compressor for LNG-fueled vessels using LNG as fuel for a propulsion engine thereof. The boil-off gas compressor includes: compressor housings (24a, 24b) in which impellers (30a, 30b) are rotatably arranged; a motor housing (12) in which a motor (14) is disposed to drive the impellers (30a, 30b); and a bearing (18) for rotatably supporting rotation shafts (16a, 16b), which transfer rotation drive force of the motor (14) to the impellers (30a, 30b). The compressor housings (24a, 24b) may be integrally formed with the motor housing (12).

Abstract: The present invention relates to a lithium composite oxide including a coating layer having a boron-containing oxide and a lithium secondary battery including the same. More particularly, the present invention relates to a lithium composite oxide improved in lifetime and capacity characteristics by inducing a predetermined correlation between the molar ratio of nickel in a lithium composite oxide including a coating layer having a boron-containing oxide and a full width at half-maximum (FWHM; deg., 2?) of a (104) peak among XRD peaks defined by the hexagonal lattice with an R-3m space group, and a lithium secondary battery including the same.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

Abstract: Disclosed is a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: Disclosed is a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.

Abstract: The present invention relates to a lithium complex oxide, and more specifically, to a lithium complex oxide of which a range of FWHM(104) values maintains a constant relationship with a molar fraction of nickel when measuring XRD defined by a hexagonal lattice having a R-3m space group. The lithium complex oxide according to the present invention exhibits an effect of improving lifetime properties of the cells including high Ni-based cathode active materials accordingly by enabling a range of the FWHM(104) values at (104) peaks defined by the hexagonal lattice having the R-3m space group to maintain a constant relationship with the molar fraction of nickel, thereby maintaining the primary particles in a predetermined size range.

Abstract: Disclosed is a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.

Abstract: A circuit board is disclosed. In addition to insulating layers, the circuit board includes a structure for heat transfer that includes a first layer that is formed of graphite or graphene, a second layer that is formed of metallic material and disposed on one surface of the first layer, and a third layer that is formed of metallic material and disposed on the other surface of the first layer, and at least a portion of the structure for heat transfer is inserted into an insulation layer. Such a circuit board provides improved heat management. Also disclosed is a method of manufacturing the circuit board.

Abstract: This application relates to a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.