Abstract: An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.

Abstract: The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.

Abstract: Imidazopyrimidine-based compounds and organic light-emitting devices employing organic layers including the imidazopyrimidine-based compounds are provided. Organic light-emitting devices employing organic layers including the imidazopyrimidine-based compounds feature low driving voltages, high efficiency, high brightness, long lifetimes, and low power consumption.

Abstract: A light emitting diode (LED). In one embodiment, the LED comprises a base including a cavity, an LED chip disposed on a bottom of the cavity and configured to generate a first light, and a light conversion layer. The light conversion layer includes an upper substrate, a lower substrate and a wavelength conversion particle. The light conversion layer is configured to convert a portion of the first light into a second light according to light emitted by the wavelength conversion particle. Furthermore, the light conversion layer is disposed on an upper surface of the base.

Abstract: A light-emitting unit for emitting light includes a light-emitting element and a light-converting layer. The light-converting layer includes a nanoparticle and an additive having an oxidation speed faster than an oxidation speed of the nanoparticle. The light-converting layer is disposed on the light-emitting element to increase the durability of the light-emitting unit.

Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.

Abstract: Provided are a display device, which has a longer life and can be fabricated simply relative to conventional display devices, and a method of fabricating the display device. The display device includes a substrate which includes first through third subpixel regions, first through third organic light-emitting transistors which are disposed in the first through third subpixel regions, respectively, and are operable to emit light of a first color, and a first fluorescent pattern which is formed on the first organic light-emitting transistor and is operable to cause light of a second color to be emitted.

Abstract: A triazine-based compound having three biphenyl groups, represented by Structure 1, below, wherein R1 through R18 are each independently one of: hydrogen, a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group, and at least one of R1, R2, R7, R8, R13 and R14 is one of: a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group.

Abstract: A lamp according to one or more embodiments includes a tube which forms a light-emitting space, an electrode main body which is disposed in the tube, and an emitter surface metal layer which includes an alkali metal oxide and/or an alkaline earth metal oxide, and covers the electrode main body. The emitter surface metal layer may include cesium (Cs) and may further include at least one selected from the group consisting of beryllium oxide (BeO), magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), cesium oxide (CsO) and radium oxide (RaO). Therefore, discharge may be easily activated because of a high secondary electron emission coefficient. Thus, a light-emitting efficiency may be enhanced and dark start characteristics may be improved.

Abstract: In a method for manufacturing a nanoparticle, a precursor (e.g., transition metal complex) mixed with polyethylene glycol (PEG) is thermally decomposed. A nanoparticle is formed from the thermal decomposition. PEG is cost effective and less toxic than chemicals that are conventionally used for nanoparticle production, so that costs for manufacturing the nanoparticle may be decreased. Further, PEG may be reused to produce more nanoparticles.

Abstract: A light emitting diode (LED). In one embodiment, the LED comprises a base including a cavity, an LED chip disposed on a bottom of the cavity and configured to generate a first light, and a light conversion layer. The light conversion layer includes an upper substrate, a lower substrate and a wavelength conversion particle. The light conversion layer is configured to convert a portion of the first light into a second light according to light emitted by the wavelength conversion particle. Furthermore, the light conversion layer is disposed on an upper surface of the base.

Abstract: A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.

Abstract: A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.

Abstract: Imidazopyridine-based compounds and organic light emitting diodes (OLEDs) including organic layers including the imidazopyridine-based compounds are provided. The organic light emitting diodes including organic layers having the imidazopyridine-based compounds have low driving voltages, high efficiencies, high luminance, long life-times and low power consumption.

Abstract: A triarylamine-based compound of formula 1, a method of preparing the same, and an organic light emitting device including the triarylamine-based compound of formula 1: where Ar1 through Ar4 are independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C2-C30 heterocyclic group; R is a halogen atom, a cyano group, a substituted or unsubstituted C1-C30 alkyl group; n is an integer of 1 through 3; and m is an integer of 1 through 3. The triarylamine-based compound of formula 1 has excellent electrical properties and a great charge transporting capability. An organic light emitting device including an organic layer formed of the triarylamine-based compound has high efficiency, low operating voltage, great luminance, and long lifetime.

Abstract: A thin film transistor array panel includes a substrate, a gate line disposed on the substrate and having a gate electrode, a gate insulating layer disposed on the gate line, a data line disposed on the gate insulating layer and crossing the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor layer connected to the source and drain electrodes to form a channel, a light blocking layer disposed on the semiconductor layer to block light incident to the semiconductor layer, and a pixel electrode contacting the drain electrode.

Abstract: In an organic thin film transistor (TFT) substrate, the organic TFT substrate includes gate lines, data lines, a gate electrode, a source electrode, a drain electrode, a gate insulating layer, an organic semiconductor layer, and an organic protective layer. The gate and data lines are insulated from each other and cross each other to define pixel areas. The gate electrode is connected to the gate line. The source electrode is connected to the data line. The drain electrode faces the source electrode with the gate electrode disposed therebetween. The gate insulating layer covers the gate electrode and exposes a portion of the source and drain electrodes. The organic semiconductor layer contacts the source and drain electrodes. The organic protective layer is disposed on the organic semiconductor layer to protect the organic semiconductor layer.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.

Abstract: A composition for producing an organic insulator is provided which comprises an organic-inorganic hybrid material (as defined). The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material displays a high dielectric constant and a high degree of crosslinking. Based on these advantages, the composition comprising the organic-inorganic hybrid material can be utilized during the fabrication of various electronic devices by a wet process. A method for producing the organic insulator while utilizing the composition also is provided, as well as the resulting organic insulator, and an organic thin film transistor which incorporates the resulting insulating layer.