Abstract: The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.

Abstract: A difluoropyridine-based compound includes at least one difluoropyridine group in its molecule. The difluoropyridine-based compound may be used as an electron injection material, an electron transport material, or a hole blocking material in full-color fluorescent or phosphorescent devices. The difluoropyridine-based compound has good electrical characteristics and a high charge transport capability. The difluoropyridine-based compound may be used to produce an organic electroluminescent device with high efficiency, low voltage, improved brightness, and a long life expectancy.

Abstract: A thin film transistor substrate includes a gate line arranged on a substrate, a data line arranged to cross the gate line, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer forming a channel between the source electrode and the drain electrode, a pixel electrode connected to the drain electrode, and an organic passivation layer to protect the organic semiconductor layer and to receive a white light and transmit a colored light.

Abstract: An organic-inorganic metal hybrid material and a composition for producing an organic insulator comprising the hybrid material. The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material has a high dielectric constant and a high degree of crosslinking. Based on these advantages, the hybrid material or the composition can be applied to the fabrication of various electronic devices by a wet process.

Abstract: Provided are a heteroaromatic cycle-containing compound used for an organic light emitting diode, represented by Formula 1: wherein X is N or C; Ar1 is a phenyl group, a C6-C20 aryl group, a C7-C20 arylalkyl group, a C7-C20 arylalkoxy group, a C6-C20 arylamino group, a C6-C20 heteroarylamino group, or a C2-C20 hetero ring group; and Ar2, Ar3 and Ar4 are each independently hydrogen, a cyano group, a hydroxyl group, a nitro group, halogen, phenyl, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C6-C20 aryl group, a C7-C20 arylalkyl group, a C2-C20 alkylalkoxy group, a C7-C20 arylalkoxy group, a C6-C20 arylamino group, a C1-C20 alkylamino group, a C6-C20 heteroarylamino group, or a C2-C20 hetero ring group, wherein, when X is N, Ar4 is a lone electron pair, and when X is C, Ar3 and Ar4 are alternatively bound together to form a carbon ring.

Abstract: An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: An organometallic complex for an organic light emitting device represented by formula 1, a method of preparing the same and an organic light emitting device including the same: where R1 through R16 are a hydrogen atom, a cyano group, a hydroxyl group, a nitro group, a halogen atom, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C6-C20 aryl group, a C7-C20 arylalkyl group, a C2-C20 alkylalkoxy group, a C7-C20 arylalkoxy group, a C6-C20 arylamino group, a C1-C20 alkylamino group, a C6-C20 heteroarylamino group, and a C2-C20 hetero-ring group; and M is a bivalent metal such as Be, Mg, Zn, Ca, Cr, Fe, Co, Ni and Cu. The compound represented by Formula 1 can be effectively used in an electron transport layer or an electron injection layer. An organic light emitting device including the compound represented by Formula 1 can thus have long lifetime.

Abstract: An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode.

Abstract: Imidazopyrimidine-based compounds and organic light-emitting devices employing organic layers including the imidazopyrimidine-based compounds are provided. Organic light-emitting devices employing organic layers including the imidazopyrimidine-based compounds feature low driving voltages, high efficiency, high brightness, long lifetimes, and low power consumption.

Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

Abstract: Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.

Abstract: An organometallic complex for a light emitting layer includes a heterocyclic ligand and a bivalent metal bonded to the heterocyclic ligand, wherein the heterocyclic ligand includes a plurality of linked ring structures that include a total of at least 17 carbon atoms and 1 heteroatom, and the linked ring structures have substantially parallel planes.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.

Abstract: Imidazopyridine-based compounds and organic light emitting diodes (OLEDs) including organic layers including the imidazopyridine-based compounds are provided. The organic light emitting diodes including organic layers having the imidazopyridine-based compounds have low driving voltages, high efficiencies, high luminance, long life-times and low power consumption.

Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

Abstract: An elecotrophoretic display device includes a first substrate, a gate line formed on the first substrate, a data line crossing the gate line to form a defined area, a source electrode connected to the data line, a drain electrode facing the source electrode to define a channel area, a color filter formed on the first substrate, a first electrode formed on the color filter, the first electrode electrically connected to the drain electrode, a second substrate facing the first substrate, a second electrode formed on the second substrate and a fluid and a plurality of charged particles interposed between the first electrode and the second electrode.

Abstract: A method for manufacturing a thin film transistor (“TFT”) array panel includes forming a gate electrode, forming source and drain electrodes insulated from the gate electrode, forming an organic semiconductor contacting the source and drain electrodes, spraying a solvent on the organic semiconductor, drying the solvent at room temperature, and annealing the organic semiconductor.

Abstract: A thin film transistor array panel according to an embodiment of the present invention includes a gate electrode, a source electrode and a drain electrode opposing each other and separated from each other on the gate electrode. An organic semiconductor is in contact with the source electrode and the drain electrode. A gate insulator is formed between the gate electrode and the organic semiconductor. A pixel electrode is connected to the drain electrode. A passivation member covers the organic semiconductor and includes a nonionic soluble polymer.