Abstract: Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as AlxGa1-xN and InxGa1-xN. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.

Abstract: A two-dimensional round-robin scheduling method with multiple selection is provided. The two-dimensional round-robin scheduling method in accordance with an embodiment of the present invention includes following steps. First step is for checking whether a request is received from the input buffer module and building mxm request matrix r(i,j), i,j=1, . . . , m. Second step is for setting mxm search pattern matrix, d(i,j), i,j=1, . . . , m. The search pattern matrix describes search sequence, S=1, . . . , m. Third step is for initializing elements of mxm allocation matrix a(i,j), i,j=1, . . . , m. The allocation matrix contains information whether transmission request is accepted and which switching plane the accepted request uses in transmission. Fourth step is for examining a request matrix in accordance with the search sequence S and finding r(i,j) that sent a request.

Abstract: A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band includes an &agr;-Al2O3 single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 &mgr;m on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band includes the following steps. An &agr;-Al2O3 single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 &mgr;m on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.

Abstract: A matrix-type display device having a repair layout, particularly, a matrix-type display device which can be repaired in a pixel unit, is provided. Two or more of signal lines such as scanning signal lines, displaying signal lines and auxiliary signal lines and a pixel electrode are overlapped via an insulating layer, so that a defect such as the disconnection of the displaying signal lines and scanning signal lines, the short of the pixel electrode and signal line, and the loss of electrode of a switching element, can be repaired. Here, the layout of the auxiliary gate line and dual gate line can be modified.

Abstract: Disclosed is a gate signal delay compensating LCD that comprises an LCD panel including a plurality of gate lines, a plurality of data lines insulated from and crossing the gate lines, a plurality of TFT each of which having a gate electrode connected to the gate line and a source electrode connected to the data line, a pixel electrode connected to a drain electrode of the TFT and a common electrode facing the pixel electrode, liquid crystal filled between the pixel electrode and the common electrode, and a signal delay compensator connected to ends of the gate lines to compensate for the gate signal delay; a gate driver for supplying a gate signal for turning on and off the TFT to the gate line so as to drive the LCD panel; a data driver for supplying a data voltage that represents an image signal to the data line so as to drive the LCD panel; and a signal controller connected to a signal source, the gate driver and the data driver, and processing the image signal provided by the signal source to enable the

Abstract: A matrix-type display device having a repair layout, particularly, a matrix-type display device which can be repaired in a pixel unit, is provided. Two or more of signal lines such as scanning signal lines, displaying signal lines and auxiliary signal lines and a pixel electrode are overlapped via an insulating layer, so that a defect such as the disconnection of the displaying signal lines and scanning signal lines, the short of the pixel electrode and signal line, and the loss of electrode of a switching element, can be repaired Here, the layout of the auxiliary gate line and dual gate line can be modified.

Abstract: A method for scheduling an input and output buffered ATM or packet switch and, more particularly, to a method for cell-scheduling an input and output buffered switch that is adapted to a high-speed large switch is provided. The input and output buffered switch has multiple switching planes, and its structure is used to compensated for decreasing performance of the input buffered switch resulting from HOL (head-of-line) blocking of the input buffered switch. The input and output buffered switch consists of input buffer modules grouping several input ports and output ports and output buffer modules, and each input buffer module has several FIFO queues for the associated module output buffer modules. In the input and output buffered switch having multiple switching planes, cell scheduling is carried out using a simple iterative matching (SIM) method.

Abstract: A matrix-type display device having a repair layout, particularly, a matrix-type display device which can be repaired in a pixel unit, is provided. Two or more of signal lines such as scanning signal lines, displaying signal lines and auxiliary signal lines and a pixel electrode are overlapped via an insulating layer, so that a defect such as the disconnection of the displaying signal lines and scanning signal lines, the short of the pixel electrode and signal line, and the loss of electrode of a switching element, can be repaired. Here, the layout of the auxiliary gate line and dual gate line can be modified.

Abstract: Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as AlxGa1-xN and InxGa1-xN. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.

Abstract: A distributed type input buffer switch system includes at least one input data processing unit matched to an input port for storing and managing input data by target output ports, requesting arbitration for switching, and storing and managing information on an arbitration-requested data; an arbitration unit for managing an arbitration request signal received from the input data processing unit according to the input data processing unit and the target output port and performing arbitration according to an arbitration request; and a switching unit for receiving data from the input data processing unit and transmitting the same to the output ports by performing switching according to a command from the arbitration unit.

Abstract: A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed.

Abstract: A liquid crystal display device that comprises a thin film transistor array panel including a voltage transfer circuit that includes a pad region for receiving a common voltage, a short region for transferring the common voltage, and a center region that connects the pad region to the short region. The center region includes a composite conductive layer comprising a first electrically conductive layer of a first resistance and a second electrically conductive layer of a second resistance, wherein the first resistance is less than the second resistance. The first electrically conductive layer of the composite conductive layer preferably comprises a material of relatively low resistance, such as aluminum or an aluminum alloy. In addition, the first electrically conductive layer may include an anodic oxide layer for inhibiting hillock formations.

Abstract: A matrix-type display capable of being repaired by pixel unit, Two or more of signal lines such as scanning lines, image signal lines and auxiliary signal lines and a pixel electrode are overlapped via an insulating layer, so that a defect such as the disconnection of the image signal lines and scanning lines, the short of the pixel electrode and the signal line, and the loss of electrode of a switching element, and a pixel defect can be repaired. Here, the layout of the auxiliary gate line and dual gate line can be modified.

Abstract: A microwave oven has a 2-level simultaneous cooking function wherein different foods can be simultaneously cooked at different levels in the cooking chamber. The oven includes a display, and a memory in which a list of menus is stored. Each menu represents a pre-established combination of different foods capable of 2-level simultaneous cooking. A user actuates a menu-selecting key, whereby a different menu is displayed per each actuation of the menu selecting key. By then actuating a cooking-start key, the 2-level cooking conditions associated with the food combination of the currently displayed menu are carried out.

Abstract: A substrate for a microelectronic device is divided into at least two regions and a boundary region therebetween. The boundary region includes a first portion and a second portion. The boundary region may have subregions having equal area, and the sub-regions are arranged in a matrix shape to form the first portion and the second portion A photoresist is coated on the substrate. Portions of the photoresist on the first region and the first portion is exposed to light through a mask for photolithography, and other portions of the photoresist on the second region and the second portion is then exposed to light through the mask. The area of the sub-regions of the first portion in a column becomes larger as goes to the first region, while that of the second portion becomes smaller.

Abstract: A microwave oven comprises a main body, a cooking chamber and an electrical component compartment. The electrical component compartment contains a fuse housing which is mounted on a bracket to hold a fuse. Plastic coupling members are integrally mounted onto the fuse housing bracket, into which a fuse is inserted. Each coupling member includes a guide projecting integrally upwardly from the bracket. Both sides of the fuse housing contact respective ones of the guides. A protruding portion on the top of each guide forms a cam surface for spreading the guides apart, and a stop surface for preventing upward dislodgement of the fuse housing.

Abstract: A microwave oven is disclosed, in which the edges of the opening between the cooking chamber and electrical component compartment are bent, thereby strengthening the side panel on which the opening is formed and also forming half of a joining means which connects a cover plate to the opening. The cover plate includes hooked catches(the other half of the joining means) and flexible sealing members that lie flush against the side panel when the cover plate is installed. The elasticity of these sealing members allows them to maintain a tight seal even if the shape of the side panel becomes distorted during the assembly of the microwave.

Abstract: Methods of manufacturing liquid crystal display devices with reduced susceptibility to electrostatic discharge faults include delaying the removal of an electrostatic shorting bar from a liquid crystal display substrate until after a display driver has been electrically coupled to the control lines (e.g., data and gate lines) on the display substrate. Thus, in contrast to the prior art, electrostatic discharge faults can also be prevented during the step of electrically coupling display drivers to the display substrate. A preferred method includes the steps of forming a first substrate comprising a thin-film transistor display region, a plurality of data and gate lines coupled to the display region and an electrostatic shorting bar electrically interconnecting the data and gate lines together, and then electrically connecting a second substrate (e.g.

Abstract: A semiconductor substrate and a method of fabricating the same, and provides which the active area to be formed the active element is defined by the trench filled with any conductive polycrystal silicon in which any portion of a large number of the epitaxial layer is crystally grown on any conductive silicon substrate, and the multi-aperture silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield.