Abstract: Provided are an anode for electrolysis, which includes a metal base, and a catalyst layer disposed on at least one surface of the metal base, wherein the catalyst layer includes a composite metal oxide of ruthenium, iridium, titanium, and platinum, and a metal in the composite metal oxide does not include palladium, wherein, when the catalyst layer is equally divided into a plurality of pixels, a standard deviation of iridium compositions of the plurality of equally divided pixels is 0.40 or less, and a method of preparing the same.

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

Abstract: A display device includes a base substrate, an organic layer on the base substrate and including a pattern region having an uneven pattern formed thereon, and a non-pattern region having a substantially flat surface, a light-emitting element on the organic layer, and a color conversion pattern on the light-emitting element and overlapping the pattern region and the non-pattern region.

Abstract: The present invention relates to a method of purifying waste hydrochloric acid, and more particularly, to a method of purifying waste hydrochloric acid which includes preparing an extraction solution by dissolving an extractant in an organic solvent (S1), extracting metallic components with the organic solvent by adding the extraction solution to the waste hydrochloric acid (S2), separating a waste hydrochloric acid layer and the organic solvent containing the metallic components (S3), and obtaining purified hydrochloric acid by recovering the separated (fractionated) waste hydrochloric acid layer (S4), wherein the extractant is used in an amount of 40 moles or more based on 1 mole of iron (Fe) included in the waste hydrochloric acid, and the waste hydrochloric acid and the extraction solution are mixed in a volume ratio of 1:0.1 to 1:1.

Abstract: The disclosure relates to a container including a spinning formulation structure, the container including a rotating unit including a central axis having a bar shape and a first gear coupled to the central axis and rotating together with the central axis; a plurality of formulation structures coupled to the rotating unit; a housing having a storage space through which the plurality of formulation structures are inserted, the storage space being open toward the outside and a second gear being formed along an inner peripheral surface of the storage space; and a controller being inserted in one side and another side of the central axis and located on an upper portion of the housing to be rotatable along the inner peripheral surface of the housing, wherein, when the controller is located on the upper portion of the housing, the first gear is engaged with the second gear.

Abstract: An apparatus and a method for managing computing resources are disclosed. The apparatus for managing computing resources includes a task input interface configured to receive a plurality of processing-target tasks; a task processor configured to sequentially process the plurality of received processing-target tasks; and a duplicate device manager configured to generate one or more duplicate devices by duplicating the apparatus for managing computing resources based on at least one among a ratio of a number of unprocessed tasks to a number of processing-target tasks and the number of unprocessed tasks, and assign unprocessed tasks to the one or more generated duplicate devices.

Abstract: Provided is an anode for electrolysis having reduced overvoltage and improved lifetime while exhibiting high efficiency, and a method of preparing the same. Because the anode for electrolysis is prepared by electrostatic spray deposition, an active material can be uniformly distributed in a catalyst layer, and thus, an overvoltage can be reduced and lifetime can be improved while exhibiting high efficiency.

Abstract: A display device includes: a first base substrate which comprises a plurality of pixels; a pixel electrode on the first base substrate in each of the pixels and comprises a reflective film; an organic layer on the pixel electrode; and a common electrode on the organic layer, wherein the pixel electrode has a reflectance of 80% or more for light in a first wavelength range of 420 nm to 470 nm.

Abstract: Disclosed herein is an electric double layer device including a urethane potting unit (50) for filling the gap between a portion of a first terminal (21) that is exposed out of a rubber cap (40) and a first through hole (41) and the gap between a portion of a second terminal (22) that is exposed out of the rubber cap and a second through hole (42), wherein an aluminum terminal (A) constituting each of the first terminal (21) and the second terminal (22) is anodized such that an aluminum oxide film (Al) is formed on the aluminum terminal, whereby the lifespan of the electric double layer device is relatively increased.

Abstract: A semiconductor chip including an alignment patter is provided. The semiconductor ship includes a substrate associated with a main chip region of a semiconductor wafer and including a scribe lane. A lower interlayer insulating layer is disposed on the substrate, a low-K layer including dummy metal patterns is disposed on the lower interlayer insulating layer, an alignment pattern is disposed on the low-K layer, and a passivation layer covers the alignment pattern.

Abstract: A semiconductor chip includes a substrate including: a main chip region; and a scribe lane surrounding the main chip region; a lower interlayer insulating layer disposed on the substrate in the scribe lane; a circuit structure disposed on the lower interlayer insulating layer in the scribe lane; and a pad structure disposed on the lower interlayer insulating layer. The circuit structure and the pad structure are disposed to be spaced apart from each other in a longitudinal direction of the scribe lane.

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate which includes a semiconductor chip region and a scribe line region surrounding the semiconductor chip region; an insulating film arranged over the semiconductor chip region and the scribe line region on the substrate, and including a first surface, a second surface opposite to the first surface, a third surface connecting the first surface and the second surface, and a fourth surface opposite to the third surface and connecting the first surface and the second surface; and an opening portion formed on the second surface of the insulating film and the fourth surface of the insulating film to expose the substrate, wherein the opening portion is formed in the scribe line region, and the first surface of the insulating film and the third surface of the insulating film do not include an opening portion which expose the substrate.

Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

Abstract: Disclosed is a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.

Abstract: A color conversion element includes a base substrate, and a first color filter layer, a second color conversion layer, and a third color conversion layer disposed on the base substrate, wherein the first color filter layer, the second color conversion layer, and the third color conversion layer are sequentially arranged on a plane, and wherein an interval between the first color filter layer and the second color conversion layer or an interval between the first color filter layer and the third color conversion layer is different from an interval between the second color conversion layer and the third color conversion layer.

Abstract: Disclosed is a capacitor that is not easily degraded to stably maintain the performance for a long time. The electrochemical capacitor includes a first electrode provided in a rolled sheet form and having active material layers coated on both surfaces thereof; a second electrode provided in a rolled sheet form at an outer side of the first electrode to face the first electrode and having active material layers coated on both surfaces thereof; and a separator interposed and rolled between the first electrode and the second electrode, wherein at least a portion of an outermost layer of the first electrode is exposed to the outside.

Abstract: Disclosed is a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.

Abstract: A color conversion element includes a base substrate, and a first color filter layer, a second color conversion layer, and a third color conversion layer disposed on the base substrate, wherein the first color filter layer, the second color conversion layer, and the third color conversion layer are sequentially arranged on a plane, and wherein an interval between the first color filter layer and the second color conversion layer or an interval between the first color filter layer and the third color conversion layer is different from an interval between the second color conversion layer and the third color conversion layer.

Abstract: Disclosed is a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.