Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.

Abstract: A type of electrical connector that replaces the use of a conductive wire with a circuit board for transmitting signals to allow the conductive component of the electrical connector to transmit signals without relying on the conductive wire, addressing the known issue of difficulties in securely positioning the conductive component relative to the conductive wire during the electrical connector manufacturing. This innovation enables automated production of the electrical connector, consequently reducing production costs of the electrical connector.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A manufacturing method of a tiling electronic device includes the following steps. A first electronic panel is provided. The first electronic panel includes multiple first bumps and multiple first conducting lines, and the first bumps and the first conducting lines are disposed on a side surface of the first electronic panel. A second electronic panel is provided. The second electronic panel includes multiple second bumps and multiple second conducting lines, and the second bumps and the second conducting lines are disposed on a side surface of the second electronic panel. The first electronic panel and the second electronic panel are coupled through the first bumps and the second bumps. Multiple conducting elements are formed, so that the first conducting lines are electrically connected with the second conducting lines through the conducting elements after the first electronic panel and the second electronic panel are coupled.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: A system includes a rack of servers and a fluid circuit for cooling the rack of servers. The fluid circuit includes one or more cooling modules, a heat-exchanging module, and a pump. The one or more cooling modules are thermally connected to a conduit for flowing a coolant therethrough. Each cooling module includes a heat-exchanger thermally connected to the conduit and a chiller fluidly coupled to the heat-exchanger. The heat-exchanging module is fluidly connected to an outlet of the conduit. The pump is configured to drive the coolant from the heat-exchanging module to each server in the rack of servers.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: Disclosed herein are system, method, and computer program product embodiments for reducing GPU load by programmatically controlling shading rates in computer graphics. GPU load may be reduced by applying different shading rates to different screen regions. By reading the depth buffer of previous frames and performing image processing, thresholds may be calculated that control the shading rates. The approach may be run on any platform that supports VRS hardware and primitive- or image-based VRS. The approach may be applied on a graphics driver installed on a client device, in a firmware layer between hardware and a driver, in a software layer between a driver and an application, or in hardware on the client device. The approach is flexible and adaptable and calculates and sets the variable rate shading based on the graphics generated by an application without requiring the application developer to manually set variable rate shading.

Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.

Abstract: A fan guard for a fan container includes a housing and a plurality of wings. The housing has a hollow interior defined by a cylindrical inner surface. The housing extends longitudinally between a first housing end and a second housing end. The plurality of wings is positioned within the hollow interior of the housing. Each wing of the plurality of wings extends radially, from a center of symmetry of the cylindrical inner surface to the cylindrical inner surface. Each wing of the plurality of wings is radially curved between the first housing end and the second housing end.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: A method for performing network control in a wireless communications system and associated apparatus are provided. The method may include: carrying a set of link information in a preamble of a first data transmission frame transmitted from the first network device to a second network device, wherein the set of link information may include at least one indication among the following indications: a destination device indication, a device assignment indication and a transmission power control indication; wherein a third network device is arranged to monitor wireless transmission in the wireless communications system to obtain the set of link information from the first data transmission frame, and determine spatial reuse (SR) transmission availability of the third network device based on the set of link information.