Abstract: A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

Abstract: A semiconductor device may include a gate insulating layer on a semiconductor substrate, a polysilicon layer doped with impurities on the gate insulating layer, an interface reaction preventing layer on the polysilicon layer, a barrier layer on the interface reaction preventing layer, and a conductive metal layer on the barrier layer. The interface reaction preventing layer may reduce or prevent the occurrence of a chemical interfacial reaction with the barrier layer, and the barrier layer may reduce or prevent the diffusion of impurities doped to the polysilicon layer. The interface reaction preventing layer may include a metal-rich metal silicide having a metal mole fraction greater than a silicon mole fraction, so that the interface reaction preventing layer may reduce or prevent the dissociation of the barrier layer at higher temperatures. Thus, a barrier characteristic of a poly-metal gate electrode may be improved and surface agglomerations may be reduced or prevented.

Abstract: A method of processing a wafer in a chamber including a wafer stage and a showerhead is disclosed. The method includes forming a first protection layer on the wafer stage, heating the wafer stage to a first temperature, heating the showerhead at a second temperature lower than the first temperature, forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead, loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage, and removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead.

Abstract: A conductive structure is formed in an integrated circuit device by forming a lower conductive pattern on a substrate. A barrier metal layer is formed on the lower conductive pattern. The barrier metal layer is flushed with a gas that includes a halogen group gas and an upper conductive layer is formed on the barrier metal layer.

Abstract: In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.

Abstract: A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the semiconductor substrate therein and for forming an upper metal layer thereon. A transfer chamber is connected to the first processing chamber and the second processing chamber. The transfer chamber is configured to transfer the semiconductor substrate between the first processing chamber and the second processing chamber.

Abstract: A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.

Abstract: A source gas-supplying unit may include a chamber for receiving a liquid source. A first pipe may extend into the chamber to dip into the liquid source. The first pipe may provide a carrier gas to bubble through the liquid source to generate a vapor source. A second pipe may be connected to the chamber. The vapor source and the carrier gas may be supplied by the second pipe to a process chamber in which a semiconductor-manufacturing process may be carried out. A blocking structure may be provided in the sealed chamber. The blocking structure may block the liquid source that may be splashed toward the second pipe due to the bubbling.

Abstract: Chamber inserts and apparatuses for processing a substrate. In an example, the chamber insert may include a cylindrical body portion including an open top end portion and an open bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including an open top end portion and an open bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion.

Abstract: In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process.

Abstract: A chemical vapor deposition apparatus has a showerhead, and temperature control apparatus including a heater and a heat dissipation plate for regulating the temperature of the showerhead. The showerhead includes a bottom plate having gas spray openings, and an upper plate. The heater is disposed on an upper plate of the showerhead. The heat dissipation plate contacts an upper portion of the upper plate of the showerhead above the heater so that heat dissipates from the showerhead through the plate. The temperature control apparatus also includes a coolant system by which coolant is fed into a space defined between the heater and the heat dissipation plate. The temperature of the showerhead is precisely controlled using the heater, the heat dissipation plate and the coolant system.

Abstract: In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.

Abstract: In an apparatus for forming a layer, the apparatus includes a processing chamber, a chuck, a gas-supplying unit, and a pipe unit. The chuck for supporting a substrate is disposed in the processing chamber. The gas-supplying unit supplies a source gas for forming a layer on the substrate and a purge gas for purging the inside of the processing chamber to the processing chamber. The pipe unit transfers the source gas and the purge gas to the processing chamber at a temperature that falls between the temperature of condensation and a reaction temperature for the source gas so that condensation or deposition reaction does not occur until the source gas enters the processing chamber. A heater located outside of the chamber heats the purge gas that is supplied to the processing chamber to a predetermined temperature.

Abstract: The present invention is directed to a plasma process chamber capable of maintaining a high vacuum in the idle state. The present invention maintains a high vacuum in the idle state and prevents a contamination of the wafer transferred into the process chamber.

Abstract: An atomic layer deposition (ALD) thin film deposition apparatus is provided. The atomic layer deposition (ALD) thin film deposition apparatus comprises a reactor including a support on which at least one substrate is placed and a member from which gases are sprayed, a first reaction gas supply line which is coupled with a first reaction gas supply portion which allows a first reaction gas to flow from the first reaction gas supply portion to the reactor, a second reaction gas supply line which is coupled with a second reaction gas supply portion which allows a second reaction gas to flow from the second reaction gas supply portion to the reactor for reacting with the first reaction gas, a purge gas supply line which is coupled with a purge gas supply portion and allows a purge gas to flow from the purge gas supply portion to the reactor for conducting a purge step, and an exhaust line which exhausts a gas from within the reactor to a location outside the reactor.

Abstract: The method of forming a TiN thin film using an atomic layer deposition (ALD) method includes thermally decomposing TiCl4; introducing a pyrolyzed product of the TiCl4 into the chamber; supplying a first purge gas into the chamber; supplying a reactant gas into the chamber, thereby forming a TiN thin film; and supplying a second purge gas into the chamber. The apparatus of forming a TiN thin film includes a gas conduit having an entrance line into which a source gas, TiCl4 is introduced; a heater installed around the gas conduit and thermally decomposing the introduced source gas, TiCl4, in advance to make a secondary source gas; and a chamber being connected to the gas conduit and having a reaction room in which the TiN thin film is formed by the reaction of the secondary source gas and NH3 as a reactant gas. Therefore, a TiN thin film growth rate can be improved.

Abstract: A chemical vapor deposition apparatus and method are provided. The apparatus includes a heater disposed on a bottom of a process chamber for heating a wafer laid on the heater. A shower head is disposed above the heater for injecting a reaction gas. The apparatus comprises a shutter chamber provided at an outer side of the process chamber. A transfer robot is installed in the shutter chamber having a blade at a front end thereof. The transfer robot is reciprocated within the process chamber by driving device. A shutter disk is laid on the blade of the transfer robot. The shutter disk is located on the heater of the process chamber by the transfer robot to prevent radiant heat generated from the heater from being transferred to the shower head.

Abstract: In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.

Abstract: A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

Abstract: Methods of forming a metal wiring layer on an integrated circuit include forming an insulating pattern including a recess region on an integrated circuit substrate. A metal layer is formed in the recess region and on a top surface of the insulting pattern. The metal layer is removed from the top surface of the insulating pattern adjacent the recess region and from an upper portion of the recess region. An aluminum film is formed on the metal layer at a process temperature less than a reflow temperature of the metal layer to substantially fill the upper portion of the recess region after removing the metal layer. A metal film is formed on the aluminum film at a process temperature less than the reflow temperature of the etched metal layer.