Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: An insulating structure of a high electron mobility transistor (HEMT) is provided, which comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium nitride layer, an insulating doped region disposed in the gallium nitride layer and the aluminum gallium nitride layer, and two sidewall insulating structures disposed at two sides of the insulating doped region respectively.

Abstract: A semiconductor epitaxial structure with reduced defects, including a substrate with a recess formed thereon, an island insulator on a bottom surface of the recess, spacers on sidewalls of the recess, a buffer layer in the recess and covering the island insulator, a channel layer in the recess and on the buffer layer, and a barrier layer in the recess and on the channel layer, wherein two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) is formed in the channel layer.

Abstract: The present disclosure provides a method for diagnosing cancer, assessing cancer prognosis, monitoring cancer, or assessing effectiveness of cancer treatment. The present disclosure also provides a method for diagnosing cancer, assessing cancer prognosis, monitoring cancer, or assessing effectiveness of cancer treatment by using an atypical circulating tumor cell.

Abstract: The present disclosure provides a method for screening, isolating and purifying analytes.

Abstract: The invention provides a pH-sensitive linker that can simultaneously bind metallic nanoparticles and one or more agents with various molecular size. The linker of the invention can deliver the agents into cells involved in disease processes or close to cells so that the agents can selectively target and effect on the cells. The target delivery provided by the linker of the invention can be used for example for disease sensing, imaging, drug delivery, and therapy.

Abstract: A method for forming a spanner includes following steps: preparing a cylindrical metal blank, heating the metal blank to become softened, shaping the metal blank by pressing and pushing the metal blank forward on a shaping die with a pushing unit to form two head sections and a holding section connected between the head sections, and stamping the metal blank when the metal blank still has residual heat to flatten the holding section and shape each head section into a spanner-shaped part. Therefore, a spanner product is made. The method simplifies the processing procedures, decreases residual materials, achieves a quick shaping operation, reduces processing costs, and increases the forming efficiency.

Abstract: A method for forming a golf club head includes steps of preparing a cylindrical metal blank, heating the metal blank to become softened, shaping the metal blank by pressing and pushing the metal blank forward on a shaping die with a pushing unit to form a head section and an engagement section extending outwards from the head section, and stamping the head section of the metal blank when the metal blank still has residual heat to shape the head section into a golf club head having two opposite surfaces. A bending step can be executed before or after the stamping step to bend the engagement section. Therefore, the method simplifies the processing procedures greatly, achieves a quick shaping operation, decreases residual materials and processing costs, and increases an economic benefit.

Abstract: A lampshade and frame assembly includes a lampshade body having a lampshade covering includes an upper periphery, a lower periphery, a plurality of upper hooks spacedly attached on the upper periphery, and a plurality of lower hooks spacedly attached on the lower periphery; a frame body comprising a lamp supporting frame having an outer circular frame member detachably coupled with the upper hooks, and a lower frame having an lower annular frame member detachably coupled with the lower hooks to associate the lampshade body with the frame body; an upper frame having an upper annular frame member covered on the lamp supporting frame; wherein each of the upper hook comprises a downwardly and inwardly extending recess for allowing said outer circular frame member being inserted therein, and the lower hooks comprises a upwardly and inwardly extending recess for allowing the lower annular frame being inserted therein.

Abstract: A lampshade and frame assembly includes a lampshade body having a lampshade covering includes an upper periphery, a lower periphery, a plurality of upper hooks spacedly attached on the upper periphery, and a plurality of lower hooks spacedly attached on the lower periphery; a frame body comprising a lamp supporting frame having an outer circular frame member detachably coupled with the upper hooks, and a lower frame having an lower annular frame member detachably coupled with the lower hooks to associate the lampshade body with the frame body; an upper frame having an upper annular frame member covered on the lamp supporting frame; wherein each of the upper hook comprises a downwardly and inwardly extending recess for allowing said outer circular frame member being inserted therein, and the lower hooks comprises a upwardly and inwardly extending recess for allowing the lower annular frame being inserted therein.

Abstract: A testkey structure including the following components is provided. A fin structure is disposed on a substrate and stretches along a first direction. A first gate structure and a second gate structure are disposed on the fin structure and stretch along a second direction. A first common source region is disposed in the fin structure between the first gate structure and the second gate structure. A first drain region is disposed in the fin structure at a side of the first gate structure opposite to the first common source region. A second drain region disposed in the fin structure at a side of the second gate structure opposite to the first common source region. A testkey structure is symmetrical along a horizontal line crossing the first common source region. The present invention further provides a method of measuring device defect or connection defect by using the same.

Abstract: A method for analyzing a process output and a method for creating an equipment parameter model are provided. The method for analyzing the process output includes the following steps: A plurality of process steps are obtained. A processor obtains a step model set including a plurality of first step regression models, each of which represents a relationship between N of the process steps and a process output. The processor calculates a correlation of each of the first step regression models. The processor picks up at least two of the first step regression models to be a plurality of second step regression models whose correlations are ranked at top among the correlations of the first step regression models. The processor updates the step model set by a plurality of third step regression models, each of which represents a relationship between M of the process steps and the process output.

Abstract: A testkey structure including the following components is provided. A fin structure is disposed on a substrate and stretches along a first direction. A first gate structure and a second gate structure are disposed on the fin structure and stretch along a second direction. A first common source region is disposed in the fin structure between the first gate structure and the second gate structure. A first drain region is disposed in the fin structure at a side of the first gate structure opposite to the first common source region. A second drain region disposed in the fin structure at a side of the second gate structure opposite to the first common source region. A testkey structure is symmetrical along a horizontal line crossing the first common source region. The present invention further provides a method of measuring device defect or connection defect by using the same.

Abstract: A method for making a breathable cool-feeling fabric includes blending a liquid gel matrix containing a precursor hydrogel and a solvent with a cross-linking agent to prepare an emulsion which includes hydrogel microbeads formed by gelation of the precursor hydrogel with the cross-linking agent, and press-printing a base fabric with the emulsion such that the hydrogel microbeads are trapped between interwoven yarns of the base fabric.

Abstract: The invention provides a pH-sensitive linker that can simultaneously bind metallic nanoparticles and one or more agents with various molecular size. The linker of the invention can deliver the agents into cells involved in disease processes or close to cells so that the agents can selectively target and effect on the cells. The target delivery provided by the linker of the invention can be used for example for disease sensing, imaging, drug delivery, and therapy.

Abstract: A semiconductor structure includes at least two via chains. Each via chain includes at least one first conductive component, at least one second conductive component and at least one via. The first conductive component has an axis along an extending direction of the first conductive component. The via connects the first conductive component to the second conductive component. The via has a center defining a shift distance from the axis of the first conductive component. The shift distances of the via chains are different. A testing method using such a semiconductor structure includes drawing a resistance-shift distance diagram illustrating a relationship between the resistances of the via chains and the shift distances of the via chains. At least one dimensional feature is obtained from the resistance-shift distance diagram.

Abstract: A semiconductor structure includes at least two via chains. Each via chain includes at least one first conductive component, at least one second conductive component and at least one via. The first conductive component has an axis along an extending direction of the first conductive component. The via connects the first conductive component to the second conductive component. The via has a center defining a shift distance from the axis of the first conductive component. The shift distances of the via chains are different. A testing method using such a semiconductor structure includes drawing a resistance-shift distance diagram illustrating a relationship between the resistances of the via chains and the shift distances of the via chains. At least one dimensional feature is obtained from the resistance-shift distance diagram.

Abstract: A holding device of a forming machine includes a base, a rotating set, a clamping set, and a transmission set. The rotating set penetrates through the base. The clamping set is disposed under the base. The transmission set drives a rotation of the rotating set. Further, the clamping set has a link axle and a link unit driven by the link axle in order to render two clamping units able to catch or release blanks. Simultaneously, the transmission set has a driving unit and a transmission unit adapted to drive a rotation of the driving unit whereby the link axle, the rotating base and the clamping unit are concurrently rotatably turned in a clockwise or counterclockwise direction by 180 degrees. Thus, the holding device can clamp blanks at any place between dies of the forming machine according to the need to obtain a quick processing operation.

Abstract: A data processing apparatus supporting simultaneous playback includes a processor, two tuners, a receiving element and a transmitting element. The first tuner generates first television data transmitted via a first frequency range, and provides the first television data to an internal playback device. The second tuner generates second television data transmitted via a second frequency range. The receiving element receives a data request for a selected television channel from an external electronic device. In response to the data request, the processor controls the second tuner to generate the second television data including video/audio data of the selected television channel. When the internal playback device performs playback according to the first television data, the transmitting element transmits the video/audio data of the selected television channel to the external electronic device for playback.

Abstract: A data processing apparatus supporting simultaneous playback includes a processor, two tuners, a receiving element and a transmitting element. The first tuner generates first television data transmitted via a first frequency range, and provides the first television data to an internal playback device. The second tuner generates second television data transmitted via a second frequency range. The receiving element receives a data request for a selected television channel from an external electronic device. In response to the data request, the processor controls the second tuner to generate the second television data including video/audio data of the selected television channel. When the internal playback device performs playback according to the first television data, the transmitting element transmits the video/audio data of the selected television channel to the external electronic device for playback.