Abstract: Methods and apparatuses are provided for operating a touch module of an electronic device. A communication related event is received at the electronic device. The touch module is switched from operation at a first operating frequency to operation at a second operating frequency, upon reception of the communication related event. The first operating frequency enables the touch module to receive a touch input. The second operating frequency enables the touch module to detect a specified event.

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: Methods and apparatuses are provided for operating a touch module of an electronic device. A communication related event is received at the electronic device. The touch module is switched from operation at a first operating frequency to operation at a second operating frequency, upon reception of the communication related event. The first operating frequency enables the touch module to receive a touch input. The second operating frequency enables the touch module to detect a specified event.

Abstract: The present invention relates to a magnet-integrated-type torque angle sensor module and, more particularly, to a torque angle sensor module that integrates magnets used for detecting steering direction, steering angle, torque, and steering speed and simplifies component configuration, capable of minimizing the rate of defects during assembly, improving disassembling ability, and inducing performance stabilization.

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Abstract: A tin plating solution and a method for fabricating a semiconductor device are provided. The tin plating solution comprises tin ions supplied from a soluble tin electrode, an aliphatic sulfonic acid having a carbon number of 1 to 10, an anti-oxidant, a wetting agent, and a grain refiner that is an aromatic carbonyl compound.

Abstract: There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.

Abstract: There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.

Abstract: A method of handling a page fault occurring in a non-volatile main memory system including analyzing a pattern of occurrence of the page fault based on the page fault when the page fault occurs, setting the number of pages to be consecutively processed based on analysis result of the analyzing, and consecutively processing as many pages as the number may be provided.

Abstract: A memory mapping management method for a system using nonvolatile memory (NVM) as main memory, including receiving a request to cancel a memory mapping, determining whether the memory mapping is a mapping of a file based on meta data relating to the memory mapping, separately storing the meta data when the memory mapping is the mapping of the file, and cancelling the memory mapping when the memory mapping is not the mapping of the file may be provided. Further, the memory mapping management method may include receiving a memory mapping request, searching for a memory mapping for a file in a memory mapping storage space when a requested memory mapping is a mapping of the file, and reusing a searched memory mapping found during the search when a region of the searched memory mapping includes a region required by the requested memory mapping in a virtual address space.

Abstract: An electronic device and a method a provided. The electronic device includes a first surface, a second surface opposite to the first surface, and a side surface that surrounds at least part of a space between the first and second surfaces; a Radio Frequency (RF) communication circuit; an antenna radiator that forms at least part of at least one of the first surface, the second surface, and the side surface and is connected to the RF communication circuit; a sensor that detects whether an external object contacts the antenna radiator; a switching circuit connected to the antenna radiator and the sensor; and a processor configured to receive a first value from the sensor when the antenna radiator and the sensor are connected to each other and to receive a second value from the sensor when the antenna radiator and the sensor are separated from each other.

Abstract: In a method of manufacturing a semiconductor device, a blend solution that includes a block copolymer and an adsorbent is prepared. The block copolymer is synthesized by a copolymerization between a first polymer unit and a second polymer unit having a hydrophilicity greater than that of the first polymer unit. The adsorbent on which the block copolymer is adsorbed is extracted. The block copolymer is separated from the adsorbent. The block copolymer is collected. The block copolymer may be used to form a mask on an object layer on a substrate and the mask used to etch the object layer.

Abstract: A portable terminal employing a near field communication antenna with a heat radiation function is provided. The portable terminal includes a cover provided for the portable terminal, and an antenna device mounted on an inner surface of the cover. The antenna device includes a near field communication antenna coupled to a location on the inner surface of the cover, a shield sheet coupled to an upper surface of the antenna, a heat radiation sheet coupled to an upper surface of the shield sheet so as to discharge heat transmitted from the portable terminal, and a protection cover coupled to an upper surface of the heat radiation sheet.

Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.

Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.

Abstract: A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane.

Abstract: A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.