Patents by Inventor Jung Sub Kim
Jung Sub Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10153260Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.Type: GrantFiled: January 24, 2018Date of Patent: December 11, 2018Assignee: SAMSUNG ELECTRONICS, CO., LTD.Inventors: Ji-hye Yeon, Wan-tae Lim, Young-soo Park, Jung-sub Kim, Jin-sub Lee, Ha-nul Yoo, Hye-seok Noh
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Publication number: 20180269360Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.Type: ApplicationFiled: May 21, 2018Publication date: September 20, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Ji Hye YEON, Han Kyu SEONG, Yong II KIM, Jung Sub KIM
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Patent number: 10008640Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.Type: GrantFiled: June 14, 2016Date of Patent: June 26, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hye Yeon, Han Kyu Seong, Yong Il Kim, Jung Sub Kim
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Publication number: 20180166425Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.Type: ApplicationFiled: January 24, 2018Publication date: June 14, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Ji-hye Yeon, Wan-tae Lim, Young-soo Park, Jung-sub Kim, Jin-sub Lee, Ha-nul Yoo, Hye-seok Noh
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Patent number: 9978907Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0?x+y?1, 0?y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5?n(?)×D/??5.0, where ? represents a wavelength of light generated by the active layer, n(?) represents a refractive index of the plurality of nanorods at a wavelength of ?, and D represents diameters of the plurality of nanorods.Type: GrantFiled: May 5, 2016Date of Patent: May 22, 2018Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jung Sub Kim, Dong Hyun Lee, Jin Sub Lee, Kyung Wook Hwang, In Su Shin, Eui Joon Yoon, Gun Do Lee, Jeong Hwan Jang
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Patent number: 9941443Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: GrantFiled: March 7, 2016Date of Patent: April 10, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub Lee, Jung Sub Kim, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun, Young Jin Choi, Jae Hyeok Heo
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Patent number: 9905543Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.Type: GrantFiled: October 13, 2016Date of Patent: February 27, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-hye Yeon, Wan-tae Lim, Young-soo Park, Jung-sub Kim, Jin-sub Lee, Ha-nul Yoo, Hye-seok Noh
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Patent number: 9893251Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.Type: GrantFiled: November 29, 2016Date of Patent: February 13, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-sub Kim, Yong-il Kim, Dong-gun Lee, Kyung-wook Hwang, Jin-sub Lee, Min-gyeong Gwon
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Patent number: 9842960Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.Type: GrantFiled: September 28, 2015Date of Patent: December 12, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Hyeok Heo, Jin Sub Lee, Young Jin Choi, Hyun Seong Kum, Ji Hye Yeon, Dae Myung Chun, Jung Sub Kim, Han Kyu Seong
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Patent number: 9831378Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.Type: GrantFiled: June 3, 2016Date of Patent: November 28, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub Lee, Jung Sub Kim
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Publication number: 20170250316Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.Type: ApplicationFiled: October 13, 2016Publication date: August 31, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Ji-hye YEON, Wan-tae Lim, Young-soo Park, Jung-sub Kim, Jin-sub Lee, Ha-nul Yoo, Hye-seok Noh
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Patent number: 9748438Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: GrantFiled: June 23, 2016Date of Patent: August 29, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Sub Kim, Yeon Woo Seo, Dong Gun Lee, Byung Kyu Chung, Dae Myung Chun, Soo Jeong Choi
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Publication number: 20170244010Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.Type: ApplicationFiled: November 29, 2016Publication date: August 24, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-sub KIM, Yong-il KIM, Dong-gun LEE, Kyung-wook HWANG, Jin-sub LEE, Min-gyeong GWON
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Publication number: 20170236866Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.Type: ApplicationFiled: November 16, 2016Publication date: August 17, 2017Inventors: Jin Sub LEE, Han Kyu SEONG, Yong Il KIM, Jung Sub KIM, Seul Gee LEE
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Publication number: 20170130909Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.Type: ApplicationFiled: June 14, 2016Publication date: May 11, 2017Inventors: Ji Hye YEON, Han Kyu Seong, Yong Il Kim, Jung Sub Kim
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Publication number: 20170125631Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer, and including: a plurality of quantum barrier layers; and a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and a second conductivity-type semiconductor layer disposed on the active layer, wherein the first quantum well layer is disposed closer to the first conductivity-type semiconductor layer than the second quantum well layer, wherein the second quantum well layer is disposed closer to the second conductivity-type semiconductor layer than the first quantum well layer, wherein a thickness of the second quantum well layer is greater than a thickness of the first quantum well layer, and wherein each of theType: ApplicationFiled: August 12, 2016Publication date: May 4, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub LEE, Jung Sub KIM, Han Kyu SEONG, Soon Jo KWON, Ji Hye YEON, Dong Gun LEE
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Publication number: 20170054055Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0?x+y?1, 0?y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5?n(?)×D/??5.0, where ? represents a wavelength of light generated by the active layer, n(?) represents a refractive index of the plurality of nanorods at a wavelength of ?, and D represents diameters of the plurality of nanorods.Type: ApplicationFiled: May 5, 2016Publication date: February 23, 2017Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jung Sub KIM, Dong Hyun LEE, Jin Sub LEE, Kyung Wook HWANG, In Su SHIN, Eui Joon YOON, Gun Do LEE, Jeong Hwan JANG
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Publication number: 20170040490Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.Type: ApplicationFiled: June 3, 2016Publication date: February 9, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub LEE, Jung Sub KIM
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Patent number: 9508898Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.Type: GrantFiled: August 27, 2015Date of Patent: November 29, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Byung Kyu Chung, Jung Sub Kim, Soo Jeong Choi, Yeon Woo Seo, Dong Gun Lee
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Publication number: 20160300978Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: ApplicationFiled: June 23, 2016Publication date: October 13, 2016Applicant: Samsung Electronics Co., Ltd.Inventors: Jung Sub KIM, Yeon Woo SEO, Dong Gun LEE, Byung Kyu CHUNG, Dae Myung CHUN, Soo Jeong CHOI