Patents by Inventor Jung Sub Kim
Jung Sub Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9461199Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.Type: GrantFiled: June 26, 2015Date of Patent: October 4, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Hyeok Heo, Jung Sub Kim, Young Jin Choi, Jin Sub Lee, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun
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Patent number: 9406839Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: GrantFiled: August 24, 2015Date of Patent: August 2, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Sub Kim, Yeon Woo Seo, Dong Gun Lee, Byung Kyu Chung, Dae Myung Chun, Soo Jeong Choi
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Publication number: 20160190388Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: ApplicationFiled: March 7, 2016Publication date: June 30, 2016Inventors: JIN SUB LEE, Jung Sub KIM, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Dae Myung CHUN, Young Jin CHOI, Jae Hyeok HEO
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Patent number: 9362448Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.Type: GrantFiled: April 14, 2015Date of Patent: June 7, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Soo Jeong Choi, Jung Sub Kim, Byung Kyu Chung, Yeon Woo Seo, Dong Gun Lee
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Patent number: 9312439Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: GrantFiled: August 7, 2014Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Sub Lee, Jung Sub Kim, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Dae Myung Chun, Young Jin Choi, Jae Hyeok Heo
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Publication number: 20160099376Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.Type: ApplicationFiled: September 28, 2015Publication date: April 7, 2016Inventors: Jae Hyeok HEO, Jin Sub LEE, Young Jin CHOI, Hyun Seong KUM, Ji Hye YEON, Dae Myung CHUN, Jung Sub KIM, Han Kyu SEONG
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Publication number: 20160072007Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.Type: ApplicationFiled: April 14, 2015Publication date: March 10, 2016Inventors: Soo Jeong CHOI, Jung Sub KIM, Byung Kyu CHUNG, Yeon Woo SEO, Dong Gun LEE
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Publication number: 20160064608Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.Type: ApplicationFiled: August 27, 2015Publication date: March 3, 2016Inventors: Byung Kyu CHUNG, Jung Sub KIM, Soo Jeong CHOI, Yeon Woo SEO, Dong Gun LEE
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Publication number: 20160056331Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.Type: ApplicationFiled: August 24, 2015Publication date: February 25, 2016Inventors: Jung Sub KIM, Yeon Woo SEO, Dong Gun LEE, Byung Kyu CHUNG, Dae Myung CHUN, Soo Jeong CHOI
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Patent number: 9269865Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.Type: GrantFiled: October 16, 2014Date of Patent: February 23, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Dae Myung Chun, Jung Sub Kim, Jin Sub Lee, Sam Mook Kang, Yeon Woo Seo, Han Kyu Seong, Young Jin Choi, Jae Hyeok Heo
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Patent number: 9257605Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.Type: GrantFiled: July 2, 2015Date of Patent: February 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yeon Woo Seo, Jung-Sub Kim, Young Jin Choi, Denis Sannikov, Han Kyu Seong, Dae Myung Chun, Jae Hyeok Heo
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Publication number: 20160013362Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.Type: ApplicationFiled: June 26, 2015Publication date: January 14, 2016Inventors: Jae Hyeok HEO, Jung Sub KIM, Young Jin CHOI, Jin Sub LEE, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Dae Myung CHUN
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Patent number: 9172008Abstract: A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.Type: GrantFiled: January 17, 2014Date of Patent: October 27, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook Hwang, Jung Sub Kim
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Publication number: 20150303350Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.Type: ApplicationFiled: July 2, 2015Publication date: October 22, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yeon Woo SEO, Jung-Sub KIM, Young Jin CHOI, Denis SANNIKOV, Han Kyu SEONG, Dae Myung CHUN, Jae Hyeok HEO
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Patent number: 9142724Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.Type: GrantFiled: August 22, 2013Date of Patent: September 22, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-sub Kim, Jin-sub Lee, Cheol-soo Sone, Kyung-wook Hwang
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Publication number: 20150236202Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.Type: ApplicationFiled: October 16, 2014Publication date: August 20, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae Myung CHUN, Jung Sub KIM, Jin Sub LEE, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Young Jin Choi, Jae Hyeok HEO
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Patent number: 9099573Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.Type: GrantFiled: September 12, 2014Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yeon Woo Seo, Jung-Sub Kim, Young Jin Choi, Denis Sannikov, Han Kyu Seong, Dae Myung Chun, Jae Hyeok Heo
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Publication number: 20150194571Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.Type: ApplicationFiled: August 7, 2014Publication date: July 9, 2015Inventors: Jin Sub LEE, Jung Sub KIM, Sam Mook KANG, Yeon Woo SEO, Han Kyu SEONG, Dae Myung CHUN, Young Jin CHOI, Jae Hyeok HEO
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Publication number: 20150118777Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.Type: ApplicationFiled: September 12, 2014Publication date: April 30, 2015Inventors: Yeon Woo Seo, Jung-Sub Kim, Young Jin Choi, Denis Sannikov, Han Kyu Seong, Dae Myung Chun, Jae Hyeok Heo
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Patent number: 9012884Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.Type: GrantFiled: March 14, 2013Date of Patent: April 21, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Sub Kim, Sung-Won Hwang, Geun-Woo Ko, Cheol-Soo Sone, Sung-Hyun Sim, Jin-Sub Lee