Abstract: Disclosed is a cathode active material having a core-shell structure. The core-shell cathode active material includes a core including a lithium transition metal oxide with excellent electrochemical properties and a shell formed by coating the surface of the core with a transition metal oxide. The formation of the shell by coating a transition metal oxide on the surface of the core comprising a lithium transition metal oxide prevents the structure of the lithium transition metal oxide from collapsing and inhibits the dissolution of manganese ions, enabling the fabrication of a hybrid capacitor with improved energy density and rate characteristics. Also disclosed is a method for producing the cathode active material.

Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Abstract: A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.

Abstract: A nitride semiconductor light emitting device includes a substrate, a multi-layer structure, a light-transmitting concave-convex structure and a light emitting structure. The multi-layer structure has layers of a first layer and a second layer such that the first and second layers have different refractive indexes and are alternately stacked. The concave-convex structure is disposed in an upper surface of the multi-layer structure and includes a light-transmitting material. The light emitting structure is disposed on the multi-layer structure and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

Abstract: There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an optical extraction film disposed between the substrate and the nitride semiconductor layer and having a refractive index between the first refractive index and the second refractive index.

Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.

Abstract: A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner.

Abstract: According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer.

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract: An injector and a material layer deposition chamber including the same. An injector includes: a plurality of independent sections; and a gas inlet and a gas outlet that are provided in each of the plurality of independent sections, wherein gas outlets provided in two adjacent sections are positioned and configured to inject gas in a limited and different direction relative to each other.

Abstract: An n-type aluminum gallium nitride (AlGaN) thin film and an ultraviolet light emitting device including the same. The ultraviolet light emitting device includes: an aluminum nitride (AlN) buffer layer on a substrate; and an n-type AlGaN layer, an active layer, a p-type AlGaN layer that are sequentially stacked on the AlN buffer layer. A silicon doping density of the n-type AlGaN layer increases with respect to an increasing vertical position of the n-AlGaN layer with reference to the AlN buffer layer.

Abstract: Disclosed are a silicon nanostructured material with theoretical storage capacity of energy resulting from electrochemical reaction with lithium improved more than 10 times as compared to the existing graphite material and having superior output characteristics, an electrode including the same, and a secondary battery and an electrochemical capacitor including the electrode as a negative electrode. The physical stability of the electrode active material is improved and an electrode with high performance can be obtained. Since more energy can be stored as compared to the graphite material of the same thickness and high-output performance can be achieved through the nanostructure, energy density can be remarkably improved as compared to the existing lithium-ion battery by about 2 times. An asymmetric lithium-ion secondary battery including the electrode active material is applicable to storage of renewable energy, ubiquitous power source, power supply for machinery and vehicles, or the like.

Abstract: An etching apparatus for substrates includes an etching tank including an etching solution, a cassette having a plurality of substrates mounted therein and which is installed inside the etching tank, a porous plate installed on a lower surface of the cassette and a plurality of discharge sections provided in the porous plate corresponding to the substrates and each of the discharge sections having a plurality of discharge ports. The etching apparatus further includes a plurality of first lines connected to the discharge ports respectively, and supplied with a gas to provide bubbles to the substrates through the discharge ports. The first lines are divided into a plurality of groups, and at least one group is supplied with a gas having a pressure different from a pressure of a gas supplied to other groups.

Abstract: A substrate etching apparatus includes a chamber in which first and second insulating substrates are received, a blocking shutter, and a first spray head. The first spray head is arranged in the chamber and sprays an etchant toward the first insulating substrate. The blocking shutter surrounds end portions of the first and second substrates and isolates a first area in which the first insulating substrate is positioned from a second area in which the second insulating substrate is positioned.

Abstract: An etching apparatus for substrates includes an etching tank including an etching solution, a cassette having a plurality of substrates mounted therein and which is installed inside the etching tanks a porous plate installed on a lower surface of the cassette and a plurality of discharge sections provided in the porous plate corresponding to the substrates and each of the discharge sections having a plurality of discharge ports. The etching apparatus further includes a plurality of first lines connected to the discharge ports respectively, and supplied with a gas to provide bubbles to the substrates through the discharge ports. The first lines are divided into a plurality of groups, and at least one group is supplied with a gas having a pressure different from a pressure of a gas supplied to other groups.

Abstract: Disclosed is a deflection yoke which is so configured that a coil separator and horizontal deflection coils have angular cross sectional shapes and a ferrite core and vertical deflection coils have circular cross sectional shapes to improve deflection sensitivity thereby reducing power consumption.

Abstract: Disclosed is a deflection yoke which is so configured that a coil separator and horizontal deflection coils have angular cross sectional shapes and a ferrite core and vertical deflection coils have circular cross sectional shapes to improve deflection sensitivity thereby reducing power consumption.