Abstract: A nonlinear conversion system using precision mapping and the method thereof are described. The system includes a source value converter, a mapping table unit, a recovering parameter computing unit, and an output computing unit. The method includes the steps of: receiving an input value; converting the input value into a source value; mapping the source value to a destination value in a limited domain for restricting the calculation within a destination domain; establishing a mapping table by directly selecting a precision according to the destination domain and inverse-mapping back to a source domain; and outputting the destination value according to the mapping table, combining the destination value with a recovering parameter for recovering an output value produced by the nonlinear conversion of the input value.

Abstract: A document camera is used to show image of an object on a display. In the document camera, a first image data of the object obtained by a video-capturing device is derived into a second image data and a third image data by an image processor in response to a zoom operation, wherein the second image data results in a zoomed image of the object and the third image data results in a scaled image of the object. In response to the zoom operation, there is also a mark frame data generated by a position information controller, which results in a mark frame. The zoomed image, scaled image and mark frame are then synthesized into a combined image by an image synthesizer, and the mark frame superimposes the scaled image to indicate a result of the zoom operation.

Abstract: A handlebar adjusting device for a bicycle has an erecting rod, a connecting piece, a tube fastening piece and a retractable element. The erecting rod has a first pivotal block and a second pivotal block mounted thereon. The connecting piece has a one end defined with a recess for engaging the first pivotal block and has another end having a third pivotal block. The bar-fastening piece is attached to the connecting piece. The retractable element pivotally connects between the second and third pivotal blocks on the erecting rod and is composed of a fourth pivotal block, outer tube, movable piston, hydraulic valve assembly, piston shaft, compressing device, driving shaft, anti-leaking ring and fifth pivotal block. By retracting the piston shaft of the retractable element, angles between the connecting piece and the erecting rod are adjustable to further adjust heights and to provide anti-vibration efficiency to the handlebar.

Abstract: A solar power module having carbon nanotubes comprises an at-least partial transparent first conducting layer, a second conducting layer for outputting electrons, and a mixing layer for donating and further forwarding electrons and holes excited by the light penetrating through the first conducting layer, in which the mixing layer is sandwiched between the first conducting layer and the second conducting layer. The mixing layer further includes a plurality of carbon nanotubes grown from either the first conducting layer or the second conducting layer for forwarding electrons respectively to either the first conducting layer or the second conducting layer.

Abstract: Roughly described, a floating gate memory cell is fabricated by forming an oxide-nitride dielectric layer above a floating gate of the memory cell and in an oxide growth region not above a floating gate. The nitride layer is removed in the oxide growth region using a mask that protects the nitride layer above the floating gate, and then the bottom oxide layer is removed in the oxide growth region using a wet etch that does not affect the nitride remaining above the floating gate. First and second oxide layers are then formed both above the floating gate and in the oxide growth region, to act as the top layer of ONO above the floating gate and as the gate oxide in the oxide growth region. One of the first and second oxide layers is formed using in-situ steam generation.

Abstract: A shock absorber having a pressure gauge includes a main body and a pressure gauge. The pressure gauge is mounted on the top of a pressure chamber and interconnected with the pressure chamber. The pressure chamber is provided with an air inlet to pump air into the pressure chamber. The air pressure can be read from the pressure gauge to monitor the air pressure in the pressure chamber and to adjust when necessary to maintain a most desirable air pressure in the pressure chamber.

Abstract: In a method for forming STI in a silicon substrate having a pad oxide over the substrate, a hard mask is formed over the pad oxide, the hard mask and the pad oxide are patterned to form an opening, the silicon substrate is etched through the opening to form a trench, a liner oxide is formed over the trench, an STI insulator is formed in the trench, and the hard mask and the pad oxide are removed. Before the formation of the liner oxide, a clean process is performed that comprises applying silicon-consuming solution to round the top corners of the trench.

Abstract: A weight adjustable golf club head is provided. The club head has a trough at a lower part of the club head's back and a weight positioned inside the trough. The trough is arranged to follow the curvature of the club head's bottom. The trough has a tapered mouth along the surface of the club head and a base. There is an insertion hole at a position along the trough. The weight could be inserted into the trough through the insertion hole, and then slid along the trough. The weight contains a seat, a bolt, and a loading ring. The seat has a locking rim and the positioning rim which are inside the trough's base and mouth respectively when the weight is slid into the trough. The seat's body and the locking rim have a number of breaks so that the locking rim could be stretched. When the bolt is screwed into or out of the seat, the locking rim would be stretched or retracted, so that the weight could be locked or un-locked in the trough.

Abstract: Roughly described, a floating gate memory cell is fabricated by forming an oxide-nitride dielectric layer above a floating gate of the memory cell and in an oxide growth region not above a floating gate. The nitride layer is removed in the oxide growth region using a mask that protects the nitride layer above the floating gate, and then the bottom oxide layer is removed in the oxide growth region using a wet etch that does not affect the nitride remaining above the floating gate. First and second oxide layers are then formed both above the floating gate and in the oxide growth region, to act as the top layer of ONO above the floating gate and as the gate oxide in the oxide growth region. One of the first and second oxide layers is formed using in-situ steam generation.

Abstract: The package of the present invention includes a chip located on a substrate with signal transferring device electrically connected between them. Solder balls connect the substrate and thus electrically connect the substrate to external circuits. Molding compound is covered to protect the chip and signal transferring means. The heat-slug is capped over the molding compound through a conductive glue. The entire area of the upper surface of the heat-slug is exposed to the ambient to improve the ability to spread heat.

Abstract: A method for fabricating a color filter array substrate includes forming a black matrix on a substrate, depositing a color resist on the substrate and the black matrix, and patterning the color resist to form a color filter layer. The color resist has a boiling point in a range of about 70 to 80 degrees Celsius and has a viscosity in a range of about 3 to 5 centipoise and has a solid particle content below or equal to about 20 percent.

Abstract: A handlebar adjusting device includes an upright tube, a support bracket, a telescopic member, a pivot base, and an operation handle. The support bracket is moved by movement of the telescopic member to pivot upward and downward relative to the upright tube, so that the handlebar is moved with the support bracket so as to adjust the position of the handlebar. Thus, the position the handlebar can be adjusted easily and conveniently, thereby facilitating the user adjusting the handlebar.

Abstract: Disclosed is an adaptive receiving MIMO (multi input and multi output) system and method which decides a symbol detecting order so as to estimate the symbol having the minimum summation of weights of least square errors at the time of estimating the symbol for respective equalizers provided in parallel by the number of transmit antennas, and updates filter tap coefficients based on the RLS algorithm according to the detecting orders. Therefore, the filter tap coefficients are directly updated without tracking channels in the time-varying channel environment, and accordingly, detection performance very similar to those of the channel tracking and conventional V-BLAST scheme is provided with reduced complexity.

Abstract: A spatial multiplexing detection device using a MIMO technology comprises a MIMO detector for detecting receive symbols which correspond to symbols transmitted through transmit antennas from receive signals when the transmit data transmitted by the terminal group are received through receive antennas; a terminal identifier for identifying the receive symbols detected by the MIMO detector into symbols which correspond to respective terminals in the terminal group; a symbol demapper for demapping the receive symbols identified by the terminal identifier to binary data which correspond to a modulation method used by the terminal group; and a reverse data processor for performing deinterleaving, decoding of error correction codes, and descrambling on the binary data demapped by the symbol demapper, and detecting receive data of the respective terminals.

Abstract: A method of fabricating a semiconductor device includes providing a wafer substrate, forming a first oxide layer over the wafer substrate using a single wafer low pressure chemical vapor deposition oxidation process, forming a second oxide layer over the first oxide layer by a single wafer oxidation process, forming a nitride layer over the second oxide layer using a low temperature and pressure deposition process, and growing a top oxide layer over the nitride layer.

Abstract: A cartridge for a driving device includes a stationary part extending transversely from a nose plate, and a slidable part mounted slidably on cooperating with the stationary part to define a nail-receiving channel which has an inverted U-shaped portion and a straight branch portion. The U-shaped portion has a bight segment and opposing segments extending downwardly and respectively from two opposite ends of the bight segment toward a discharging end of the nose plate. The straight branch portion extends upwardly from one of the opposite ends of the bight segment in the vertical direction.

Abstract: A method of fabricating a semiconductor device includes providing a wafer substrate, forming a first oxide layer over the wafer substrate using a single wafer low pressure chemical vapor deposition oxidation process, forming a second oxide layer over the first oxide layer by a single wafer oxidation process, forming a nitride layer over the second oxide layer using a low temperature and pressure deposition process, and growing a top oxide layer over the nitride layer.

Abstract: A method of fabricating a flash memory. A tunneling dielectric layer and a conductive layer are formed on a substrate. The conductive layer is patterned to form a floating gate. A source/drain region is formed in the substrate between the floating gates. A gate dielectric layer is formed. The gate dielectric layer includes an oxide layer formed on the floating gate by in-situ steam generation (ISSG). A control gate is formed on the gate dielectric layer.

Abstract: A method of fabricating a semiconductor device is disclosed. A wafer substrate is provided. A first silicon oxide layer is formed over the wafer substrate. A nitride layer is formed over the first silicon oxide layer using a low temperature deposition process. A second silicon oxide layer is formed over the nitride layer. The low temperature process can form a nitride layer for an oxide-nitride-oxide (ONO) dielectric structure at about a temperature of 700° C. By such a process, an ONO dielectric structure can be formed using a low temperature deposition process, which can reduce the thickness of the ONO dielectric structure.

Abstract: The invention is a system for controlling the key-lock switch by output or cutoff the electronic control signals to switch the key-lock device through editing the received/transmitted information data via spread frequency digital modulation/demodulation. The confidentiality and privacy is even re-enforced when the received/transmitted information data is further protected through encryption and decryption process. The system includes: a. at least an electronic key which is operable to transfer the information data, and the information data is transmitted in the form of radio frequency signal after being edited by baseband coding technology and digital-to-analog convert technology; and b.