Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: Embodiments relate to a polymer film. The polymer film comprises a polymer resin selected from the group consisting of a polyamide-based resin and a polyimide-based resin and has a haze (HZ0) before autoclave treatment of 3% or less and a ?HZ24 represented by Equation 1a of 500% or less.

Abstract: The present invention relates to a novel benzotriazole derivative compound, a tautomer thereof, a pharmaceutically acceptable salt thereof, a hydrate thereof, or a stereoisomer thereof, which are related to a compound for inhibiting ENPP1, a composition for inhibiting ENPP1, and a method for inhibiting ENPP1.

Abstract: The present invention relates to an antigen-binding molecule comprising a heavy chain variable region comprising a heavy-chain complementarity-determining region 1 (HCDR1) comprising an amino acid sequence represented by Sequence No. 1, an HCDR2 comprising an amino acid sequence represented by Sequence No. 2, and an HCDR3 comprising an amino acid sequence represented by Sequence No. 3; a light-chain variable region comprising a light-chain complementarity-determining region 1 (LCDR1) comprising an amino acid sequence represented by Sequence No. 4, an LCDR2 comprising an amino acid sequence represented by Sequence No. 5, and an LCDR3 comprising an amino acid sequence represented by Sequence No. 6; wherein the antigen-binding molecule is a T cell receptor (TCR); and to a cell line expressing the same.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery using a positive electrode containing the positive electrode active material. More particularly, the present invention relates to a positive electrode active material that is able to solve a problem of increased resistance according to an increase in Ni content by forming a charge transport channel in a lithium composite oxide and a lithium secondary battery using a positive electrode containing the positive electrode active material.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: The present invention relates to an image encoding/decoding method and apparatus. An image encoding method according to the present invention may comprise generating a transform block by performing at least one of transform and quantization; grouping at least one coefficient included in the transform block into at least one coefficient group (CG); scanning at least one coefficient included in the coefficient group; and encoding the at least one coefficient.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: A multilayer electronic component has a body and a non-conductive resin layer. The non-conductive resin layer includes a body cover portion disposed in a region of an external surface of the body in which an electrode layer of an external electrode is not disposed, and an extending portion extending from the body cover portion between the electrode layer and a conductive resin layer of the external electrode, to thereby suppress arc discharge, improve bending strength, and improve moisture resistance.

Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.

Abstract: A server according to an embodiment includes a processor configured to receive a friend add request for a target account from a user terminal accessed with a user account; based on one of the user account and the target account being a protected account, transmit an approval request for the friend add request to a protector account connected to the protected account; and based on receiving a reply to the approval request from the protector terminal, add the target account to a friend list of the user account.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A method of inactivating harmful microorganisms of a filtration medium including pathogenic bacteria and viruses is disclosed which includes placing a predetermined quantity of a hybridized fluorescent silk on to a filtration medium, applying light for a predetermined amount of time to the placed quantity of the hybridized fluorescent silk, and passing a fluid through the medium, wherein the fluid is one of substantially air or substantially water, wherein the hybridized fluorescent silk is one of KillerRed, SuperNova, KillerOrange, Dronpa, TurboGFP, mCherry, or any combination thereof.

Abstract: The present disclosure relates to a vehicle door coupling device, and more specifically, to a vehicle door coupling device for mechanically coupling together a first member having a first hole and a second member having a second hole at a position corresponding to the first hole.

Abstract: A method of disinfection of a surface of a subject of harmful microorganisms including pathogenic bacteria and viruses upon visible light irradiation using a hybridized fluorescent silk is provided. The method includes placing a predetermined quantity of the hybridized fluorescent silk i) directly on to a skin surface of a subject; or ii) on a medium and then placing the medium on the skin surface of the subject. The method further includes applying light in the visible spectrum for a predetermined amount of time to the placed quantity of hybridized fluorescent silk, wherein the hybridized fluorescent silk is one of KillerRed, SuperNova, KillerOrange, Dronpa, TurboGFP, mCherry, or any combination thereof.

Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: A user terminal according to an embodiment may include a processor configured to: based on accessing an instant messaging server with a user account and the user account being a general account, display a general interface for a plurality of services provided to the general account; and based on the user account being a protected account, display a protected interface in which at least some of the plurality of services provided to the general account is restricted.