Abstract: A method for processing an abusing message in an anonymous chatroom includes providing a rule set of a latest version to an administrator terminal of the anonymous chatroom when the administrator terminal logs in to an account through a message application or enters the anonymous chatroom, receiving a new message in the anonymous chatroom, providing the new message to the administrator terminal, receiving a request for hiding the new message from the administrator terminal when the new message is determined to be an abusing message based on at least one of a spam keyword and the rule set stored in the administrator terminal, and transmitting a command to hide the new message to a user terminal that joins the anonymous chatroom according to the request for hiding the new message.

Abstract: A negative electrode material for a secondary battery includes a matrix containing silicon oxide, a composite oxide of one or more doping elements selected from the group consisting of an alkali metal, an alkaline earth metal, and a post-transition metal, and silicon, or a mixture thereof; and silicon nanoparticles dispersed and embedded in the matrix; wherein a hardness and a Young's modulus measured by a nanoindentation test are 4.0 GPa or more and 40 GPa or more, respectively, and in an X-ray diffraction pattern using a CuK? ray, a ratio (A1/A2) of an area (A1) of a first peak present in a region where a diffraction angle 2? is 10° to 27.4° to an area (A2) of a second peak present in a region where the diffraction angle 2? is 28±0.5° is 0.8 to 6.

Abstract: Disclosed is a method of manufacturing a silicon carbide wafer. The method of manufacturing a silicon carbide wafer includes a step of disposing a silicon carbide block in a crucible; a step of sublimating a silicon carbide included in the silicon carbide block to form a silicon carbide ingot; and a step of processing the silicon carbide ingot.

Abstract: The present invention relates to a lithium composite oxide including a coating layer having a boron-containing oxide and a lithium secondary battery including the same. More particularly, the present invention relates to a lithium composite oxide improved in lifetime and capacity characteristics by inducing a predetermined correlation between the molar ratio of nickel in a lithium composite oxide including a coating layer having a boron-containing oxide and a full width at half-maximum (FWHM; deg., 2?) of a (104) peak among XRD peaks defined by the hexagonal lattice with an R-3m space group, and a lithium secondary battery including the same.

Abstract: A method of manufacturing interior parts for a vehicle includes: forming a first plating layer on a surface of an injection molded product through electroless plating; printing a symbol part on the first plating layer; partially removing the first plating layer to a size corresponding to the symbol part from a rear surface of the injection molded product; forming a second plating layer on the first plating layer; and removing the symbol part and the first plating layer from the surface of the injection molded product on which the second plating layer is formed.

Abstract: A laser machining apparatus includes, a processing chamber, a window disposed in a surface of the processing chamber, a substrate carrier disposed inside the processing chamber and facing the window, a laser irradiator which irradiates a laser onto the substrate carrier through the window, a protector supplier disposed on a side of the processing chamber, a protector retriever disposed on an opposite side of the processing chamber opposite to the side of the processing chamber, and a protector which connects the protector supplier with the protector retriever, where at least a portion of the protector is disposed between the substrate carrier and the window in the processing chamber.

Abstract: The present invention relates to a positive electrode active material having improved electrical characteristics by adjusting an aspect ratio gradient of primary particles included in a secondary particle, a positive electrode including the positive electrode active material, and a lithium secondary battery using the positive electrode.

Abstract: The present invention relates to an image encoding/decoding method and apparatus. An image encoding method according to the present invention may comprise generating a transform block by performing at least one of transform and quantization; grouping at least one coefficient included in the transform block into at least one coefficient group (CG); scanning at least one coefficient included in the coefficient group; and encoding the at least one coefficient.

Abstract: The present invention relates to an image encoding/decoding method and device. The image decoding method according to the present invention comprises the steps of: decoding a prediction mode index; determining whether the prediction mode index indicates function-based intra prediction; inducing a parameter (s) for generating a function, when the prediction mode index indicates the function-based intra prediction; generating the function on the basis of the induced parameter (s); and performing intra prediction by using the generated function.

Abstract: An operation method of an IAB node in a communication system may comprise: measuring a power difference between a first signal received from a first node and a second signal received from a second node; controlling a transmit power of each of the first node and the second node based on the power difference; generating scheduling information for allowing the first node and the second node to simultaneously transmit signals; transmitting the scheduling information to the first node and the second node; and receiving signals that the first node and the second node simultaneously transmit according to the scheduling information by using the transmit power.

Abstract: A source driver includes a pin to which a first voltage or a second voltage is applied; an output multiplexer configured to select a data voltage and a black grayscale voltage of pixel data; and a controller configured to control a voltage level of the black grayscale voltage differently depending on the voltage applied to the pin.

Abstract: In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cm2 or less.

Abstract: A method and apparatus for generating late reverberation are provided. The method includes generating a reverberation parameter required to generate late reverberation based on an early room impulse response, outputting late reverberation based on the reverberation parameter, and outputting a room impulse response based on the early room impulse response and the late reverberation.

Abstract: A battery pack and a method of manufacturing the same are provided. The battery pack includes a battery module in which a drain hole is formed in a bottom surface thereof, a plate disposed on a top surface of the battery module, a heat dissipation body provided between the battery module and the plate, and a blocking part provided between the battery module and the plate to prevent the heat dissipation body from being introduced into the drain hole.

Abstract: Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within ?1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.

Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A server according to an embodiment includes a processor configured to receive a friend add request for a target account from a user terminal accessed with a user account; based on one of the user account and the target account being a protected account, transmit an approval request for the friend add request to a protector account connected to the protected account; and based on receiving a reply to the approval request from the protector terminal, add the target account to a friend list of the user account.