Abstract: In a wave focusing device and a wave emitting device having the wave focusing device, the wave focusing device has a plurality of filters and focuses a wave by a phase overlap. The plurality of filters includes a first filter formed on a substrate, a second filter formed on the substrate and overlapping with the first filter in a first area, and a third filter formed on the substrate and overlapping with the second filter in a second area. A size of the first area is substantially same as that of the second area. A first portion of the second filter in the first area is inverted to a second portion of the second filter in the second area, with respect to a first axis. A wave passing through the wave focusing device is focused at a center of each of the first, second and third filters.

Abstract: Provided is a mold for manufacturing a skin attachable thin film, the mold including: a cast part having a ‘U’ shape to accommodate a mixed solution in an inner space, and including a lower surface part and a side part, and an inner space accommodating the mixed solution; and at least one protruding pillar protruding from at least a partial region of the lower surface part.

Abstract: A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a pinned layer pattern, a free layer pattern including boron (B), a tunnel barrier layer pattern between the pinned layer pattern and the free layer pattern, an oxide layer pattern spaced apart from the tunnel barrier layer pattern with the free layer pattern therebetween, the oxide layer pattern including a metal borate, and a capping layer pattern spaced apart from the free layer pattern with the oxide layer pattern therebetween, the capping layer pattern including a metal boride, wherein a difference between a boron concentration of the free layer pattern and a boron concentration of the oxide layer pattern is 10 at % or less, and a difference between the boron concentration of the oxide layer pattern and a boron concentration of the capping layer pattern is 10 at % or less.

Abstract: A transparent conductor according to an exemplary embodiment of the present invention includes a transparent substrate, and a transparent conductive pattern formed on the transparent substrate, and the transparent conductor includes a nanostructure on an upper surface of at least one of the transparent substrate and the transparent conductive pattern.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: In a wave focusing device and a wave emitting device having the wave focusing device, the wave focusing device has a plurality of filters and focuses a wave by a phase overlap. The plurality of filters includes a first filter formed on a substrate, a second filter formed on the substrate and overlapping with the first filter in a first area, and a third filter formed on the substrate and overlapping with the second filter in a second area. A size of the first area is substantially same as that of the second area. A first portion of the second filter in the first area is inverted to a second portion of the second filter in the second area, with respect to a first axis. A wave passing through the wave focusing device is focused at a center of each of the first, second and third filters.

Abstract: An embodiment of the present invention provides an ultrasonic wave amplifying unit which can improve ultrasonic power in air, wherein the ultrasonic wave amplifying unit includes multiple rings having a concentric axis and each having a first width, and a slit having a second width is formed between the rings and an air layer is formed between the multiple rings and an ultrasonic wave generator generating ultrasonic waves or a transfer medium transferring the ultrasonic waves.

Abstract: A method for manufacturing a microstructure-based drug injection device according to an embodiment of the present invention includes: a forming mold preparation step for preparing a forming mold formed in a shape corresponding to a microstructure to be manufactured; a biodegradable material-mixed solution application step for applying a biodegradable material-mixed solution to the forming mold; a primary drying step for drying the biodegradable material-mixed solution applied to the forming mold and forming a needle film in which the microstructure is formed; a drug filling step for filling a drug into a filling space formed by the microstructure; and a secondary drying step for drying the needle film, wherein, in the filling space that has undergone the secondary drying step, an inner space portion is formed in a region other than in the region in which the drug is accommodated.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: A nucleic acid film fabrication method, includes: a mixing step in which a nucleic acid is added in powder form to distilled water or deionized water to prepare a mixed solution; a stirring step in which the mixed solution is stirred; a mixed solution application step in which the mixed solution is applied to a mold corresponding in shape to a final product of a nucleic acid film; and a drying step in which the mixed solution applied to the mold is dried to be formed into the nucleic acid film, wherein the mold has a groove formed thereon in a thickness direction thereof, such that the nucleic acid film passing through the drying step has a protrusion protruding from one surface thereof toward human skin to correspond to the groove.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: An embodiment of the present invention provides an ultrasonic wave amplifying unit which can improve ultrasonic power in air, wherein the ultrasonic wave amplifying unit includes multiple rings having a concentric axis and each having a first width, and a slit having a second width is formed between the rings and an air layer is formed between the multiple rings and an ultrasonic wave generator generating ultrasonic waves or a transfer medium transferring the ultrasonic waves.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

Abstract: A method for manufacturing a three-dimensional structure through nano-imprinting, includes: a stamp preparation step in which a stamp formed with a convex-concave portion corresponding to a pattern of functional layers to be formed is prepared; a material formation step in which at least one material for forming the functional layers is formed to a thickness of several to dozens of nanometers on the convex-concave portion; a material stacking step in which the material formed on the convex-concave portion is stacked on a substrate; and a functional layer securing step in which the material is cured by applying pressure, heat and pressure, or light and pressure thereto such that the material can be converted into the functional layers.

Abstract: Semiconductor devices may include a first memory cell on a substrate and a second memory cell on the substrate and adjacent to the first memory cell. The first memory cell may include a first reference layer, a first storage layer, a first tunnel layer between the first reference layer and the first storage layer, and a first spin-orbit torque (SOT) line in contact with the first storage layer. The second memory cell may include a second reference layer, a second storage layer, a second tunnel layer between the second reference layer and the second storage layer, a second SOT line adjacent to the second storage layer, and an enhancing layer between the second storage layer and the second SOT line.

Abstract: A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250° K or less.

Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.