Abstract: A semiconductor device manufacturing method includes: forming a first well of the first conductivity type in a substrate; forming a second well of the first conductivity type in a first region of the substrate; forming a third well of the second conductivity type underneath the second well in the first region of the substrate in a position overlapping with the first well located underneath the second well in the first region of the substrate; forming a fourth well, that surrounds the second well and has the second conductivity type, in the first region of the substrate; forming a fifth well of the first conductivity type above the first well in the second region of the substrate; and forming a sixth well of the second conductivity type above the first well in the second region of the substrate.

Abstract: A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resistors is made smaller than the peak impurity concentration in the extension regions, and the depth of the ballast resistors is made greater than the depth of the extension regions.

Abstract: A semiconductor device manufacturing method includes: forming a first well of the first conductivity type in a substrate; forming a second well of the first conductivity type in a first region of the substrate; forming a third well of the second conductivity type underneath the second well in the first region of the substrate in a position overlapping with the first well located underneath the second well in the first region of the substrate; forming a fourth well, that surrounds the second well and has the second conductivity type, in the first region of the substrate; forming a fifth well of the first conductivity type above the first well in the second region of the substrate; and forming a sixth well of the second conductivity type above the first well in the second region of the substrate.

Abstract: A semiconductor device includes a memory transistor including a first side wall insulating film and a second side wall insulating film disposed on the outside; a high-voltage transistor including a third side wall insulating film having the same composition as that of the first side wall insulating film, and a fourth side wall insulating film having the same composition as that of the second side wall insulating film, the fourth side wall insulating film being disposed on the outside; and a low-voltage transistor including a fifth side wall insulating film having the same composition as that of the second and fourth side wall insulating films. The memory transistor, the high-voltage transistor, and the low-voltage transistor are disposed on the same substrate. A total side wall spacer width of the low-voltage transistor is smaller than that of the high-voltage transistor by a thickness corresponding to the third side wall insulating film.

Abstract: A semiconductor device includes a substrate, a first well of a first conductivity type formed within the substrate, a second well of a second conductivity type formed underneath the first well within the substrate and a third well of the second conductivity type formed horizontally to the first well within the substrate, and including a first region formed to a first depth from a surface of the substrate, and a second region formed to a second depth greater than the first depth from the surface of the substrate and connected to the second well.

Abstract: A method of manufacturing a semiconductor device includes forming a flash memory cell in a first region, forming a first electrode of a capacitor in a second region, forming a first silicon oxide film, a silicon nitride film, and a second silicon oxide film in this order as a second insulating film, removing the silicon nitride film and the second silicon oxide film in a partial region of the first electrode, wet-etching a first insulating film and the second insulating film in the third region, forming a second electrode of the capacitor, and etching and removing the first silicon oxide film in the partial region.

Abstract: A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.

Abstract: Gate electrodes are formed in a high speed transistor forming region, a low leakage transistor forming region, and a medium voltage transistor forming region, respectively. Thereafter, a photoresist film covering the medium voltage transistor forming region is formed. Then, ions of an impurity are implanted into a semiconductor substrate while using the photoresist film and the gate electrodes as a mask, and p-type pocket regions, extension regions, and impurity regions are thereby formed. Subsequently, another photoresist film covering the high speed transistor forming region is formed. Then, ions of an impurity are implanted into the semiconductor substrate while using the other photoresist film and the gate electrodes as a mask, and impurity regions and extension regions are thereby formed.

Abstract: A method of manufacturing a semiconductor device includes oxidizing a surface of a semiconductor substrate to form a first insulating film covering a first area, a second area, and a third area of the semiconductor substrate; removing the portions of the first insulating film lying on the first area and the second area; oxidizing the surface of the semiconductor substrate to form a second insulating film covering the first area and the second area and further oxidizing the third area covered with the first insulating film; and removing the portion of the second insulating film lying on from the second area and the portion of the first insulating film lying on the third area.

Abstract: A method of manufacturing a semiconductor device includes: forming first to third gate electrodes in first to third regions, respectively; forming a first mask pattern covering the second region while exposing the first and third regions; forming p-type source drain extensions and p-type pocket regions by ion implantation using the first mask pattern as a mask; forming n-type source drain extensions by ion implantation using the first mask pattern as a mask; forming a second mask pattern covering the first and third regions while exposing the second region; and forming p-type pocket regions by implanting ions of indium into the silicon substrate with the second mask pattern being used as a mask.

Abstract: Gate electrodes are formed in a high speed transistor forming region, a low leakage transistor forming region, and a medium voltage transistor forming region, respectively. Thereafter, a photoresist film covering the medium voltage transistor forming region is formed. Then, ions of an impurity are implanted into a semiconductor substrate while using the photoresist film and the gate electrodes as a mask, and p-type pocket regions, extension regions, and impurity regions are thereby formed. Subsequently, another photoresist film covering the high speed transistor forming region is formed. Then, ions of an impurity are implanted into the semiconductor substrate while using the other photoresist film and the gate electrodes as a mask, and impurity regions and extension regions are thereby formed.

Abstract: A method of manufacturing a semiconductor device has forming a first conductive film over a semiconductor substrate, etching the first conductive film, forming a plurality of first conductive patterns arranged in a first direction, and forming a side surface on an outside of a conductive pattern positioned at an end among the plurality of first conductive patterns such that the side surface has a first inclination angle smaller than a second inclination angle of a side surface on an inside of the conductive pattern positioned at the end, forming a first insulation film over the plurality of first conductive patterns, and forming a second conductive pattern over the first insulation film.

Abstract: A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.

Abstract: A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.

Abstract: A method of manufacturing a semiconductor device includes: forming first to third gate electrodes in first to third regions, respectively; forming a first mask pattern covering the second region while exposing the first and third regions; forming p-type source drain extensions and p-type pocket regions by ion implantation using the first mask pattern as a mask; forming n-type source drain extensions by ion implantation using the first mask pattern as a mask; forming a second mask pattern covering the first and third regions while exposing the second region; and forming p-type pocket regions by implanting ions of indium into the silicon substrate with the second mask pattern being used as a mask.

Abstract: A method of manufacturing a semiconductor device includes forming a flash memory cell in a first region, forming a first electrode of a capacitor in a second region, forming a first silicon oxide film, a silicon nitride film, and a second silicon oxide film in this order as a second insulating film, removing the silicon nitride film and the second silicon oxide film in a partial region of the first electrode, wet-etching a first insulating film and the second insulating film in the third region, forming a second electrode of the capacitor, and etching and removing the first silicon oxide film in the partial region.

Abstract: A method of manufacturing a semiconductor device includes oxidizing a surface of a semiconductor substrate to form a first insulating film covering a first area, a second area, and a third area of the semiconductor substrate; removing the portions of the first insulating film lying on the first area and the second area; oxidizing the surface of the semiconductor substrate to form a second insulating film covering the first area and the second area and further oxidizing the third area covered with the first insulating film; and removing the portion of the second insulating film lying on from the second area and the portion of the first insulating film lying on the third area.

Abstract: A method for manufacturing a semiconductor device includes forming an insulating film on a semiconductor region of a semiconductor substrate on which a MOS transistor is to be formed and patterning the insulating film; implanting an impurity into the semiconductor region through the patterned insulating film using a step of implanting an impurity into a source/drain region of the MOS transistor, to form, below the insulating film, a resistive layer of a resistance element to be formed in the semiconductor region; and siliciding a surface of the source/drain region of the MOS transistor using the insulating film as a silicidation-preventing film of the resistive layer.

Abstract: A semiconductor device includes a memory transistor including a first side wall insulating film and a second side wall insulating film disposed on the outside; a high-voltage transistor including a third side wall insulating film having the same composition as that of the first side wall insulating film, and a fourth side wall insulating film having the same composition as that of the second side wall insulating film, the fourth side wall insulating film being disposed on the outside; and a low-voltage transistor including a fifth side wall insulating film having the same composition as that of the second and fourth side wall insulating films. The memory transistor, the high-voltage transistor, and the low-voltage transistor are disposed on the same substrate. A total side wall spacer width of the low-voltage transistor is smaller than that of the high-voltage transistor by a thickness corresponding to the third side wall insulating film.

Abstract: According to the present invention, provided is a semiconductor device including: a p-type silicon substrate; a shallow n-well formed in the silicon substrate; a shallow p-well formed beside the shallow n-well in the silicon substrate; and a deep n-well which is formed beside the shallow p-well in the silicon substrate, and which is deeper than the shallow p-well. In addition, a deep p-well, which is deeper than the shallow p-well, is formed between the shallow p-well and the deep n-well in the silicon substrate.