Abstract: The present invention discloses an output circuit, by which it is possible to reduce power consumption while maintaining maximum voltage value to be outputted at high level. In this output circuit, a charge-and-discharge circuit uses a terminal voltage Vc of a capacitor as a trapezoidal wave voltage, and a drive circuit drives an output transistor based on the terminal voltage Vc, and a voltage Vo equal to the terminal voltage Vc is outputted to the load. A voltage detection circuit detects an emitter voltage (Vc+VF) of the transistor and generates an electric current proportional to the terminal voltage Vc. This electric current is turned to a base current of the output transistor via a variable current circuit. Therefore, a base current proportional to the output voltage Vo is supplied to the output transistor.

Abstract: An integrated circuit device includes an output terminal for connection with a terminal of an external load, and first and second power supply terminals for connection with a terminal of an external power supply. A switching element is connected between the output terminal and the first power supply terminal. The switching element, the external load, and the external power supply form a load current flow path. An impedance circuit is connected between the output terminal and the second power supply terminal. An abnormality detection circuit operates for monitoring a voltage at the output terminal, and detecting an abnormal condition on the basis of the monitored voltage. A drive control circuit operates for driving and controlling the switching element.

Abstract: A load actuation circuit is provided which is capable of placing a limit on load current to a load below a predetermined value with high accuracy. In the load actuation circuit, a series circuit comprising a detection transistor and an NPN transistor is connected in parallel with an output transistor for supplying a load current to the load, and a diode is placed between the gates of the output transistor and the detection transistor for producing a voltage drop equal to a voltage drop in the NPN transistor. In addition, a constant-current circuit for supplying a constant current is connected to the gate of the detection transistor, and another transistor for constituting a current mirror circuit together with the NPN transistor is connected to the gate of the output transistor. This circuit arrangement prevents a limit value of the load current from fluctuating due to the non-uniformity of circuit elements or the like, thus achieving high-accuracy load-current limitation.

Abstract: In the high side switch type of electrical load driving circuit, wherein an N channel MOS transistor is provided on the circuit for supplying power to the electrical load, a zener diode is provided between the drain and the source of the MOS transistor to protect the MOS transistor. A load is provided between the gate and the ground to protect the MOS transistor. In this circuit, when a positive high voltage is induced on the side of the electrical load, the zener and a parasitic diode of the MOS transistor flows forward currents which absorb the high voltage noise. When a negative high voltage noise is induced from the side of the electrical load, a breakdown current flows through the zener diode, so that the voltage difference between the drain and source is clamed to a predetermined voltage. Then, the diode turns on the MOS transistor. Thus, the MOS transistor can be surely protected from high voltage noises without increasing the current capacities of elements for the protection circuit.

Abstract: A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.

Abstract: A series circuit including a capacitor and a resistor for detecting variation of the output voltage of dc power supply is further provided. During startup, a charge current corresponding to the rising rate of the output voltage flows through the series circuit. This reduces the base current of the power transistor to suppress the rising rate to suppress overshoot and undershoot. A clamp circuit is provided to the differential amplifier for detecting the error voltage. This prevents the saturation in the differential amplifier or limit the voltage variation amplitude to accelerate the operation of the operational amplifier and suppress undershoot. A delay circuit for disabling to driving circuit for the power transistor for the initial interval may be further provided to suppress the initial rapid rise of the output voltage.

Abstract: A semiconductor device in which a bipolar transistor and a MOS transistor are formed in a common element region, which can prevent a circuit layout pattern from being large due to a wiring. A semiconductor device having an element region formed by the N−-type layer, which is isolated and insulated from the other regions. A P+-type base region, an N−-type emitter region, an N+-type collector region, and a P+-type excess carrier removing region for removing excess carrier in the P+-type base region, are commonly formed in particular one N−-type layer. Thus, a bipolar transistor is defined. Furthermore, a gate oxide film is formed on the surface of the N−-type layer where between the P+-type base region and the P+-type excess carrier removing region. A polysilicon layer is formed on the gate oxide film. Thus, a P+-type MOS transistor is defined by using the P+-type base region as a source and the P+-type excess carrier removing region a drain.

Abstract: A constant voltage circuit robust to the input voltage lowering is disclosed. The invention is applied to a constant voltage circuit fed with an input voltage through first and second power conductors for transferring the input voltage to a load as an output voltage through an output transistor. An inventive constant voltage circuit is provided with a substitute circuit, responsive to a detection of the lowing of the input voltage to a predetermined voltage, for providing a substitute output path that is connected in parallel with the output transistor. Doing this minimize the degree of lowering of the second voltage due to the lowering of said first voltage. The output transistor may be nay of NPN and PNP transistors and P-type and N-type MOS FETs.

Abstract: An exhaust gas recovery method and apparatus comprising: a first process in which volatile organic compound gas in exhaust gas from a exhaust gas discharging source is absorbed into water by a scrubber; a second process in which water including the volatile organic compound, which is obtained in the first process, is frozen and the volatile organic compound herein concentrated such that the water including the volatile organic compound is separated into water including a high concentration of the volatile organic compound, level of concentration being higher than that of the water including the volatile organic compound which is obtained in the first process, and ice; a third process in which cold of the ice obtained in the second process is used; and a fourth process in which the water including a high concentration of the volatile organic compound, which is obtained in the second process, is reused, is provided.

Abstract: A charge pump circuit comprises a plurality of capacitors arranged to charge and discharge for generating a charged-up voltage. An oscillation circuit generates a clock signal to be applied to the plurality of capacitors to alternately charge and discharge these charge-up capacitors. A monitoring circuit detects electrical potentials on at least two of the charge-up capacitors and controls the clock signal. An oscillating condition of the oscillation circuit based on the electrical potentials on the at least two of the charge-up capacitors.

Abstract: A current-measuring circuit is provided which is designed to measure the current flowing through an electric load and a switching transistor. The current-measuring circuit includes a current-measuring device. The current-measuring device includes a current-measuring transistor and a voltage control circuit. The current-measuring transistor is disposed in parallel to the switching transistor and allows the current to flow therethrough that is proportional to the current flowing through the electric load and the switching transistor and that is used to measure the current flowing through the switching transistor and the electric load. The voltage control circuit controls a potential difference across the current-measuring transistor so as to match a potential difference across the switching transistor, thereby achieving the proportion of the current flowing through the current-measuring transistor to the current flowing through the switching transistor and the electric load.

Abstract: An output MOS transistor and a current-detecting MOS transistor are connected commonly at their drains and gates. A gate voltage is fed to the gates of these transistors via signal lines. When the voltage of an output terminal is increased in response to excessive load current, a current-mirror circuit consisting of first and second transistors pulls in current from the signal line to reduce the gate voltage. Thus, the output current of output MOS transistor is limited within a predetermined level. Furthermore, a diode, provided in the signal line, produces a voltage drop equivalent to the base-emitter voltage of first transistor. By the function of this diode, the gate-source voltage of output MOS transistor is equalized with the gate-source voltage of current-detecting MOS transistor. As a result, the same operating point can be set for the output transistor and the current-detecting transistor.

Abstract: A first switching element opens or closes a power supply route of an inductive load in accordance with a first driving signal. A clamping element prevents a voltage ot the power supply route from exceeding a first clamp voltage when the power supply route is opened. A second switching element opens or closes the current flow route, provided in parallel with the power supply route, in response to a second driving signal. A rectifying means is responsive to the second switching element to change the clamp voltage to a second clamp voltage when the first switching element is turned off. The second switching element is constituted by a MOSFET. A charging element charges a capacitor of MOSFET.

Abstract: A temperature detecting circuit detects the rise of ambient temperature, using a forward voltage drop across a diode. The temperature detecting circuit comprises a temperature detecting diode whose cathode is grounded, a first constant current supply device connected with the anode of the temperature detecting diode, for supplying a constant current Ia to the temperature-detecting diode, a rectifying diode whose cathode is connected with the anode of the temperature detecting diode, a second constant current supply device connected with the anode of the rectifying diode, for supplying a constant current Ib to the temperature-detecting diode, a comparator, and a transistor. When the voltage at the anode of the temperature-detecting diode is lower than a reference voltage, the comparator produces a high-level signal indicative of overheating.

Abstract: A differential-type data transmitter includes a differential amplifier pair (T1, T2, T4, T6, T8) having a plurality of transistors and receiving a pair of a first input signal and a second input signal. A load (T3, T5, T7) is connected to the differential amplifier pair. A detection circuit (T9, T10, I4, I5, I6, I7) connected to a junction between the differential amplifier pair and the load is operative for detecting whether or not the first and second input signals are outside a common-mode input voltage range with respect to the differential amplifier pair. A first output circuit (T12) connected to the detection circuit is operative for outputting a signal depending on an output signal from the differential amplifier pair. The signal outputted from the first output circuit is set to a given level when the detection circuit detects that the first and second input signals are outside the conmmon-mode input voltage range.

Abstract: In an actuation circuit for a stepping motor, one switching element and its associated coil are connected at one connecting point, while the other switching element and its associated coil are connected at another connecting point. A pair of switching circuits and a pair of rectifying circuits are provided between two connecting points. When one of switching elements is changed from an ON condition to an OFF condition, the voltage difference between two connecting points allows the current to flow in a designated direction through the switching circuit and the rectifying circuit combined, thereby releasing the energy stored in the coils.

Abstract: A processing apparatus comprising a reaction chamber, a workpiece-supporting section located in the reaction chamber for supporting a workpiece, a gas distributor located in the reaction chamber and facing the workpiece-supporting section for distributing reaction gas to a workpiece that is on the supporting surface of the workpiece-supporting section, a gas supply for supplying the reaction gas into the reaction chamber through the gas distributor and at a predetermined pressure, and a drive mechanism for moving the gas distributor back and forth relative to the workpiece-supporting section in a direction that is parallel to the supporting surface of the workpiece-supporting section. The speed of the relative movement can be varied and the reaction gas flow rate can be controlled in accordance with the speed the relative movement or the position of the gas distributor with respect to the workpiece-supporting sector during the relative movement.