Abstract: A power conversion device according to the present invention comprises a semiconductor device and a wiring board. The wiring board has a through-hole, and a portion of an insulating resin and a heat spreader of the semiconductor device are disposed so as to pass through the through-hole and protrude to the other side of the wiring board. The semiconductor device has a flange section. A gap between the inner circumferential surface of the through-hole and the insulating resin of the semiconductor device inside the through-hole and/or a gap between one side of the wiring board and the flange section is filled with a first resin material, and a second resin material covering at least a connection portion between an external terminal and a power wiring layer is coated onto the one side of the wiring board.

Abstract: A power conversion device is provided with: a semiconductor device, two heat spreaders, and an external terminal; a circuit board having a first insulating layer; and a cooler. The circuit board has: a recessed section for the semiconductor device; a first conductor layer that forms a bottom surface of the recessed section; and a second conductor layer that is disposed in a layer different from the first conductor layer and which is exposed in the recessed section. One of the heat spreaders is in contact with the bottom surface of the recessed section and is bonded to the first conductor layer with a first metal bonding material. The external terminal is bonded to the second conductor layer with a second metal bonding material. The cooler is in press contact with the other of the heat spreaders with a second insulating layer different from the first insulating layer interposed therebetween.

Abstract: The semiconductor device includes a first conductor member to which a switching element is connected; a second conductor member to which a switching element is connected; a heat dissipation member arranged to face the first and second conductor members arranged in parallel; and an insulating member having an electrical insulation layer that contains a first intermediate conductor facing the first conductor member, a second intermediate conductor facing the second conductor member, and the first and second intermediate conductors, the insulating member being disposed between the first and second conductor members arranged in parallel and the heat dissipation member, wherein the electrical insulation layer has a first insulation layer where the first intermediate conductor is disposed, a second insulation layer where the second intermediate conductor is disposed, and a third insulation layer interposed between the first insulation layer and the second insulation layer.

Abstract: A method for estimating a partial discharge factor of a power semiconductor module which is capable of automatically estimating a partial discharge factor is provided using time-series data of a quantity of charge discharged during a partial discharge test. The method includes: a measurement step of applying, to the power semiconductor module, a test voltage pattern in which a voltage pattern changes, and measuring a quantity of charge that is due to partial discharge of the power semiconductor module; a feature quantity extraction step of extracting a plurality of feature quantities including at least a first feature quantity that is an average value of a quantity of charge in a first time period and a second feature quantity that is an average value of a quantity of charge in a second time period; and an estimation step of estimating the partial discharge factor based on the plurality of feature quantities.

Abstract: A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Abstract: A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Abstract: Provided is a power semiconductor device including: a circuit body in which a conductor plate and a semiconductor element mounted on the conductor plate are sealed with a sealing resin; a cooler disposed opposite to at least one surface of the circuit body; and an insulating member disposed between the circuit body and the cooler, the insulating member including: an insulating sheet bonded to the cooler; a conductor layer bonded to a surface of the insulating sheet, the surface facing the circuit body; and electrically insulating heat dissipation grease filled between the circuit body and the cooler, and formed covering the insulating sheet and the conductor layer.

Abstract: Provided are a positive electrode terminal and a negative electrode terminal being terminals of a capacitor element; a positive electrode conductor plate connected to the positive electrode terminal; a negative electrode conductor plate connected to the negative electrode terminal; and a power conversion module connected to the two conductor plates. The positive electrode terminal and the negative electrode terminal are formed along an arrangement direction of the capacitor element. The positive electrode conductor plate and the negative electrode conductor plate form a laminated conductor portion in which the positive electrode conductor plate and the negative electrode conductor plate have respective main surfaces disposed, to face the main surface of the capacitor element, and are laminated to each other.

Abstract: Provided are a positive electrode terminal and a negative electrode terminal being terminals of a capacitor element; a positive electrode conductor plate connected to the positive electrode terminal; a negative electrode conductor plate connected to the negative electrode terminal; and a power conversion module connected to the two conductor plates. The positive electrode terminal and the negative electrode terminal are formed along an arrangement direction of the capacitor element. The positive electrode conductor plate and the negative electrode conductor plate form a laminated conductor portion in which the positive electrode conductor plate and the negative electrode conductor plate have respective main surfaces disposed, to face the main surface of the capacitor element, and are laminated to each other.

Abstract: A damper device that suppresses arc discharge between electrodes generated by bubbles in an electro-rheological fluid, includes an inner tube housed in an outer tube forming an outer shell of a damper device. An electrode tube is arranged between the outer tube and the inner tube. An electro-rheological fluid is sealed in the outer tube. The inner tube and the electrode tube constitute a cathode and an anode, respectively, and apply a voltage to the electro-rheological fluid located between the inner tube and the electrode tube. An insulating layer is provided on a surface of the electrode tube on a side facing the inner tube or on a surface of the inner tube on a side facing the electrode tube. When a maximum voltage applied to the electro-rheological fluid is Vmax (V), a thickness t (m) of the insulating layer is set to satisfy Formula (1).

Abstract: Provided is a compact and highly reliable power semiconductor device that prevents partial discharge originating from voids generated by the entering of water vapor from the exterior of the semiconductor device through a sealing resin or voids generated between a main terminal and the sealing resin when the main terminal is heated. The power semiconductor device comprises an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulation material for sealing the semiconductor element. The power semiconductor device further includes a plate-shaped terminal for electrically connecting the semiconductor element and an external equipment, and an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a hardness greater than that of the first insulating material.

Abstract: Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100.

Abstract: A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Abstract: A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 ?m capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 ?m interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

Abstract: An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.

Abstract: A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Abstract: In order to provide a transformer and an electric power converter which are less likely to become deteriorated with time and which have stable insulation performance, the transformer according to the present invention is provided with: a core; a bobbin in which a low-voltage-side primary winding and a high-voltage-side secondary winding are disposed along the central magnetic leg of the core; and a bobbin support part that supports the bobbin at an end of the bobbin on the primary winding side, such that an air gap is provided between the central magnetic leg of the core and a surface of the bobbin corresponding to the secondary winding.

Abstract: An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.

Abstract: In order to provide a transformer and an electric power converter which are less likely to become deteriorated with time and which have stable insulation performance, the transformer according to the present invention is provided with: a core; a bobbin in which a low-voltage-side primary winding and a high-voltage-side secondary winding are disposed along the central magnetic leg of the core; and a bobbin support part that supports the bobbin at an end of the bobbin on the primary winding side, such that an air gap is provided between the central magnetic leg of the core and a surface of the bobbin corresponding to the secondary winding.

Abstract: A damper device that suppresses arc discharge between electrodes generated by bubbles in an electro-rheological fluid, includes an inner tube housed in an outer tube forming an outer shell of a damper device. An electrode tube is arranged between the outer tube and the inner tube. An electro-rheological fluid is sealed in the outer tube. The inner tube and the electrode tube constitute a cathode and an anode, respectively, and apply a voltage to the electro-rheological fluid located between the inner tube and the electrode tube. An insulating layer is provided on a surface of the electrode tube on a side facing the inner tube or on a surface of the inner tube on a side facing the electrode tube. When a maximum voltage applied to the electro-rheological fluid is Vmax (V), a thickness t (m) of the insulating layer is set to satisfy Formula (1).