Abstract: Provided are a positive electrode terminal and a negative electrode terminal being terminals of a capacitor element; a positive electrode conductor plate connected to the positive electrode terminal; a negative electrode conductor plate connected to the negative electrode terminal; and a power conversion module connected to the two conductor plates. The positive electrode terminal and the negative electrode terminal are formed along an arrangement direction of the capacitor element. The positive electrode conductor plate and the negative electrode conductor plate form a laminated conductor portion in which the positive electrode conductor plate and the negative electrode conductor plate have respective main surfaces disposed, to face the main surface of the capacitor element, and are laminated to each other.

Abstract: A damper device that suppresses arc discharge between electrodes generated by bubbles in an electro-rheological fluid, includes an inner tube housed in an outer tube forming an outer shell of a damper device. An electrode tube is arranged between the outer tube and the inner tube. An electro-rheological fluid is sealed in the outer tube. The inner tube and the electrode tube constitute a cathode and an anode, respectively, and apply a voltage to the electro-rheological fluid located between the inner tube and the electrode tube. An insulating layer is provided on a surface of the electrode tube on a side facing the inner tube or on a surface of the inner tube on a side facing the electrode tube. When a maximum voltage applied to the electro-rheological fluid is Vmax (V), a thickness t (m) of the insulating layer is set to satisfy Formula (1).

Abstract: Provided is a compact and highly reliable power semiconductor device that prevents partial discharge originating from voids generated by the entering of water vapor from the exterior of the semiconductor device through a sealing resin or voids generated between a main terminal and the sealing resin when the main terminal is heated. The power semiconductor device comprises an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulation material for sealing the semiconductor element. The power semiconductor device further includes a plate-shaped terminal for electrically connecting the semiconductor element and an external equipment, and an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a hardness greater than that of the first insulating material.

Abstract: Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100.

Abstract: A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Abstract: A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 ?m capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 ?m interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

Abstract: An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.

Abstract: A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Abstract: In order to provide a transformer and an electric power converter which are less likely to become deteriorated with time and which have stable insulation performance, the transformer according to the present invention is provided with: a core; a bobbin in which a low-voltage-side primary winding and a high-voltage-side secondary winding are disposed along the central magnetic leg of the core; and a bobbin support part that supports the bobbin at an end of the bobbin on the primary winding side, such that an air gap is provided between the central magnetic leg of the core and a surface of the bobbin corresponding to the secondary winding.

Abstract: An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.

Abstract: In order to provide a transformer and an electric power converter which are less likely to become deteriorated with time and which have stable insulation performance, the transformer according to the present invention is provided with: a core; a bobbin in which a low-voltage-side primary winding and a high-voltage-side secondary winding are disposed along the central magnetic leg of the core; and a bobbin support part that supports the bobbin at an end of the bobbin on the primary winding side, such that an air gap is provided between the central magnetic leg of the core and a surface of the bobbin corresponding to the secondary winding.

Abstract: A damper device that suppresses arc discharge between electrodes generated by bubbles in an electro-rheological fluid, includes an inner tube housed in an outer tube forming an outer shell of a damper device. An electrode tube is arranged between the outer tube and the inner tube. An electro-rheological fluid is sealed in the outer tube. The inner tube and the electrode tube constitute a cathode and an anode, respectively, and apply a voltage to the electro-rheological fluid located between the inner tube and the electrode tube. An insulating layer is provided on a surface of the electrode tube on a side facing the inner tube or on a surface of the inner tube on a side facing the electrode tube. When a maximum voltage applied to the electro-rheological fluid is Vmax (V), a thickness t (m) of the insulating layer is set to satisfy Formula (1).

Abstract: When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as “a”, and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as “b”, the positional relationship a<b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.

Abstract: When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as “a”, and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as “b”, the positional relationship a<b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.

Abstract: An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property. A power module according to the present invention includes: a conductor plate to which a switching element is connected; a heat radiation plate which is disposed to face the conductor plate; an insulating member which is disposed between the conductor plate and the heat radiation plate; and a conductive intermediate conductor which is disposed in the insulating member in a state of being electrically insulated from the conductor plate and the heat radiation plate, wherein the intermediate conductor has a communication region which communicates between the insulating member disposed on the side of the conductor plate with respect to the intermediate conductor and the insulating member disposed on the side of the heat radiation plate with respect to the intermediate conductor.

Abstract: It is an object of the present invention to provide a power module which can withstand a high voltage with a thin insulating layer.

Abstract: An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property. A power module according to the present invention includes: a conductor plate to which a switching element is connected; a heat radiation plate which is disposed to face the conductor plate; an insulating member which is disposed between the conductor plate and the heat radiation plate; and a conductive intermediate conductor which is disposed in the insulating member in a state of being electrically insulated from the conductor plate and the heat radiation plate, wherein the intermediate conductor has a communication region which communicates between the insulating member disposed on the side of the conductor plate with respect to the intermediate conductor and the insulating member disposed on the side of the heat radiation plate with respect to the intermediate conductor.

Abstract: It is an object of the present invention to provide a power module which can withstand a high voltage with a thin insulating layer.

Abstract: An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layer 700 is provided between a power semiconductor module 302 and a heat dissipation portion 307B. The power semiconductor module 302 includes a resin sealer 348, which covers a circumferential side surface of a conductor plate 315, and a plurality of recesses 348D are provided in the resin sealer 348. The insulation layer 700 is formed of a spray coated film 710, an insulation film 720, and a resin layer 730, and the spray coated film 710 is formed on the surface of the resin sealer 348 including recesses 348D to form a seamless flat surface. The planar size of each of the recesses 348D is greater than the planar size of each flat portion 711, which forms the spray coated film 710.

Abstract: A capacitor device includes: a film capacitor element that has a coiled body in which an insulating layer and an electrification layer are laminated and wound together, and a pair of collector electrodes that are formed upon two opposite end faces of the coiled body; a case that has a capacitor housing portion within which the film capacitor element is received; a pair of inserts having insulation properties, one of which is inserted between one of the pair of collector electrodes and one of inner walls of the capacitor housing portion; and a mass of sealing and insulating material that is charged between the film capacitor element and the one of the inner walls of the capacitor housing portion.