Abstract: A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

Abstract: Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt?0.015)×?r, where a relative permittivity of the insulating member is ?r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

Abstract: The present invention is a power distribution mounting component operable at high voltages. More specifically, the power distribution mounting component includes: an insulating layer; current-carrying first conductor layers sandwiching the insulating layer; and a second conductor layer (thinner than the first conductor layers) interposed between the insulating layer and at least one of the first conductor layers. Each the second conductor layer between the insulating layer and the overlying current-carrying first conductor layer is sufficiently thinner than the first conductor layer and is therefore formed in close adhesion to the insulating layer, thereby increasing the partial discharge inception voltage of the power distribution mounting component and therefore its insulation reliability.

Abstract: An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layer 700 is provided between a power semiconductor module 302 and a heat dissipation portion 307B. The power semiconductor module 302 includes a resin sealer 348, which covers a circumferential side surface of a conductor plate 315, and a plurality of recesses 348D are provided in the resin sealer 348. The insulation layer 700 is formed of a spray coated film 710, an insulation film 720, and a resin layer 730, and the spray coated film 710 is formed on the surface of the resin sealer 348 including recesses 348D to form a seamless flat surface. The planar size of each of the recesses 348D is greater than the planar size of each flat portion 711, which forms the spray coated film 710.

Abstract: A capacitor device includes: a film capacitor element that comprises a coiled body in which an insulating layer and an electrification layer are laminated and wound together, and a pair of collector electrodes that are formed upon two opposite end faces of the coiled body; a case that comprises a capacitor housing portion within which the film capacitor element is received; a pair of inserts having insulation properties, one of which is inserted between one of the pair of collector electrodes and one of inner walls of the capacitor housing portion; and a mass of sealing and insulating material that is charged between the film capacitor element and the one of the inner walls of the capacitor housing portion.

Abstract: A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

Abstract: Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

Abstract: Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt?0.015)×?r, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

Abstract: A totally enclosed motor which includes a rotor disposed inside a housing and a heat of the rotor is transferred to the housing, a stator disposed inside the housing and a heat of the stator is transferred to the housing, and an inner fin which is disposed in the rotor and agitates air inside the housing. The totally enclosed motor is cooled by a forced convection by an outer fan disposed outside the housing, or by a natural convention in the vicinity of an outer surface of the housing, and a shape of the rotor is different between one end side and the other end side of the rotor in an extending direction of a rotary shaft of the rotor.

Abstract: Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

Abstract: The present invention is a power distribution mounting component operable at high voltages. More specifically, the power distribution mounting component includes: an insulating layer; current-carrying first conductor layers sandwiching the insulating layer; and a second conductor layer (thinner than the first conductor layers) interposed between the insulating layer and at least one of the first conductor layers. Each the second conductor layer between the insulating layer and the overlying current-carrying first conductor layer is sufficiently thinner than the first conductor layer and is therefore formed in close adhesion to the insulating layer, thereby increasing the partial discharge inception voltage of the power distribution mounting component and therefore its insulation reliability.

Abstract: An object of the invention is to provide an insulation circuit board with high insulation reliability and a related technology that uses this insulation circuit board. An insulation circuit board (12) according to the invention includes: a metal base plate (1); an insulation layer (2); and a conductive circuit (4) formed on the metal base plate (1), with the insulation layer (2) therebetween, wherein the insulation layer (2) is formed by lamination of a plurality of layers that includes at least: a composite insulation layer (2a) that forms a surface boundary with the conductive circuit (4) and includes an inorganic filler (8) dispersed in an insulation plastic (7); and a simple plastic insulation layer (2b) that includes no inorganic filler (8).

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: A totally enclosed motor which includes a rotor disposed inside a housing and a heat of the rotor is transferred to the housing, a stator disposed inside the housing and a heat of the stator is transferred to the housing, and an inner fin which is disposed in the rotor and agitates air inside the housing. The totally enclosed motor is cooled by a forced convection by an outer fan disposed outside the housing, or by a natural convention in the vicinity of an outer surface of the housing, and a shape of the rotor is different between one end side and the other end side of the rotor in an extending direction of a rotary shaft of the rotor.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: The present invention provides a printed wiring board which has high insulation resistance between wirings and is unlikely to cause failures such as leakages or short circuits, attributable to ion migration even in high temperatures and highly humid environments. The printed wiring board has a circuit comprising a metal conductor on base metal layers created by forming an insulating resin layer 4 on at least one face of an insulating substrate 1 and forming the base metal layers 2 and 5 on the insulating resin layer. In the printed wiring board, at least a part of an upper face of the insulating resin layer existing in spaces 11 between the metal conductors is formed at a position lower than the interface between the base metal layer 5 and the insulating resin layer 4.

Abstract: A semiconductor device is manufactured by adhering a fixing tape to plural leads of a lead frame comprising a copper alloy, mounting a semiconductor chip on a tab of the lead frame, electrically connecting the leads to electrodes a of the semiconductor chip via bonding wires, forming a sealing resin portion that seals the semiconductor chip, the tab, the bonding wires, the leads and the fixing tape, and cutting the lead frame. A binder layer of the fixing tape includes at least % by weight of an amine-curable epoxy resin as its main component, and does not include a phenol resin. The binder layer of the fixing tape further includes no more than % by weight of acrylonitrile butadiene rubber. By using this material for the binder layer of the fixing tape, migration of the copper in the leads is suppressed even when a degradation test with strict environmental degradation conditions is conducted.

Abstract: Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Abstract: At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.