Patents by Inventor Kai-Erik Elers
Kai-Erik Elers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10964534Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: May 14, 2019Date of Patent: March 30, 2021Assignee: ASM InternationalInventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20190267231Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: May 14, 2019Publication date: August 29, 2019Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 10297444Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: November 28, 2017Date of Patent: May 21, 2019Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 10139313Abstract: A capacitive pressure sensor for an internal combustion engine is provided having a housing having a bottom surface, variable capacitor and circuitry. The variable capacitor is formed by a stationary electrode and an elastically bendable electrode. Pressure exerted on the bottom surface acts to bend the elastically bendable electrode. This bending alters the capacitance of the variable capacitor. The circuitry is configured to generate a signal based on the variable capacitance of the variable capacitor. This capacitance is representative of the pressure exerted on the bottom surface.Type: GrantFiled: July 22, 2015Date of Patent: November 27, 2018Assignee: TEKNOLOGIAN TUTKIMUSKESKUS VTT OYInventors: Teuvo Sillanpää, Panu Koppinen, Kai-Erik Elers
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Publication number: 20180130666Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: November 28, 2017Publication date: May 10, 2018Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 9831094Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: July 29, 2015Date of Patent: November 28, 2017Assignee: ASM INTERNATIONAL N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20170023440Abstract: A capacitive pressure sensor for an internal combustion engine is provided having a housing having a bottom surface, variable capacitor and circuitry. The variable capacitor is formed by a stationary electrode and an elastically bendable electrode. Pressure exerted on the bottom surface acts to bend the elastically bendable electrode. This bending alters the capacitance of the variable capacitor. The circuitry is configured to generate a signal based on the variable capacitance of the variable capacitor. This capacitance is representative of the pressure exerted on the bottom surface.Type: ApplicationFiled: July 22, 2015Publication date: January 26, 2017Inventors: Teuvo Sillanpää, Panu Koppinen, Kai-Erik Elers
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Publication number: 20160118262Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: July 29, 2015Publication date: April 28, 2016Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 9217200Abstract: Methods of forming thin films on nanopatterning templates, such as nanoimprint lithography (NIL) templates are provided. In some embodiments, an atomic layer deposition (ALD) type process for modifying the surface of a NIL template comprises alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of two or more reactants.Type: GrantFiled: December 21, 2007Date of Patent: December 22, 2015Assignee: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Kai-Erik Elers
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Patent number: 9127351Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: February 13, 2013Date of Patent: September 8, 2015Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 8993055Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: October 27, 2006Date of Patent: March 31, 2015Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 8809195Abstract: A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.Type: GrantFiled: October 20, 2008Date of Patent: August 19, 2014Assignee: ASM America, Inc.Inventor: Kai-Erik Elers
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Patent number: 8536058Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.Type: GrantFiled: June 3, 2011Date of Patent: September 17, 2013Assignee: ASM International N.V.Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
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Patent number: 8334218Abstract: In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing.Type: GrantFiled: October 2, 2009Date of Patent: December 18, 2012Assignee: ASM America, Inc.Inventors: Sebastian E. Van Nooten, Jan Willem Maes, Steven Marcus, Glen Wilk, Petri Räisänen, Kai-Erik Elers
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Patent number: 8268409Abstract: Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.Type: GrantFiled: October 16, 2007Date of Patent: September 18, 2012Assignee: ASM America, Inc.Inventors: Kai-Erik Elers, Glen Wilk, Steven Marcus
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Publication number: 20120028474Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.Type: ApplicationFiled: June 3, 2011Publication date: February 2, 2012Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
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Publication number: 20110146568Abstract: Methods of forming thin films on nanopatterning templates, such as nanoimprint lithography (NIL) templates are provided. In some embodiments, an atomic layer deposition (ALD) type process for modifying the surface of a NIL template comprises alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of two or more reactants.Type: ApplicationFiled: December 21, 2007Publication date: June 23, 2011Applicant: ASM International N.V.Inventors: Suvi P. Haukka, Kai-Erik Elers
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Patent number: 7955979Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.Type: GrantFiled: February 28, 2008Date of Patent: June 7, 2011Assignee: ASM International N.V.Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
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Patent number: 7749871Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.Type: GrantFiled: November 28, 2005Date of Patent: July 6, 2010Assignee: ASM International N.V.Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
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Patent number: 7727864Abstract: Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the film. In some embodiments, plasma parameters are selected to achieve metal-rich metallic-compound films. The metallic-compound films can be components of gate stacks, such as gate electrodes. Plasma parameters can be selected to achieve a gate stack with a predetermined work function.Type: GrantFiled: November 1, 2006Date of Patent: June 1, 2010Assignee: ASM America, Inc.Inventor: Kai-Erik Elers