Patents by Inventor Kai-Fung Chang

Kai-Fung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11075238
    Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.
    Type: Grant
    Filed: July 28, 2019
    Date of Patent: July 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Hung Cheng, Kai-Fung Chang
  • Patent number: 10981779
    Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: April 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Publication number: 20210043721
    Abstract: In some embodiments, the present disclosure relates to a metal-insulator-metal (MIM) device. The MIM device includes a substrate, and a first and second electrode stacked over the substrate. A dielectric layer is arranged between the first and second electrodes. Further, the MIM device includes a titanium getter layer that is disposed over the substrate and separated from the dielectric layer by the first electrode. The titanium getter layer has a higher getter capacity for hydrogen than the dielectric layer.
    Type: Application
    Filed: August 5, 2019
    Publication date: February 11, 2021
    Inventors: Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Yan-Jie Liao
  • Patent number: 10865100
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a substrate over a micro-electro-mechanical system (MEMS) substrate. The substrate includes a semiconductor via. The method also includes forming a dielectric layer over a top surface of the substrate, and forming a polymer layer over the dielectric layer. The method further includes patterning the polymer layer to form an opening, and the semiconductor via is exposed by the opening. The method includes forming a conductive layer in the opening and over the polymer layer, and forming an under bump metallization (UBM) layer on the conductive layer. The method further includes forming an electrical connector over the UBM layer, wherein the electrical connector is electrically connected to the semiconductor via through the UBM layer.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Patent number: 10861929
    Abstract: An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Baohua Niu, Yi-Chuan Teng, Chi-Yuan Shih
  • Publication number: 20200341192
    Abstract: The present disclosure provides a waveguide structure including an optical component. The optical component includes a plurality of grating coupler teeth over a semiconductive substrate and a plurality of grating coupler openings between adjacent grating coupler teeth, wherein the grating coupler openings are configured to receive a light wave. Each of the grating coupler teeth includes a dielectric stack and an etch stopper embedded in the dielectric stack, wherein the etch stopper has a resistance to a fluorine solution that is higher than that of the dielectric stack. A method of manufacturing a semiconductor device is also provided.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Inventors: KAI-FUNG CHANG, LIEN-YAO TSAI, CHIEN SHIH TSAI, SHIH-CHE HUNG
  • Patent number: 10734429
    Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: August 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Hung Cheng, Kai-Fung Chang
  • Patent number: 10712500
    Abstract: The present disclosure provides a semiconductor device, including a semiconductive substrate, a dielectric stack disposed over the semiconductive substrate to form a wall of a grating coupler opening, and an etch stopper interfacing with two sublayers of the dielectric stack and partially separating the interface of the two sublayers. The etch stopper has a resistance to a fluorine solution that is higher than that of the two sublayers. A method of manufacturing the semiconductor device is also provided.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Chien Shih Tsai, Shih-Che Hung
  • Publication number: 20200124790
    Abstract: The present disclosure provides a semiconductor device, including a semiconductive substrate, a dielectric stack disposed over the semiconductive substrate to form a wall of a grating coupler opening, and an etch stopper interfacing with two sublayers of the dielectric stack and partially separating the interface of the two sublayers. The etch stopper has a resistance to a fluorine solution that is higher than that of the two sublayers. A method of manufacturing the semiconductor device is also provided.
    Type: Application
    Filed: October 17, 2018
    Publication date: April 23, 2020
    Inventors: KAI-FUNG CHANG, LIEN-YAO TSAI, CHIEN SHIH TSAI, SHIH-CHE HUNG
  • Publication number: 20200098969
    Abstract: In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.
    Type: Application
    Filed: May 16, 2019
    Publication date: March 26, 2020
    Inventors: Alexander Kalnitsky, Chun-Ren Cheng, Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yan-Jie Liao
  • Publication number: 20200006469
    Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.
    Type: Application
    Filed: May 13, 2019
    Publication date: January 2, 2020
    Inventors: Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Wen-Chuan Tai, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Anderson Lin, Fu-Chun Huang, Chun-Ren Cheng, Ivan Hua-Shu Wu, Fan Hu, Ching-Hui Lin, Yan-Jie Liao
  • Publication number: 20200006470
    Abstract: An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.
    Type: Application
    Filed: October 18, 2018
    Publication date: January 2, 2020
    Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Baohua NIU, Yi-Chuan TENG, Chi-Yuan SHIH
  • Publication number: 20190355771
    Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.
    Type: Application
    Filed: July 28, 2019
    Publication date: November 21, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Hung Cheng, Kai-Fung Chang
  • Publication number: 20190315620
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a substrate over a micro-electro-mechanical system (MEMS) substrate. The substrate includes a semiconductor via. The method also includes forming a dielectric layer over a top surface of the substrate, and forming a polymer layer over the dielectric layer. The method further includes patterning the polymer layer to form an opening, and the semiconductor via is exposed by the opening. The method includes forming a conductive layer in the opening and over the polymer layer, and forming an under bump metallization (UBM) layer on the conductive layer. The method further includes forming an electrical connector over the UBM layer, wherein the electrical connector is electrically connected to the semiconductor via through the UBM layer.
    Type: Application
    Filed: June 21, 2019
    Publication date: October 17, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Len-Yi LEU
  • Patent number: 10367018
    Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: July 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Hung Cheng, Kai-Fung Chang
  • Patent number: 10343895
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: July 9, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Publication number: 20190140003
    Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.
    Type: Application
    Filed: January 30, 2018
    Publication date: May 9, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Hung Cheng, Kai-Fung Chang
  • Patent number: 10266400
    Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: April 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Publication number: 20190002275
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.
    Type: Application
    Filed: February 14, 2018
    Publication date: January 3, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Len-Yi LEU
  • Patent number: 10150664
    Abstract: A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: December 11, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu