Patents by Inventor Kai-Fung Chang
Kai-Fung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200098969Abstract: In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.Type: ApplicationFiled: May 16, 2019Publication date: March 26, 2020Inventors: Alexander Kalnitsky, Chun-Ren Cheng, Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yan-Jie Liao
-
Publication number: 20200006470Abstract: An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.Type: ApplicationFiled: October 18, 2018Publication date: January 2, 2020Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Baohua NIU, Yi-Chuan TENG, Chi-Yuan SHIH
-
Publication number: 20200006469Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.Type: ApplicationFiled: May 13, 2019Publication date: January 2, 2020Inventors: Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Wen-Chuan Tai, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Anderson Lin, Fu-Chun Huang, Chun-Ren Cheng, Ivan Hua-Shu Wu, Fan Hu, Ching-Hui Lin, Yan-Jie Liao
-
Publication number: 20190355771Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.Type: ApplicationFiled: July 28, 2019Publication date: November 21, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Hung Cheng, Kai-Fung Chang
-
Publication number: 20190315620Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a substrate over a micro-electro-mechanical system (MEMS) substrate. The substrate includes a semiconductor via. The method also includes forming a dielectric layer over a top surface of the substrate, and forming a polymer layer over the dielectric layer. The method further includes patterning the polymer layer to form an opening, and the semiconductor via is exposed by the opening. The method includes forming a conductive layer in the opening and over the polymer layer, and forming an under bump metallization (UBM) layer on the conductive layer. The method further includes forming an electrical connector over the UBM layer, wherein the electrical connector is electrically connected to the semiconductor via through the UBM layer.Type: ApplicationFiled: June 21, 2019Publication date: October 17, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Len-Yi LEU
-
Patent number: 10367018Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.Type: GrantFiled: January 30, 2018Date of Patent: July 30, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Hung Cheng, Kai-Fung Chang
-
Patent number: 10343895Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.Type: GrantFiled: February 14, 2018Date of Patent: July 9, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
-
Publication number: 20190140003Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.Type: ApplicationFiled: January 30, 2018Publication date: May 9, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Hung Cheng, Kai-Fung Chang
-
Patent number: 10266400Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.Type: GrantFiled: September 18, 2017Date of Patent: April 23, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
-
Publication number: 20190002275Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.Type: ApplicationFiled: February 14, 2018Publication date: January 3, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Len-Yi LEU
-
Patent number: 10150664Abstract: A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.Type: GrantFiled: December 15, 2014Date of Patent: December 11, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
-
Publication number: 20180342551Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.Type: ApplicationFiled: August 6, 2018Publication date: November 29, 2018Inventors: Ching-Hung Cheng, Kai-Fung Chang
-
Patent number: 10112822Abstract: A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.Type: GrantFiled: February 16, 2017Date of Patent: October 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
-
Patent number: 10109666Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.Type: GrantFiled: February 24, 2017Date of Patent: October 23, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Hung Cheng, Kai-Fung Chang
-
Publication number: 20180230001Abstract: A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.Type: ApplicationFiled: February 16, 2017Publication date: August 16, 2018Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
-
Publication number: 20180194618Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.Type: ApplicationFiled: March 2, 2018Publication date: July 12, 2018Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
-
Patent number: 9926190Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.Type: GrantFiled: January 21, 2016Date of Patent: March 27, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
-
Patent number: 9868630Abstract: A package structure includes a device chip, a MEMS die, a cap structure, and an eutectic bonding layer. The MEMS die is over the device chip and includes a substrate having a plurality of cavities and a conductive layer covering a bottom surface and sidewalls of each of the cavities. The cap structure is coupled to the MEMS die, and the cap structure includes a base substrate having at least one seal ring located in the cavities and a bonding layer covering a first surface and at least part of sidewalls of the seal ring. The first surface of the seal ring faces the MEMS die. The eutectic bonding layer is located between the conductive layer and the bonding layer in the cavities. In addition, a method of manufacturing the package structure is provided.Type: GrantFiled: August 16, 2016Date of Patent: January 16, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
-
Publication number: 20180002166Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.Type: ApplicationFiled: September 18, 2017Publication date: January 4, 2018Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
-
Publication number: 20170334711Abstract: A package structure includes a device chip, a MEMS die, a cap structure, and an eutectic bonding layer. The MEMS die is over the device chip and includes a substrate having a plurality of cavities and a conductive layer covering a bottom surface and sidewalls of each of the cavities. The cap structure is coupled to the MEMS die, and the cap structure includes a base substrate having at least one seal ring located in the cavities and a bonding layer covering a first surface and at least part of sidewalls of the seal ring. The first surface of the seal ring faces the MEMS die. The eutectic bonding layer is located between the conductive layer and the bonding layer in the cavities. In addition, a method of manufacturing the package structure is provided.Type: ApplicationFiled: August 16, 2016Publication date: November 23, 2017Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai