Abstract: A pad structure with a contact via array for high bond structure is provided. In some embodiments, a semiconductor substrate comprises a pad opening. An interconnect structure is under the semiconductor substrate, and comprises an interlayer dielectric (ILD) layer, a wiring layer, and the contact via array. The wiring layer and the contact via array are in the ILD layer. Further, the contact via array borders the wiring layer and is between the wiring layer and the semiconductor substrate. A pad covers the contact via array in the pad opening, and protrudes into the ILD layer to contact the wiring layer on opposite sides of the contact via array. A method for manufacturing the pad structure, as well as an image sensor with the pad structure, are also provided.

Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. An outgas layer is deposited on a surface of a cap wafer. The cap wafer is bonded to a substrate in a manner that forms a first sealed cavity including a first movable element and a second sealed cavity including a second movable element. The out gas layer is annealed to release gas from the out gas layer into the second sealed cavity and increase a pressure of the second sealed cavity so that the second sealed cavity has a higher pressure than the first sealed cavity after the annealing.

Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.

Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. An outgas layer is deposited on a surface of a cap wafer. The cap wafer is bonded to a substrate in a manner that forms a first sealed cavity including a first movable element and a second sealed cavity including a second movable element. The out gas layer is annealed to release gas from the out gas layer into the second sealed cavity and increase a pressure of the second sealed cavity so that the second sealed cavity has a higher pressure than the first sealed cavity after the annealing.

Abstract: Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.

Abstract: A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.

Abstract: Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.

Abstract: The present disclosure relates to a valproic acid biosensor. In some embodiments, the valproic acid biosensor may comprise a microcantilever, a self-assembly monolayer, and a valproic acid antibody layer. The self-assembly monolayer may immobilize on the microcantilever surface. The valproic acid antibody layer may immobilize on the self-assembly monolayer. The valproic acid antibody layer may be used to bind with valproic acid drug samples. The present disclosure further relates to methods for measuring the concentration of valproic acid drug samples.

Abstract: The present disclosure relates to a valproic acid biosensor. In some embodiments, the valproic acid biosensor may comprise a microcantilever, a self-assembly monolayer, and a valproic acid antibody layer. The self-assembly monolayer may immobilize on the microcantilever surface. The valproic acid antibody layer may immobilize on the self-assembly monolayer. The valproic acid antibody layer may be used to bind with valproic acid drug samples. The present disclosure further relates to methods for measuring the concentration of valproic acid drug samples.