Patents by Inventor Kai Yang

Kai Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250149212
    Abstract: A high-power chip resistor includes a resistance layer, a first thermal conductive layer, an adhesion layer, internal electrodes, a first protection layer and a second thermal conductive layer. The first thermal conductive layer includes first thermal conductors and a first gap between the first thermal conductors. The adhesion layer is disposed between the resistance layer and the first thermal conductive layer to adhere them. The internal electrodes are disposed on two terminals of the resistance layer. The first protection layer covers the resistance layer and portions of upper surfaces of the internal electrodes. The second thermal conductive layer is disposed on the first protection layer and includes two second thermal conductors and a second gap between the second thermal conductors. The second thermal conductors contact other portions of upper surfaces located at two terminals of the internal electrodes and not covered by the first protection layer.
    Type: Application
    Filed: May 6, 2024
    Publication date: May 8, 2025
    Inventors: Shen-Li HSIAO, Chun-Kai YANG, Ren-Hong WANG
  • Publication number: 20250147321
    Abstract: A head mounted display including a first display, a second display, a transmission component, an electrically controlled driver and a manual adjustment component is provided. The transmission component is connected to the first display and the second display. The electrically controlled driver is coupled to the transmission component. The electrically controlled driver drives the transmission component in an electrically controlled mode to adjust a distance between the first display and the second display. The manual adjustment component is detachably coupled to the transmission component. The manual adjustment component is coupled to and drives the transmission component to adjust the distance between the first display and the second display in a manual mode, and the manual adjustment component is separated from the transmission component in the electronic control mode.
    Type: Application
    Filed: April 15, 2024
    Publication date: May 8, 2025
    Applicant: HTC Corporation
    Inventors: Chun-Kai Yang, Ying-Chieh Huang
  • Patent number: 12292568
    Abstract: The invention provides a light spot scanning device, a scanning method thereof, and a medical cosmetology device, belonging to the technical field of medical cosmetology, comprising a laser and a collimating lens and a reflector arranged in sequence along the optical path transmission direction of the laser. The reflector is also connected with a driving member, the laser beam emitted by the laser forms a linear light spot through the collimating lens, and the reflector is driven to continuously rotate according to a preset path through the driving member. A plurality of linear light spots formed by the continuous rotation are sequentially overlapped on the light exiting side of the reflector to form a scanning linear light spot. Each time the reflector rotates, a group of linear light spots is formed. After continuous rotation, multiple groups of sequentially overlapping linear light spots are formed on the light exiting side of the reflector, called scanning linear light spots.
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: May 6, 2025
    Assignee: FOCUSLIGHT TECHNOLOGIES INC.
    Inventors: Lichen Sun, Lili Wang, Hongtao Chong, Xiaobo Liu, Pei Wu, Kai Yang
  • Patent number: 12293918
    Abstract: A method includes providing a substrate of a first conductivity type, the substrate including a first circuit region and a second circuit region; forming a first well region of a second conductivity type in the first circuit region of the substrate; forming a first doped region of the second conductivity type in the first well region; forming a diode in the second circuit region of the substrate; forming a first transistor and a second transistor over the substrate in the first circuit region and the second circuit region, respectively; forming a discharge structure over the substrate to electrically couple the first doped region to the diode; and forming a metallization layer over the discharge structure to electrically couple the first transistor to the second transistor subsequent to the forming of the diode, wherein charges accumulated in the first well region are drained to the substrate through the discharge structure.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: May 6, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yao-Jen Tsai, Keng-Hui Liao, Chih-Kai Yang, Chih-Fu Chang, Chia-Jen Leu, Chin-Yuan Ko
  • Patent number: 12293574
    Abstract: There is provided an obstacle detection method, an electronic device and a storage medium, which relates to the field of computer technologies, and particularly to the fields of autonomous driving technologies, intelligent transportation technologies, Internet of Things technologies, deep learning technologies, or the like. The method for detecting obstacle includes: detecting an obstacle in a vehicle traveling process using plural obstacle detection manners to obtain plural initial detection results of the obstacle, the plural initial detection results corresponding to the plural obstacle detection manners; fusing the plural initial detection results to obtain a fusion result; and obtaining a final detection result of the obstacle based on the fusion result.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: May 6, 2025
    Assignee: APOLLO INTELLIGENT DRIVING TECHNOLOGY (BEIJING) CO., LTD.
    Inventors: Lei Zhang, Kai Yang, Qijuan Yin, Wuzhao Zhang, Xiaoyan Wang
  • Publication number: 20250136051
    Abstract: A wiper blade includes a frame structure, a squeegee and a decorative cover structure. The frame structure includes a main frame, auxiliary frames and sub-frames. The auxiliary frames are rotatably connected two ends of the main frame. The sub-frames are loosely connected to two ends of the auxiliary frame. The sub-frames and the auxiliary frame are formed with inserting holes respectively. The squeegee is connected to each sub-frame. The decorative cover structure includes a main cover, auxiliary covers and sub-covers covering the main frame, the auxiliary frame and the sub-frame, respectively. Each auxiliary cover has an inserting bar protruded therefrom and correspondingly inserted into each inserting hole. Accordingly, no connection is formed between any two of the main cover, auxiliary covers and sub-covers so that the squeegee will not be obstructed or limited by the decorative cover structure when wiping on vehicle glass.
    Type: Application
    Filed: December 1, 2023
    Publication date: May 1, 2025
    Inventors: Che-Wei CHANG, Cheng-Kai YANG, Chuan-Chih CHANG
  • Publication number: 20250132496
    Abstract: An antenna module includes an antenna structure, a grounding plane, and an electromagnetic shielding structure. The antenna structure includes a radiating portion and a feeding portion coupled to each other. The grounding plane is adjacent to the antenna structure in a width direction of the antenna module. The feeding portion is coupled between the radiating portion and the grounding plane. The electromagnetic shielding structure is integrally connected to the grounding plane. In addition, an electronic device including the antenna module is also provided.
    Type: Application
    Filed: October 16, 2024
    Publication date: April 24, 2025
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Liang-Che Chou, Yu-Chun Hsieh, Zhe-Kai Yang, Hou-Lung Lin, Jui-Hung Lai
  • Publication number: 20250127568
    Abstract: A laser hair removal handle has: a water supply block, a hollow metal structural member, and a fast axis collimating lens. A laser is mounted at a transverse edge of the L-shaped water supply block, and the hollow metal structural member is mounted at a vertical edge of the L-shaped water supply block, so that diffuse reflection light formed after a laser irradiates the skin enters a cavity of the hollow metal structural member. Since the hollow metal structural member is made of a metal material, the energy of the diffuse reflection light is effectively absorbed, and the effect of the diffuse reflection light on the emitted laser is reduced. The laser emitted by the laser is collimated by using the fast axis collimating lens. Compared with an optical waveguide in the prior art, energy loss is lowered.
    Type: Application
    Filed: April 13, 2023
    Publication date: April 24, 2025
    Inventors: Yiping Lv, Yiduo Zhao, Yao Wei, Kai Yang, Heng Cao
  • Patent number: 12283630
    Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.
    Type: Grant
    Filed: November 29, 2023
    Date of Patent: April 22, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Ming Lee, I-Wen Wu, Po-Yu Huang, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20250120122
    Abstract: One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. The transistor includes a first source/drain (S/D) feature, a second S/D feature, a channel region interposed between the first and second S/D features, and a gate stack engaging the channel region. The semiconductor device includes a first S/D contact landing on a top surface of the first S/D feature, a second S/D contact landing on a top surface of the second S/D feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first S/D feature. The dielectric plug spans a width equal to or smaller than a width of the first S/D feature.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 10, 2025
    Inventors: Chen-Ming Lee, Shih-Chieh Wu, Po-Yu Huang, I-Wen Wu, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: 12269957
    Abstract: A thermal inkjet ink for industrial printing applications includes a primary solvent that includes at least a short chain alcohol, a tackifier that includes a terpene phenolic resin, one or more cosolvents that include at least an ester or a ketone, and a colorant that includes a pigment, a dye, or a combination thereof. The thermal inkjet ink may optionally include other components including, but not limited to, additional tackifiers or resins, one or more surfactants, a lubricant, and a security taggant.
    Type: Grant
    Filed: November 1, 2021
    Date of Patent: April 8, 2025
    Assignee: WIKOFF COLOR CORPORATION
    Inventors: Lucas Russell Fulle, Kai Yang
  • Patent number: 12266606
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a power rail; a bottom semiconductor layer formed over the dielectric layer; a backside spacer formed along a sidewall of the bottom semiconductor layer; a conductive feature contacting a sidewall of the dielectric layer and a sidewall of the backside spacer; channel semiconductor layers over the bottom semiconductor layer, wherein the channel semiconductor layers are stacked up and separated from each other; a metal gate structure wrapping each of the channel semiconductor layers; and an epitaxial source/drain (S/D) feature contacting a sidewall of each of the channel semiconductor layers, wherein the epitaxial S/D feature contacts the conductive feature, and the conductive feature contacts the power rail.
    Type: Grant
    Filed: July 20, 2023
    Date of Patent: April 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Yu Huang, Chia-Hsien Yao, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: 12266798
    Abstract: A negative electrode plate comprising a substrate, which comprises a current collector and negative electrode active material bonded on the current collector; first lithium bands arranged on a front surface of the substrate; second lithium bands arranged on a back surface of the substrate; the first lithium bands and the second lithium bands are mutually staggered; adjacent ones of the first lithium bands are spaced apart and adjacent ones of the second lithium bands are spaced apart, respectively.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: April 1, 2025
    Assignee: SVOLT ENERGY TECHNOLOGY CO., LTD.
    Inventors: Kai Yang, Jing Liu, Shuaibin Lou, Hongxin Yang
  • Patent number: 12266703
    Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: April 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Che Lin, Po-Yu Huang, I-Wen Wu, Chen-Ming Lee, Chia-Hsien Yao, Chao-Hsun Wang, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20250101470
    Abstract: A method for increasing the production of Erinacine A in liquid fermentation of Hericium erinaceus is provided. Through screening of exogenous factors, methyl violet and/or rotenone are selected as the exogenous factors, which ultimately greatly increases the Erinacine A content in the liquid fermentation of Hericium erinaceus, with important production and application value. The liquid fermentation method has high efficiency and can significantly increase the content of Erinacine A in the liquid fermentation process, breaking through the synthetic barrier and having the characteristics of large increase amplitude and fast effect. Compared with other current research on liquid fermentation of Hericium erinaceus to produce Erinacine A, the method for increasing the liquid fermentation production of Erinacine A from Hericium erinaceus is at the highest level, with important research significance.
    Type: Application
    Filed: September 24, 2024
    Publication date: March 27, 2025
    Applicant: Zhejiang University of Technology
    Inventors: Peilong SUN, Kai YANG, Jian WANG, Bangwei YE, Yongjian CHEN
  • Publication number: 20250107082
    Abstract: A memory device includes a stack structure, a first stop layer, a dielectric layer, at least one separation wall and a conductive plug. The stacked structure is located over a substrate. The stacked structure has an opening exposing a stepped structure of the stacked structure. The first stop layer covers the stepped structure and at least at least one portion of sidewalls of the opening. The dielectric layer fills the opening and covers the first stop layer. The separation wall extends through the dielectric layer and the first stop layer in the opening. The conductive plug extends through the dielectric layer and the first stop layer, and is electrically connected to the stepped structure. The memory device may be a 3D NAND flash memory with high capacity and high performance.
    Type: Application
    Filed: September 26, 2023
    Publication date: March 27, 2025
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Chen-Yu Cheng, Chih-Kai Yang, Shih-Chin Lee, Tzung-Ting Han
  • Publication number: 20250107196
    Abstract: A method according to the present disclosure includes receiving a workpiece that includes a gate structure, a first gate spacer feature, a second gate spacer feature, a gate-top dielectric feature over the gate structure, the first gate spacer feature and the second gate spacer feature, a first source/drain feature over a first source/drain region, a second source/drain feature over a second source/drain region, a first dielectric layer over the first source/drain feature, and a second dielectric layer over the second source/drain feature. The method further includes replacing a top portion of the first dielectric layer with a first hard mask layer, forming a second hard mask layer over the first hard mask layer while the second dielectric layer is exposed, etching the second dielectric layer to form a source/drain contact opening and to expose the second source/drain feature, and forming a source/drain contact over the second source/drain feature.
    Type: Application
    Filed: December 9, 2024
    Publication date: March 27, 2025
    Inventors: Ting Fang, Chia-Hsien Yao, Jui-Ping Lin, Chen-Ming Lee, Chung-Hao Cai, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: 12256988
    Abstract: The present invention provides a semiconductor laser module and a method for application in noninvasive medical treatment. The module comprises a direct-output type semiconductor laser light source and a beam shaping device disposed in the light-exit direction of the direct-output type semiconductor laser light source. The beam shaping device comprises a light reflection component. The light reflection component is configured to enable laser beams outputted by the direct-output type semiconductor laser light source to be uniform. Based on the semiconductor laser module and the method provided in the present invention, the objective of treatment can be achieved by means of extracorporeal irradiation in a case in which no harm is done to a human body, costs are low, and the treatment effect is good.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 25, 2025
    Assignee: Focuslight Technologies Inc.
    Inventors: Mingang Mu, Kai Yang, Qiang Wang, Lei Cai, Jianfei Mu, Xuejie Liang, Xiaorong Xing, Xingsheng Liu
  • Publication number: 20250094887
    Abstract: The present disclosure provides a method for optimizing parameters of a ladder-type carbon trading mechanism based on an improved particle swarm optimization (IPSO) algorithm. The method first obtains information and operating data of a park-level integrated energy system, establishes equipment models and constraints of the park-level integrated energy system, and establishes a ladder-type carbon trading model; then encapsulates a process of optimized low-carbon dispatching of the park-level integrated energy system as a fitness function whose input is parameters of a carbon trading mechanism and output is a carbon emission of the system; and finally, introduces an IPSO algorithm to optimize the fitness function, and outputs optimization result information of the algorithm. The present disclosure verifies effectiveness and rationality of the model and the method that give full play to a role of the ladder-type carbon trading mechanism in the park-level integrated energy system through example analysis.
    Type: Application
    Filed: October 20, 2022
    Publication date: March 20, 2025
    Inventors: Quan Chen, Xuanjun Zong, Sheng Zou, Hongwei Zhou, Tao Peng, Weiliang Wang, Wenjia Zhang, Chen Wu, Qun Zhang, Yuan Shen, Wei Feng, Gaofeng Shen, Min Zhang, Kai Yang, Xinyue Kong
  • Patent number: 12253891
    Abstract: An temperature control method including the following steps: driving an temperature control device to generate air circulation for a first server and a second server; monitoring operation state of the temperature control device, the first server and the second server continuously to establish a first learning model; receiving an temperature control state data of the temperature control device, a first state data of the first server, and a second state data of the second server, wherein the first state data includes a first temperature, and the second state data includes a second temperature; inputting the temperature control state data, the first state data, and the second state data into the first learning model to obtain a first temperature prediction value output by the first learning model; and adjusting the temperature control device according to the first temperature prediction value.
    Type: Grant
    Filed: May 19, 2022
    Date of Patent: March 18, 2025
    Assignees: Inventec (Pudong) Technology Corporation, INVENTEC CORPORATION
    Inventors: Chien-Ming Lee, Kai-Yang Tung