Abstract: An air cooling system for electronic devices includes a body, a thermal conduction component, and a heat dissipation fan. The body has a heat dissipation port and air inlet ports. The air inlet ports are disposed at a first housing part and a second housing part of the body. The first housing part is opposite to the second housing part. The thermal conduction component is disposed in the body and configured to contact a heat source. The heat dissipation fan is disposed in the body. The heat dissipation fan includes a first axial air inlet opening, a second axial air inlet opening, and radial air outlet openings. The first axial air inlet opening corresponds to one of the air inlet ports of the first housing part. The second axial air inlet opening corresponds to one of the air inlet ports of the second housing part.

Abstract: A head-mounted display device assembly and an external adjustment module are provided. The head-mounted display device assembly includes a head-mounted display device and the external adjustment module. The head-mounted display device has a first lens and a second lens corresponding to both eyes, and also has a driven mechanism. The first lens and the second lens are respectively coupled to the driven mechanism. The external adjustment module is used for assembling and electrically connecting to the head-mounted display device, and includes a driving element and a transmission element. In a coupling state, the transmission element is coupled to the driving element and the driven mechanism, and the driving element drives the driven mechanism via the transmission element to adjust a distance between the first lens and the second lens. In a separation state, at least one of the driving element and the driven mechanism is separated from the transmission element.

Abstract: A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a gate structure disposed over a channel region of an active region, a drain feature disposed over a drain region of the active region; a source feature disposed over a source region of the active region, a backside source contact disposed under the source feature, an isolation feature disposed on and in contact with the source feature, a drain contact disposed over and electrically coupled to the drain feature, and a gate contact via disposed over and electrically coupled to the gate structure. A distance between the gate contact via and the drain contact is greater than a distance between the gate contact via and the isolation feature. The exemplary semiconductor structure would have a reduced parasitic capacitance and an enlarged leakage window.

Abstract: A connector assembly for mounting a chip module to a printed circuit board (PCB) includes: a seating mechanism including a socket connector, a metallic seat frame, and a metallic load plate; a back plate; and plural fasteners extending through the seating mechanism, the PCB, and the back plate to fasten the seating mechanism and the back plate on two opposite sides of the PCB, wherein the back plate has a curved inner region and a flat outer region and the fasteners extend through the flat outer region of the back plate.

Abstract: Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes providing a workpiece including a semiconductor fin protruding from a substrate, a first placeholder gate and a second placeholder gate over channel regions of the semiconductor fin, and a source/drain feature disposed between the channel regions. The method also includes removing a portion of the first placeholder gate and a portion of the substrate directly disposed thereunder to form an isolation trench, forming a dielectric feature in the isolation trench, replacing the second placeholder gate with a metal gate stack, selectively recessing the dielectric feature, forming a first capping layer over the metal gate stack and a second capping layer over the recessed dielectric feature, and forming a source/drain contact over and electrically coupled to the source/drain feature.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a method and an apparatus for determining an address mapping relationship, and a storage medium. The method for determining an address mapping relationship includes: obtaining a mapping relationship table between preset addresses and DRAM physical addresses under a preset condition; and analyzing values of bit addresses in the DRAM physical address according to a first preset rule, to determine an attribute of each bit address in the DRAM physical address, where the attribute is used for representing an address field of the DRAM physical address.

Abstract: An immersion cooling system and level control method thereof, comprising: provide a main tank with a first upper/lower level limit and a storage tank with a second upper/lower level limit, the connection site of the main tank is higher than that of the storage tank and the first upper level limit; measure the level of the two tanks; when the level of the main tank is lower than the first lower level limit and the level of the storage tank is higher than the second lower level limit, open a first valve and a pump so that the liquid is input into the main tank; and when the level of the main tank is higher than the first upper level limit and the level of the storage tank is not higher than the second upper level limit, open the second valve to allow liquid to enter the storage tank.

Abstract: A semiconductor structure and a method of forming the same are provided. An exemplary method of forming the semiconductor structure includes receiving a workpiece including a fin structure over a front side of a substrate, recessing a source region of the fin structure to form a source opening, extending the source opening into the substrate to form a plug opening, forming a semiconductor plug in the plug opening, planarizing the substrate to expose the semiconductor plug from a back side of the substrate, performing a first wet etching process to remove a portion of the substrate, performing a pre-amorphous implantation (PAI) process to amorphize a rest portion of the substrate, performing a second wet etching process to remove the amorphized rest portion of the substrate to form a dielectric opening, depositing a dielectric layer in the dielectric opening, and replacing the semiconductor plug with a backside source contact.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes an inter-level dielectric layer. A first contact that includes a fill material is formed that extends through the inter-level dielectric layer. The inter-level dielectric layer is recessed such that the fill material extends above a top surface of the inter-level dielectric layer. An etch-stop layer is formed on the inter-level dielectric layer such that the fill material of the first contact extends into the etch-stop layer. A second contact is formed extending through the etch-stop layer to couple to the first contact. In some such examples, the second contact physically contacts a top surface and a side surface of the first contact.

Abstract: A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure, and an S/D contact structure formed adjacent to the gate structure. The FinFET device structure includes a protection layer formed on the S/D contact structure, and an S/D conductive plug formed over the protection layer. The S/D conductive plug is electrically connected to the S/D contact structure by the protection layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a power rail; a bottom semiconductor layer formed over the dielectric layer; a backside spacer formed along a sidewall of the bottom semiconductor layer; a conductive feature contacting a sidewall of the dielectric layer and a sidewall of the backside spacer; channel semiconductor layers over the bottom semiconductor layer, wherein the channel semiconductor layers are stacked up and separated from each other; a metal gate structure wrapping each of the channel semiconductor layers; and an epitaxial source/drain (S/D) feature contacting a sidewall of each of the channel semiconductor layers, wherein the epitaxial S/D feature contacts the conductive feature, and the conductive feature contacts the power rail.

Abstract: The present disclosure relates to a windshield wiper, having a latch seat (10), an elastic arm (20), a scraper (40) and a blocking member (50). The elastic arm (20) is connected to the latch seat (10) and includes an opening slot (21) formed at one end thereof. The elastic arm (20) includes a top surface (22) and a bottom surface (23). The scraper (40) is attached to the bottom surface (23) of the elastic arm (20). The blocking member (50) includes a substrate (51) attached to the top surface (22) and having a side blocking member (52) penetrating through the opening slot (21) and blocking the scraper (21) along a longitudinal direction of the elastic arm (20). Accordingly, the windshield wiper is facilitated for assembly, and the scraper may be secured effectively.

Abstract: The present disclosure provides methods of treating COVID-19 by administering a pharmaceutical composition providing inhibition of severe acute respiratory syndrome-coronavirus 2 (SARS-CoV-2) main protease (MPro) in a patient. The disclosure also provides other methods as well as pharmaceutical formulations for use in treating COVID-19 patients.

Abstract: A method includes forming a fin protruding from a substrate, forming a gate structure across the fin, forming an epitaxial feature over the fin, depositing a dielectric layer covering the epitaxial feature and over sidewalls of the gate structure, performing an etching process to form a trench, the trench dividing the gate structure into first and second gate segments and extending into a region of the dielectric layer, forming a dielectric feature in the trench, recessing a portion of the dielectric feature located in the region, selectively etching the dielectric layer to expose the epitaxial feature, and depositing a conductive feature in physical contact with the epitaxial feature and directly above the portion of the dielectric feature.

Abstract: The present invention provides a method for OSA (Obstructive Sleep Apnea) severity classification by using recording-based Peripheral Oxygen Saturation Signal. The major feature of the present invention emphasizes on using a recording-based Peripheral Oxygen Saturation Signal (SpO2 signal) as an input, which is different from the deep learning-based prior art of using segment-based signals as an input to a model, and the segment-based signals has only two classification results, i.e. normal or apnea.

Abstract: This disclosure is an end cap assembly structure. The elastic arms are inserted in the guiding shield. The wiper strip is inserted between the elastic arms. The end cap is adapted to sheathe the ends of the guiding shield and the elastic arms, and the wiper strip is exposed from the end cap. The end cap includes a shell, posts and blocks. The posts are disposed in the shell. The blocks are disposed on two sides of the shell. The elastic arms are combined with the guiding shield and the wiper strip, and inserted in the end cap. The posts clamp the clamping slots of the elastic arms, and the blocks snap the snapping holes of the elastic arms.

Abstract: This disclosure provides a sealed type windshield wiper structure (1). The carrying seat (20) is combined on the hooking seat (10). The carrying seat (20) includes a carrying board (21) and a carrying frame (22). The carrying board (21) includes a through slot (210), and the carrying frame (22) includes an accommodating slot (220). The elastic piece (30) is inserted in the through slot (210). The waterproof cover (40) includes a shell (41), an inner space (32) and an outer space (43) The carrying seat (20) is inserted in the inner space (42). The rubber wiper (50) includes a piercing strip (51) and a scraping strip (52). The piercing strip (51) is inserted in the outer space (43), and the scraping strip (52) is exposed from the waterproof cover (40) to configure the sealed type windshield wiper structure (1).

Abstract: Provided are a scintillator screen manufacturing method, a scintillator screen and an image detector. The manufacturing method comprises the following steps: making a crystal column scintillator layer (4) on the predetermined surface of a flexible substrate (1); making a moisture-proof layer on the periphery of the flexible substrate (1) on which the crystal column scintillator layer (4) is formed; making an X-ray absorption layer on the other surface of the moisture-proof layer except the surface for receiving X-rays; and making a protective layer (5) on the outer surface of the X-ray absorbing layer and on the surface of the moisture-proof layer for receiving X-rays.