Abstract: The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

Abstract: The present invention relates to semiconductor devices, and more particularly to a method for forming a CMOS semiconductor device, the method including a first integration anneal sequence for each NFET and a second integration anneal sequence for each PFET of the semiconductor device. The method includes providing a structure having an nFET gate stack and a pFET gate stack patterned on a substrate. A first disposable spacer is formed adjacent the nFET gate stack and a second disposable spacer is formed adjacent the pFET gate stack. A first doped S/D region and a second doped S/D region are then formed in the substrate. The first and second disposable spacers are removed after the first and second doped S/D regions are formed. A first halo implant and a first S/D extension region are formed adjacent the nFET gate stack after the first and second disposable spacers are removed. The structure is annealed using a RTA process.

Abstract: The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

Abstract: The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

Abstract: A machine readable storage media containing executable program instructions which when executed cause a digital processing system to set a plurality of operands and operators. A plurality of texture maps are sent to a processor for texture compositing. Operands are selected for a texture operation. A first logic is used wherein if the circulation of blend stages is equal to a number of blend stages, then a color saturation is performed, and a second logic that if the circulation number of blend stages does not equal the number of blend stages then at least one operand is selected for another texture compositing operation.

Abstract: A machine readable storage media containing executable program instructions which when executed cause a digital processing system to seta plurality of operands and operators. A plurality of texture maps are sent to a processor for texture compositing. Operands are selected for a texture operation. A first logic is used wherein if the circulation of blend stages is equal to a number of blend stages, then a color saturation is performed, and a second logic that if the circulation number of blend stages does not equal the number of blend stages then at least one operand is selected for another texture compositing operation.

Abstract: In particular, the present invention relates to a method and system for improving the efficiency of computational processes and specifically multiply and accumulate (“MAC”) processes such as the DCT (“Discrete Cosine Transform”) and/or IDCT (“Inverse Discrete Cosine Transform”) using a performance optimized method and associated hardware apparatus.

Abstract: A magnetic reading head comprising: a bottom shield; a top shield; an AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic reading heads with GMR device free of electric-pop noise also are disclosed.

Abstract: A method (and resulting structure) of forming a semiconductor device, includes implanting, on a substrate, a dopant and at least one species, annealing the substrate, the at least one species retarding a diffusion of the dopant during the annealing of the substrate.

Abstract: The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.

Abstract: The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

Abstract: An algorithm and hardware structure is described for numerical operations on signals that is reconfigurable to operate in a downsampling or non-downsampling mode. According to one embodiment, a plurality of adders and multipliers are reconfigurable via a switching fabric to operate as a plurality of MAAC ( multiply-add-accumulator) kernels (described in detail below), when operating in a non-downsampling mode and a plurality of MAAC kernels and AMAAC (add-multiply-add-accumulator) kernals (described in detail below), when operating in a downsampling mode.

Abstract: Methods and structure formed for retarding diffusion of a dopant into a channel of a strained Si—SiGe CMOS device are disclosed. The methods form a diffusion retardant region in a substrate including at least one diffusion retardant species such as xenon (Xe), and then form a channel layer over the diffusion retardant region. Each step is conducted prior to formation of a gate on the substrate. As a result, if necessary, the diffusion retardant region can be annealed and cleaned or etched to remove defects in the substrate to reduce external resistance and leakage of devices. The diffusion retardant region positioned under the channel slows down the diffusion of a dopant, e.g., arsenic (As). The invention is also applicable to other substrates.

Abstract: In one embodiment of the invention, source and drain regions are formed as well as source and drain contact regions. Thereafter source and drain extension regions are formed. In another embodiment, elevated source and drain regions are formed as well as source and drain extension regions. Thereafter source and drain contact regions are formed at a temperature up to about 600° C. and an annealing time of up to about one minute.

Abstract: In particular, the present invention relates to a method and system for improving the efficiency of computational processes and specifically multiply and accumulate (“MAC”) processes such as the DCT (“Discrete Cosine Transform”) and/or IDCT (“Inverse Discrete Cosine Transform”) using a performance optimized method and associated hardware apparatus.

Abstract: In particular, the present invention relates to a method and system for improving the efficiency of computational processes and specifically multiply and accumulate (“MAC”) processes such as the DCT (“Discrete Cosine Transform”) and/or IDCT (“Inverse Discrete Cosine Transform”) using a performance optimized method and associated hardware apparatus.

Abstract: A communication is received from a user. A receiving device recognizes a user's voice request through the use of interactive voice response technologies. The user chooses system options, personal options, and/or delivery options. A personalized alert message is recorded by the user and appropriate actions are then taken to store and deliver the alert according to the delivery options set by the user. The system can be used to deliver one or more alerts to one or more parties at one or more date/time combinations.

Abstract: An impact absorber for a vehicle includes an outer body including a cavity having an axis, and an inner body situated partially within the cavity for relative movement into the cavity when the absorber is subjected to an impact. The inner body has at least one lateral protrusion. A number of deformable units are located in the outer body at different positions along the cavity. The deformable units partially protrude into the cavity for successive engagements and deformations, one unit after another unit, along the cavity, by the protrusion of the inner body moving into the outer body, thereby absorbing the energy of an impact in different stages. Each deformable unit includes a rigid ball protruding into the cavity and a deformable plate fixed behind the ball.

Abstract: A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.

Abstract: A method (and resulting structure) of forming a semiconductor device, includes implanting, on a substrate, a dopant and at least one species, annealing the substrate, the at least one species retarding a diffusion of the dopant during the annealing of the substrate.