Abstract: A policy determining or resource allocation method includes obtaining, by a policy control network element and a computing service request from a server. The computing service request includes computing service description information of a target computing service of a terminal device, and the computing service request is used for requesting allocation of computing power resources for the target computing service; and determining, by the policy control network element, a target QoS policy for the target computing service based on the computing service description information. The target QoS policy includes a computing power QoS policy.

Abstract: Provided are a system for business process automation and a method thereof. The system according to some embodiments may include a connect manager configured to register and manage application programming interface (API) information for services, a process execution engine configured to execute a target business process comprising a particular service task, which is a task using a particular service provided by a service module, and a connect broker configured to acquire API information for the particular service, registered through the connect manager, during execution of the target business process in response to a request from the process execution engine, and process the particular service task by sending a request for the particular service to the service module using the acquired API information.

Abstract: An anode active material for a lithium secondary battery includes a core portion, and a shell portion formed outside the core portion. The core portion may be a porous spherical particle including metal particles, the shell portion may include carbon, and a distance between metal particles in the core portion may satisfy the following formula: 0.6×(average value of major diameters of metal particles+average value of minor diameters of metal particles)?(distance between metal particles)?0.85×(average value of major diameters of metal particles+average value of minor diameters of metal particles).

Abstract: In a pixel of a display device, a back gate control voltage is applied to a back gate electrode of a first transistor that operates as a driving transistor in an anode initialization period, and the back gate electrode of the first transistor is connected to an anode of a light emitting element in a light emitting period. A first transfer line is disposed apart from the first transistor in a first direction. A capacitor pattern is disposed apart from the first transistor in a second direction opposite to the first direction. A second transmission line is disposed between the first transistor and the capacitor pattern.

Abstract: Apparatuses and techniques for implementing shareable usage-based disturbance circuitry are described. Shareable usage-based disturbance circuitry includes circuits (e.g., shared circuits) that manage usage-based disturbance across at least two sections of a bank of memory within a die of a memory device. In example implementations, the shareable usage-based disturbance circuitry includes a counter circuit and/or an error-correction-code circuit that is coupled to sense amplifiers associated with two neighboring sections. With the shareable usage-based disturbance circuitry, dies within the memory device can be cheaper to manufacture, can consume less power, and can have a smaller footprint with less complex signal routing compared to other dies with other circuits dedicated to mitigating usage-based disturbance within each section.

Abstract: A semiconductor device includes a gate structure including insulating layers and conductive layers that are alternately stacked, a channel layer located in the gate structure, a silicide layer located in the channel layer, and a memory layer surrounding the channel layer. At least one of the channel layer, the silicide layer, and the memory layer includes a halogen element.

Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

Abstract: The present disclosure comprises: a solid-state circuit breaker, which is arranged between a battery system and a line and includes a semiconductor switch for providing an electrical connection or insulation between the battery system and the line according to the voltage applied to a gate terminal; an interrupter switch for providing a physical connection or separation between the solid-state circuit breaker and the line; and a rack battery management system which controls a gate driver applying the gate voltage, so as to provide insulation between the battery system and the line according to the result of sensing a current flowing between the battery system and the line, and which controls the interrupter switch to physically separate the solid-state circuit breaker from the line.

Abstract: Disclosed are a substrate processing apparatus that allow a chemical liquid to penetrate deeply into a gap between patterns of a substrate. The substrate processing apparatus includes a housing having a processing space defined therein in which a substrate is processed; a substrate support installed in the processing space so as to be rotatable about a rotation axis and configured to support the substrate; a chemical liquid supply disposed on top of the substrate support and configured to spray a chemical liquid toward an upper surface of the substrate supported on the substrate support; and a controller configured to repeatedly apply a first rotation control signal and a second rotation control signal indicating different rotation speeds to the substrate support so as to generate an inertial behavior of the chemical liquid coated on the substrate.

Abstract: A semiconductor device includes: a semiconductor layer including a wire and an electrical element; and a plurality of metal pads on a surface of the semiconductor layer, wherein the plurality of metal pads includes a first metal pad and a second metal pad, wherein the second metal pad is smaller in surface area or diameter on the surface of the semiconductor layer than the first metal pad, and wherein the second metal pad is between a first region of the surface of the semiconductor layer where the first metal pad is and a second region of the surface of the semiconductor layer where a surface metal density is zero (0).

Abstract: Provided are an oxidation-resistant catalyst for fuel cells, a manufacturing method thereof, and a fuel cell including the same. In the case of the catalyst for a fuel cell according to the present disclosure, the fuel cell catalyst according to the present disclosure has oxidation-resistant features of a metal oxide while maintaining the electrical conductivity of a carbon support. Accordingly, catalytic activity of platinum particles, which are the active points in fuel cells, can be improved, and metal oxides can prevent platinum particles from directly interacting with carbon supports, thereby resolving the problem of carbon corrosion at the platinum/carbon interface.

Abstract: Disclosed is a semiconductor device comprising a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns spaced apart from and vertically stacked on each other, a source/drain pattern connected to the semiconductor patterns having a p-type, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate dielectric layer between the gate electrode and the semiconductor patterns and including an inner gate dielectric layer adjacent to the inner electrode and an outer gate dielectric layer that extends from bottom to lateral surfaces of the outer electrode. The outer electrode and the outer gate dielectric layer have an inverted T shape.

Abstract: An embodiment voltage converter includes a DC-DC converter and a controller. The DC-DC converter includes a transformer, a main switch connected to an input terminal and the transformer, and first and second synchronous rectification switches connected to an output terminal and the transformer, and the controller is configured to switch the main switch so that the DC-DC converter adjusts a voltage of the input terminal and outputs the voltage to the output terminal and to complementarily switch the first and second synchronous rectification switches without dead time.

Abstract: A semiconductor package comprises a first redistribution layer including a first conductive pattern; a connection module on an upper surface of the first redistribution layer; a glass core extending around the connection module on the upper surface of the first redistribution layer; a through via extended in the glass core; a second insulating layer on the glass core, wherein a portion of the second insulating layer is in the through via; a second redistribution layer on an upper surface of the glass core, wherein the second redistribution layer includes a via pad; and a first semiconductor chip and a second semiconductor chip space apart from each other on an upper surface of the second redistribution layer, wherein the via pad is in contact with the through via, and wherein the first semiconductor chip and the second semiconductor chip are electrically connected to each other through the connection module.

Abstract: The present disclosure relates to a positive electrode active material for a lithium-sulfur battery, and the positive electrode active material of the present disclosure includes a sulfur-carbon composite, wherein the sulfur-carbon composite includes a porous carbon material and a sulfur-based material disposed on at least a portion of an inside of pores and a surface of the porous carbon material, wherein the sulfur-based material includes at least one of sulfur (S8) or a sulfur compound, and wherein the porous carbon material satisfies one or more of the following conditions: (1) a sum of particle size D10 and particle size D90 is 60 ?m or less; and (2) a broadness factor (BF) satisfying Equation 1 is 7 or less: Broadness factor (BF)=(particle size D90 of the porous carbon material)/(particle size D10 of the porous carbon material)??[Equation 1].

Abstract: A method and a device for uplink transmission and reception in a wireless communication system are disclosed. A method for uplink transmission for beam failure recovery (BFR) according to an embodiment of the present disclosure may comprise the steps of: receiving BFR-related configuration information from a base station; and performing the uplink transmission for BFR to the base station, on the basis that at least one of a first beam failure and a second beam failure is detected by counting a first beam failure instance (BFI) and a second BFI according to the assessment of radio link quality for a first BFR reference signal (RS) set and a second BFR RS set, respectively.

Abstract: A memory device including a page buffer is part of a memory system. The memory device includes first memory cells, each configured to be programmed to have a threshold voltage corresponding to any one of a plurality of program states. The memory device also includes data latches configured to respectively store a plurality of pieces of first logical page data to be stored in the first memory cells. The memory device further includes a pre-sensing latch configured to store data sensed through a pre-verify operation. The pre-sensing latch stores second logical page data to be stored in second memory cells when a main verify operation for a threshold program state, among the plurality of program states, has passed.

Abstract: A memory controller to control a memory module including a plurality of data chips, a first parity chip and a second parity chip, includes a system error correction code (ECC) engine and a processor to control the system ECC engine. The system ECC engine includes an ECC decoder and a memory to store a parity check matrix. The ECC decoder selects one of a plurality of ECC decoding schemes based on decoding status flags and corrects a plurality of symbol errors in a read codeword set from the memory module by performing an ECC decoding on the read codeword set based on the selected decoding scheme and the parity check matrix. The decoding status flags are provided from the plurality of data chips and each of the decoding status flags indicates whether at least one error bit is detected in respective one of the plurality of data chips.

Abstract: Provided is a rechargeable lithium battery including an electrolyte solution including a non-aqueous organic solvent, a lithium salt, and an additive; a positive electrode including a positive electrode active material; and a negative electrode including a negative electrode active material, wherein the additive includes one or more of a compound represented by Chemical Formula 1A and a compound represented by Chemical Formula 1B, the positive electrode active material includes a lithium nickel manganese-based oxide represented by Chemical Formula 2, and a charging upper limit voltage is about 4.4 V to about 4.7 V. Chemical Formula 1A and Chemical Formula 1B are as defined in the specification.

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.