Abstract: A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region formed in the substrate. The semiconductor device further includes an impurity diffusion stop layer formed in a recess of the substrate between the source region and the drain region, wherein the impurity diffusion stop layer covers bottom and sidewalls of the recess. The semiconductor device further includes a channel layer formed over the impurity diffusion stop layer and in the recess, and a gate stack formed over the channel layer. The impurity diffusion stop layer substantially prevents impurities of the substrate and the source and drain regions from diffusing into the channel layer.

Abstract: A platform of a smart security protection integrated system includes a fire extinguishing device, a security notifying device, a communication transmission device, an automatic moving device, and a detecting device. The fire extinguishing device has a fire extinguisher cylinder and a nozzle that is able to target a fire source to spread fire extinguisher agents. The security notifying device is set in the platform and has an infrared night-vision camera for active detection and video recording. The communication transmission device is set in the platform and has a Wi-Fi signal transmitter and a GSM signal transmitter to transmit videos recorded by the security notifying device to relevant emergency personnel. The automatic moving device is set on the exterior of the platform to enable automatic multi-directional movement and automatic obstacle avoidance for the platform.

Abstract: As will be appreciated in more detail herein, the present disclosure provides for FinFET techniques whereby a FinFET channel region has a particular orientation with respect to the crystalline lattice of the semiconductor device to provide enhanced mobility, compared to conventional FinFETs. In particular, the present disclosure provides FinFETs with a channel region whose lattice includes silicon atoms arranged on (551) lattice plane. In this configuration, the sidewalls of the channel region are particularly smooth at the atomic level, which tends to promote higher carrier mobility and higher device performance than previously achievable.

Abstract: A semiconductor structure includes a substrate, a shallow trench isolation (STI) structure embedded in the substrate, a stressor embedded in the substrate, and a conductive plug over and electrically coupled with the stressor. A same-material region is sandwiched by the STI structure and an entire sidewall of the stressor, and the same-material region is a continuous portion of the substrate.

Abstract: A semiconductor structure includes a substrate, a shallow trench isolation (STI) structure embedded in the substrate, a stressor embedded in the substrate, and a conductive plug over and electrically coupled with the stressor. A same-material region is sandwiched by the STI structure and an entire sidewall of the stressor, and the same-material region is a continuous portion of the substrate.

Abstract: A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die.

Abstract: A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

Abstract: A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die.

Abstract: The presented principles describe an apparatus and method of making the same, the apparatus being a semiconductor circuit device, having shallow trench isolation features bounding an active area and a periphery area on a semiconductor substrate to electrically isolate structures in the active area from structures in the periphery area. The shallow trench isolation feature bounding the active area is shallower than the shallow trench isolation feature bounding the periphery area, with the periphery area shallow trench isolation structure being formed through two or more etching steps.

Abstract: A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.

Abstract: An embodiment of the disclosure includes a method of forming a semiconductor structure. A substrate has a region adjacent to a shallow trench isolation (STI) structure in the substrate. A patterned mask layer is formed over the substrate. The patterned mask layer covers the STI structure and a portion of the region, and leaves a remaining portion of the region exposed. A distance between an edge of the remaining portion and an edge of the STI structure is substantially longer than 1 nm. The remaining portion of the region is etched thereby forms a recess in the substrate. A stressor is epitaxially grown in the recess. A conductive plug contacting the stressor is formed.

Abstract: A semiconductor structure includes a substrate, a conductive feature over the substrate, a conductive plug structure contacting a portion of an upper surface of the conductive feature, a first etch stop layer over another portion of the upper surface of the conductive feature, and a second etch stop layer over the first etch stop layer. The first etch stop layer is a doped etch stop layer. The first etch stop layer is to function as an etch stop layer during a predetermined etching process for etching the second etch stop layer.

Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

Abstract: A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die.

Abstract: The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; and modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature.

Abstract: A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.

Abstract: A semiconductor wafer having a plurality of chip die areas arranged on a wafer in an array, each chip die area including a seal ring area with one or more first sets of polygonal structures. The wafer further comprises scribe line areas between the chip die areas, the scribe line areas including one or more second sets of polygonal structures. The presence of proximate polygonal structures between the scribe line and seal ring areas balance stresses between the chip die areas during wafer dicing operation.

Abstract: A semiconductor structure includes a substrate, a conductive feature over the substrate, a conductive plug structure contacting a portion of an upper surface of the conductive feature, a first etch stop layer over another portion of the upper surface of the conductive feature, and a second etch stop layer over the first etch stop layer. The first etch stop layer is a doped etch stop layer. The first etch stop layer is to function as an etch stop layer during a predetermined etching process for etching the second etch stop layer.

Abstract: The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; and modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature.