Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

Abstract: An inverter assembly is disclosed and includes a base, a contact terminal, an output copper busbar and an elastic component. The output copper busbar is disposed on the base. The output copper busbar includes an output portion configured to electrically connect with the contact terminal. The elastic component is disposed on the base and includes an abutting element, an elastic element and an accommodation seat. The accommodation seat is disposed on the base, the abutting element is connected to the accommodation seat through the elastic element along an axial direction. When the base is docked with the contact terminal, the abutting element of the elastic component abuts against the output portion to attach to the contact terminal, and the contact terminal abuts against the abutting element and the elastic element, so that a restoring force provided by the elastic element keeps the output portion abutting against the contact terminal.

Abstract: An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.

Abstract: A method for processing a video with a dynamic video-based super-resolution network and a circuit system are provided. In the method, quality scores used to assess a quality of an input video are calculated based on image features of the input video. A moving average algorithm is performed on the quality scores of multiple frames of the input video for obtaining a moving average score. Two corresponding weight tables are selected according to the moving average score. The two weight tables are used to calculate a blending weight that is applied to a neural network super-resolution algorithm. The blending weight is applied to the neural network super-resolution algorithm, so as to produce an output video.

Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: This application relates to motor control unit technologies, and in particular, to a motor control unit, a powertrain, and a vehicle. The motor control unit includes a three-phase bridge arm, a capacitor module, and a heat dissipation panel group. The capacitor module includes a capacitor housing and a capacitor core package, and the capacitor housing includes a first sub-housing and a second sub-housing. A gap between the first sub-housing and the second sub-housing forms an accommodating cavity in a first direction, and the accommodating cavity is used to accommodate the capacitor core package. The three-phase bridge arm includes a plurality of power modules. The heat dissipation panel group is configured to dissipate heat for the plurality of power modules.

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Abstract: Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.

Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

Abstract: A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.

Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.

Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

Abstract: A quick release socket for an insulated tool has a main body and a socket jacketed on the main body. A polygonal hole is formed at a front end of the main body, a connecting rod protrudes from a rear end, at least a through hole is provided around the main body, and a fastening ring groove is provided around the main body. The through hole is connected to the polygonal hole, so the through hole provides the positioning ball for accommodation. The fastening ring groove has a stopping member inside. The socket has an engaging groove, and the engaging groove is divided by a protruding rib into a first accepting space and a second accepting space. A circular slot is provided at a front end of the inner wall of the socket.

Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

Abstract: A conductive film includes a substrate and a first metal nanowire layer. The first metal nanowire layer is disposed on a first surface of the substrate. The first metal nanowire layer has an anisotropy value larger than or equal to 2.8 and smaller than or equal to 4.0.

Abstract: A conductive film includes a substrate and a first metal nanowire layer. The first metal nanowire layer is disposed on a first surface of the substrate. The first metal nanowire layer has an anisotropy value larger than or equal to 2.8 and smaller than or equal to 4.0.