Patents by Inventor Kang Yu

Kang Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240266980
    Abstract: This application provides an inverter apparatus used in a motor controller, a motor controller, and a vehicle. The inverter apparatus includes a capacitor module, a power module, and a first heat sink. The power module includes a plurality of power transistors, and the plurality of power transistors are arranged in a flat manner in a direction perpendicular to a direction in which the power module and the first heat sink are stacked. The first heat sink is configured to dissipate heat for the power transistors in the power module, so that the power transistors operate in a proper temperature environment. The inverter apparatus provided in this application has a compact structure layout and high integration. This is conducive to implementing a miniaturization embodiment of the motor controller, and reducing difficulty of disassembling and assembling internal parts of the motor controller and costs.
    Type: Application
    Filed: February 1, 2024
    Publication date: August 8, 2024
    Inventors: Kang YU, Weilong ZHANG, Ming SUN
  • Patent number: 12019378
    Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: June 25, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cho-Ying Lin, Tai-Yu Chen, Chieh Hsieh, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 12007694
    Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chun Yen, Chi Yang, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11995797
    Abstract: A super resolution image generating device capable of processing an image flexibly includes a scaling-up circuit, a front-end circuit, a first branch circuit, a second branch circuit, and an arithmetic circuit. The scaling-up circuit scales up the image to generate an enlarged image including N pixel values. The front-end circuit extracts features of the image to generate a front-end feature map. The first branch circuit extracts features of the front-end feature map to generate a first feature map, and scales up the first feature map to generate N first values. The second branch circuit processes the front-end feature map to generate a second feature map, scales up the second feature map to generate N second values, and processes the N second values to generate N processed values. The arithmetic circuit combines the N pixel values, the N first values, and the N processed values to generate a super resolution image.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: May 28, 2024
    Assignee: REALTEK SEMICONDUCTOR CORPORATION
    Inventors: Kang-Yu Liu, Chia-Wei Yu
  • Publication number: 20240155070
    Abstract: A method for processing a video with a dynamic video-based super-resolution network and a circuit system are provided. In the method, quality scores used to assess a quality of an input video are calculated based on image features of the input video. A moving average algorithm is performed on the quality scores of multiple frames of the input video for obtaining a moving average score. Two corresponding weight tables are selected according to the moving average score. The two weight tables are used to calculate a blending weight that is applied to a neural network super-resolution algorithm. The blending weight is applied to the neural network super-resolution algorithm, so as to produce an output video.
    Type: Application
    Filed: November 6, 2023
    Publication date: May 9, 2024
    Inventors: KANG-YU LIU, CHON-HOU SIO, CHIA-WEI YU, HAO-RAN WANG
  • Publication number: 20240142878
    Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.
    Type: Application
    Filed: January 10, 2024
    Publication date: May 2, 2024
    Inventors: Tai-Yu CHEN, Shang-Chieh CHIEN, Sheng-Kang YU, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20240119559
    Abstract: The present disclosure discloses an image enlarging apparatus having deep learning mechanism. A deep learning circuit includes an image downsizing circuit, an image characteristic analyzing circuit, a weighting reallocating circuit and an image upsizing circuit. The image downsizing circuit downsizes an input image to generate a downsized image. The image characteristic analyzing circuit analyzes the downsized image according to image characteristics to generate categorized images. The weighting reallocating circuit performs weighting reallocating on the categorized images according to image weighting parameters corresponding to the image characteristics to generate weighting reallocated images. The image upsizing circuit upsizes the weighting reallocated images to generate adjusted images. A concatenating circuit concatenates the input image and the adjusted images to generate concatenated images.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 11, 2024
    Inventors: CHON-HOU SIO, CHIA-WEI YU, KANG-YU LIU, YEN-YING CHEN
  • Patent number: 11948702
    Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Chung Tu, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240103378
    Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Inventors: Tai-Yu CHEN, Tzu-Jung PAN, Kuan-Hung CHEN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11906902
    Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: February 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Yu Chen, Shang-Chieh Chien, Sheng-Kang Yu, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11867597
    Abstract: A method for making a plasmonic mushroom array includes: forming a plurality of metal nano-islands each having nanometer-range dimensions on a surface of a glass substrate; and subjecting to the glass substrate having the plurality of metal nano-islands formed thereon to reactive ion etching such that the plurality of metal nano-islands are converted to a plurality of mushroom-shaped structures each having a metal cap supported by a pillar made of a material of the glass substrate and each having dimensions smaller than the dimensions of the nano-islands, the plurality of mushroom-shaped structures being arranged in a substantially regular pattern with intervals smaller than average intervals between the nano-islands, thereby forming the plurality of nano-scale mushroom-shaped structures on the glass substrate that can exhibit localized surface plasmon resonance.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: January 9, 2024
    Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
    Inventors: Nikhil Bhalla, Amy Shen Fried, Kang-Yu Chu
  • Publication number: 20240004304
    Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Patent number: 11854846
    Abstract: A system for a semiconductor fabrication facility includes a maintenance tool, a control unit, a first track, a second track, a maintenance crane movably mounted on the first track, a plurality of first sensors disposed on the first track, an OHT vehicle movably mounted on the second track, and a second sensor on the OHT vehicle. The first sensors detect a location of the maintenance crane and generate a first location data to the control unit. The second sensor generates a second location data to the control unit.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Fu-Hsien Li, Sheng-Kang Yu, Chi-Feng Tung, Hsiang Yin Shen, Guancyun Li
  • Patent number: 11852978
    Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tai-Yu Chen, Tzu-Jung Pan, Kuan-Hung Chen, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230413503
    Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.
    Type: Application
    Filed: August 7, 2023
    Publication date: December 21, 2023
    Inventors: Shau-Wei LU, Hao Chang, Kun-Hsi Li, Kuo-Hung Lo, Kang-Yu Hsu, Yao-Chung Hu
  • Publication number: 20230400763
    Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
    Type: Application
    Filed: August 8, 2023
    Publication date: December 14, 2023
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Patent number: 11841625
    Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.
    Type: Grant
    Filed: December 10, 2021
    Date of Patent: December 12, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Han Lin, Chieh Hsieh, Sheng-Kang Yu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen
  • Publication number: 20230384696
    Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Inventors: Tai-Yu Chen, Sheng-Kang YU, Kia Tak Lam, Sagar Deepak Khivsara, Shang-Chieh Chien
  • Patent number: 11832429
    Abstract: A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: November 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shau-Wei Lu, Hao Chang, Kun-Hsi Li, Kuo-Hung Lo, Kang-Yu Hsu, Yao-Chung Hu
  • Publication number: 20230375949
    Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.
    Type: Application
    Filed: May 23, 2022
    Publication date: November 23, 2023
    Inventors: Cho-Ying LIN, Tai-Yu CHEN, Chieh HSIEH, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU